Patents Assigned to National Institute of Standards and Technology, The United States Of America, as Represented by The Secretary Of Commerce
  • Patent number: 9660721
    Abstract: An optical detector for detecting radio frequency (RF) signals, the optical detector comprising a light source and a photodetector, and an electrical circuit comprising a position dependent capacitor and a bias voltage source adapted for providing a bias voltage for biasing the position dependent capacitor, the position dependent capacitor comprising an electrode and a membrane being displaceable in reaction to RF signals incident on the membrane, the membrane being metallized, has a thickness of less than 1 ?m and a quality factor, Qm, of at least 20,000, and the distance between the membrane and the electrode being less than 10 ?m.
    Type: Grant
    Filed: July 11, 2014
    Date of Patent: May 23, 2017
    Assignees: Kobenhavns Universitet, Danmarks Tekniske Universitet, National Institute of Standards and Technology, The United States Of America, as Represented by The Secretary Of Commerce
    Inventors: Eugene Simon Polzik, Albert Schliesser, Silvan Schmid, Anders Sondberg Sorensen, Jacob M. Taylor, Koji Usami, Tolga Bagci, Anders Simonsen, Luis Guillermo Villanueva, Emil Zeuthen, Juergen Appel
  • Patent number: 9548092
    Abstract: A spin transport channel includes a dielectric layer contacting a conductive layer. The dielectric layer includes at least one of a tantalum oxide, hafnium oxide, titanium oxide, and nickel oxide. An intermediate spin layer contacts the dielectric layer. The intermediate spin layer includes at least one of copper and silver. The conductive layer is more electrochemically inert than the intermediate spin layer. A polarizer layer contacts the intermediate spin layer. The polarizer layer includes one of a nickel-iron based material, iron, and cobalt based material. The conductive layer and intermediate layer are disposed on opposite sides of the dielectric layer. The dielectric layer and the polarizer layer are disposed on opposite sides of the intermediate spin layer. The intermediate spin layer is arranged to form a conducting path through the dielectric layer configured to transport a plurality of electrons. Each of the plurality of electrons maintains a polarized electron spin.
    Type: Grant
    Filed: November 30, 2012
    Date of Patent: January 17, 2017
    Assignee: The National Institute of Standards and Technology, The United States of America, as represented by the Secretary of Commerce
    Inventors: Curt Andrew Richter, Hyuk-Jae Jang