Abstract: An object of the invention is to provide a method for the stable production of a high-purity Group II-VI compound semiconductor on an industrial scale, and also a hexagonal crystal of Group II-VI compound semiconductor in which a metal can be doped easily. Another object of the invention is to provide a method of producing a Group II-VI compound semiconductor phosphor. The objects are achieved by a method of producing a Group II-VI compound semiconductor comprising generating a pulsed electrical discharge plasma between metallic electrodes in sulfur to produce a Group II-VI compound semiconductor; a method of producing a Group II-VI compound semiconductor phosphor using a pulsed electrical discharge plasma; and a hexagonal crystal of Group II-VI compound semiconductor composed of a plurality of twin crystals.

Abstract: It is found that blood cytochrome c levels quantified for non-alcoholic steatohepatitis patients are higher than those for healthy persons, and that the quantified blood cytochrome c values correlated with fat deposition rates in hepatocytes. It is possible to test non-alcoholic steatohepatitis by quantifying cytochrome c in serum. A test method and a test kit for the test are provided.

Abstract: The present invention provides a magnesium alloy material excellent in high mechanical characteristics without using special manufacturing facilities or processes and a method for manufacturing the magnesium alloy material. The magnesium alloy material is an Mg—Zn—RE alloy containing Zn as an essential component, at least one of Gd, Tb, and Tm as RE, and the rest including Mg and unavoidable impurities and contains a needle-like precipitate or a board-like precipitate (lengthy precipitate: X-phase=?-phase, ??-phase, and ?1-phase).

Abstract: The present invention provides a magnesium alloy material, having superior mechanical properties without using special production equipment or processes, and a production process thereof. The magnesium alloy material of the present invention composed of an Mg—Zn-RE alloy comprises essential components in the form of 0.5 to 3 atomic percent of Zn and 1 to 5 atomic percent of RE, with the remainder comprising Mg and unavoidable impurities. The Mg—Zn-RE alloy has a lamellar phase formed from a long period stacking ordered structure and ?-Mg in the alloy structure thereof. The long period stacking ordered structure has at least one of a curved portion and a bent portion and has a divided portion in at least a portion thereof. Finely granulated ?-Mg having a mean particle diameter of 2 ?m or less is formed in the divided portion.