Abstract: A semiconductor device manufacturing method includes exciting plasma, applying RF power onto a target substrate to generate substrate bias and performing an ion implantation plural times by applying the RF power in the form of pulses.
Type:
Application
Filed:
February 14, 2013
Publication date:
June 20, 2013
Applicants:
NATIONAL UNIVERSITY CORP TOHOKU UNIVERSITY, TOKYO ELECTRON LIMITED
Inventors:
TOKYO ELECTRON LIMITED, NATIONAL UNIVERSITY CORP TOHOKU UNIVERSITY
Abstract: An organometal material gas is supplied into a low electron temperature and high density plasma excited by microwaves to form a thin film of a compound on a substrate as a film forming object. In this case, the temperature of a supply system for the organometal material gas is controlled by taking advantage of the relationship between the vapor pressure and temperature of the organometal material gas.
Type:
Application
Filed:
May 2, 2008
Publication date:
June 10, 2010
Applicants:
NATIONAL UNIVERSITY CORP TOHOKU UNIVERSITY, ROHM CO., LTD., TOKYO ELECTRON LIMITED, UBE INDUSTRIES, LTD.
Abstract: An interlayer insulation film can be produced by laminating a hydrocarbon layer containing an Si atom and a fluorocarbon layer containing an N atom on each other, wherein the hydrocarbon layer contains an H atom and a C atom at such a ratio that the ratio of the number of C atoms to the number of H atoms (H/C) becomes 0.8 to 1.2. The interlayer insulation film makes it possible to suppress generation of a leak current and the film shrinkage which may be caused by thermal annealing and has a low dielectric constant and is stable.
Type:
Application
Filed:
February 22, 2008
Publication date:
April 29, 2010
Applicants:
NATIONAL UNIVERSITY CORP. TOHOKU UNIVERSITY, TOKYO ELECTRON LIMITED, ZEON CORPORATION
Abstract: When positively charged ions are implanted into a target substrate, charge-up damage may occur on the target substrate. In order to suppress charge-up caused by secondary electrons emitted from the target substrate when positively charged ions are implanted, a conductive member is installed at a position facing the target substrate and electrically grounded with respect to a high frequency. Further, a field intensity generated in the target substrate may be reduced by controlling an RF power applied to the target substrate in pulse mode.
Type:
Application
Filed:
December 20, 2007
Publication date:
February 4, 2010
Applicants:
NATIONAL UNIVERSITY CORP TOHOKU UNIVERSITY, TOKYO ELECTRON LIMITED
Abstract: Provided is a shower plate capable of more securely preventing the occurrence of backflow of plasma and enabling efficient plasma excitation. A shower plate 106 is disposed in a processing chamber 102 of a plasma processing apparatus and is provided with a plurality of gas discharge holes 113a for discharging a plasma excitation gas to generate plasma in the processing chamber 102, wherein an aspect ratio of a length of the gas discharge hole to a hole diameter thereof (length/hole diameter) is equal to or greater than about 20. The gas discharge holes 113a are made of ceramics members 113 which are separated from the shower plate 106, and the ceramics members 113 are installed in vertical holes 105 opened in the shower plate 106.
Type:
Application
Filed:
July 18, 2007
Publication date:
December 17, 2009
Applicants:
TOKYO ELECTRON LIMITED, NATIONAL UNIVERSITY CORP. TOHOKU UNIVERSITY