Abstract: An ion sensor is configured such that part of a P well on which part a sensing section is provided is different, in dopant concentration, from the other part of the P well so that electric charges are injected merely to the sensing section in a state where a voltage is applied to an N-type substrate.
Type:
Grant
Filed:
October 16, 2015
Date of Patent:
July 24, 2018
Assignees:
SHARP KABUSHIKI KAISHA, NATIONAL UNIVERSITY CORP TOYOHASHI UNIVERSITY