Abstract: Disclosed is a production apparatus for producing on a substrate a film selected from the group consisting of a metal nitride film, a metal oxide film, a metal carbide film and a film of composite material thereof. The production apparatus comprises a substrate holder for supporting the substrate; a chamber capable retaining a reduced pressure therein; an inert gas supply section that supplies inert gas into the chamber; a source gas supply section that supplies a source gas containing atoms selected from the group consisting of nitrogen atoms, oxygen atoms and carbon atoms into the chamber; a target containing a constituent element of a metal film to be formed on the substrate; a pair of sputtering electrodes for sputtering the target using the inert gas supplied from the gas supply section as a sputtering gas; and a metal catalyst which generates radicals by activating the source gas and which is placed outside a plasma region formed by the pair of sputtering electrodes.