Abstract: A semiconductor chip includes a chip constituent substrate having a first surface and a second surface, and including a layer containing gallium nitride. The chip constituent substrate is provided with a semiconductor element, and components constituting the semiconductor element are located more in an area adjacent to the first surface than in an area adjacent to the second surface. The chip constituent substrate is formed with a through hole penetrating the chip constituent substrate from the first surface to the second surface. The through hole defines a first opening adjacent to the first surface and a second opening adjacent to the second surface, and the first opening is larger than the second opening.

Abstract: A semiconductor nanoparticle includes a core and a shell covering a surface of the core. The shell has a larger bandgap energy than the core and is in heterojunction with the core. The semiconductor nanoparticle emits light when irradiated with light. The core is made of a semiconductor that contains M1, M2, and Z. M1 is at least one element selected from the group consisting of Ag, Cu, and Au. M2 is at least one element selected from the group consisting of Al, Ga, In and Tl. Z is at least one element selected from the group consisting of S, Se, and Te. The shell is made of a semiconductor that consists essentially of a Group 13 element and a Group 16 element.

Abstract: Provided are a hydrogen recycle system and a hydrogen recycle method, whereby hydrogen can be purified to high purity at high yield from a gas, said gas being exhausted from a nitride compound production device, and recycled. The hydrogen recycle system 1 comprises an exhaust gas supply path 11 supplying a gas exhausted from a nitride compound production device 2, a hydrogen recycle means 10 and a hydrogen supply path 12.

Abstract: A fiber-reinforced resin material includes: a first fiber-reinforced resin layer; a second fiber-reinforced resin layer having higher ductility and lower elasticity than those of the first fiber-reinforced resin layer; and a third fiber-reinforced resin layer having higher ductility and lower elasticity than those of the second fiber-reinforced resin layer. The first layer, the second layer, and the third layer are laminated and integrated in this order, wherein the laminate is made of the fiber-reinforced resin material. The manufacturing method includes: stacking a sheet-shaped product obtained by forming continuous fibers into a sheet shape and a resin sheet that serves as a first thermoplastic resin, a second thermoplastic resin, or a third thermoplastic resin so as to obtain a laminated structure in which the first layer, the second layer, and the third layer are laminated in this order; and heating and compressing the obtained stacked product in a stacking direction.

Abstract: The object is to provide an evaluation model that can evaluate how much external force is being applied to a brain organ and/or a cranial bone during an endoscopic endonasal surgery. The object can be achieved by an evaluation model for endoscopic endonasal surgery including: a simulated head part; and a distortion sensor, in which the simulated head part includes a simulated cranium part, the simulated cranium part includes a simulated nasal cavity, and the distortion sensor is arranged in a part of the simulated head part.

Abstract: A gas measurement apparatus includes an optical resonator that resonates light, a light source that generates light for irradiation of the optical resonator, and a photodetector that detects light taken out of the optical resonator. The optical resonator includes a plurality of mirrors, a holding member, a hollow tubular member, a hollow tubular member, and a temperature adjustment instrument. The holding member is lower in thermal expansion coefficient than the hollow tubular member. The hollow tubular member includes a portion higher in thermal conductivity than the holding member and a bellows higher in elasticity than a first portion. The hollow tubular member is equal to or higher than the hollow tubular member in thermal conductivity, and is provided as far as positions of the plurality of mirrors on an inner side of the bellows.

Abstract: In an energy system in a community provided with a plurality of unit grids, each of which is an energy transfer network of a single-unit facility including a power load, the unit grids each include a photovoltaic generator, supply power generated by the photovoltaic generator thereof to the power load thereof, and, as an electric vehicle moves, form a cooperative grid that transfers power stored in a mobile storage battery mounted on the electric vehicle to and from another of the unit grids, and some of the unit grids whose geographical positional relationship is not fixed form a virtual grid for transferring power as a combination of the unit grids that form the cooperative grids changes in accordance with a destination of the electric vehicle.

Abstract: The present invention provides a method for separating pituitary hormone-producing cells and/or progenitor cells thereof, said method comprising a step for separating CD49c-expressing cells from a cell aggregate including adenohypophysis and/or a progenitor tissue thereof, and a hypothalamic neuroepithelial tissue.

Abstract: A gallium oxide film production apparatus includes: a reaction chamber; a substrate disposition portion located in the reaction chamber and configured to dispose a substrate for growing a gallium oxide; a gallium element supply device configured to supply a gallium element to the substrate disposition portion; an oxygen element supply device configured to supply oxygen constituent particles to the substrate disposition portion; and a mixed gas supply device configured to supply a mixed gas containing oxygen and ozone to the oxygen element supply device. The oxygen element supply device includes a plasma generation unit configured to generate plasma from the mixed gas.

Abstract: A low toughness workpiece cutting apparatus, a low toughness workpiece manufacturing method and a low toughness workpiece manufacturing program for predicting an occurrence of defect and/or non-occurrence of defect before a cutting process of low toughness material. A defect prediction device is provided with a storage device, a processor and an interface. The storage device stores tool data that represent physical characteristics and a shape of a tool, cutting data that represent a group of parameters of a cutting process to be performed to a workpiece by use of the tool and material data that represent physical characteristics and a shape of the workpiece. The processor performs an analysis of deformation of the workpiece due to a cutting force and an analysis of fracture due to the deformation, and performs a prediction of an occurrence of defect and/or a non-occurrence of defect of the workpiece due to the cutting process.

Abstract: There is provided a laser processing method for cutting a semiconductor object along a virtual plane facing a surface of the semiconductor object in the semiconductor object. The laser processing method includes a first step of forming a plurality of first modified spots along the virtual plane by causing laser light to enter into the semiconductor object from the surface, and a second step of forming a plurality of second modified spots along the virtual plane so as not to overlap the plurality of first modified spots, by causing laser light to enter into the semiconductor object from the surface.

Abstract: A substrate with a ?-gallium oxide film includes a Si single crystal substrate and a ?-gallium oxide film provided on the Si single crystal substrate. A substrate with a ?-gallium oxide film includes a gallium nitride single crystal substrate and a ?-gallium oxide film provided on the gallium nitride single crystal substrate.

Abstract: A method of producing an ultraviolet laser diode with a low oscillation threshold current density includes stacking a first cladding layer, a light-emitting layer, and a second cladding layer on a substrate in this order to form a nitride semiconductor laminate (step S101), etching at least a portion of the nitride semiconductor laminate to form a mesa structure and setting the ratio between the length of the resonator end faces and the length of the side surfaces of the mesa structure in plan view between 1:5 and 1:500 (step S102), disposing first conductive material on a portion of a first area and applying heat treatment of 400° C. or higher to form a first electrode (step S103), and disposing a second conductive material in an area on the second cladding layer, at a distance of 5 ?m or more from the side surfaces, to form a second electrode (step S104).

Abstract: A structure for cooling a rake face of a cutting insert in a region near a tip of a cutting edge. The cutting insert includes a rake face, a cutting edge formed on an outer periphery of the rake face, a base portion that supports the rake face, and an internal cooling path through which fluid for cooling the rake face flows. The internal cooling path includes an introduction flow path and a cooling flow path, and the cooling flow path is disposed behind a region in which a chip of a workpiece comes into contact with rake face. The cooling flow path is provided at a depth of less than or equal to 1.5 mm from the rake face.

Abstract: The present invention provides a method for efficiently producing a cell aggregate containing pituitary hormone-producing cells from pluripotent stem cells.

Abstract: A nuclear reaction detection device includes an FPGA (Field Programmable Gate Array) 100 which is arranged in an environment in which particle radiation is incident, and includes a user circuit 101 configured to output a value different from that in a normal state, if an SEU (Single Event Upset) occurs in a semiconductor element included in the FPGA, and an SEF detection unit 210 which detects that an abnormal operation (SEF) has occurred in the user circuit based on the output value from the user circuit 101 of the FPGA 100.

Abstract: An interface information identification device of the present disclosure includes: a light source configured to emit light to heat a sample, the sample including a first layer and a second layer overlapping the first layer; an irradiating unit configured to homogenize an intensity distribution of light from the light source to irradiate an entire surface of the first layer of the sample with the light; a detecting unit configured to detect a temperature distribution on a surface of the second layer of the sample; and an identifying unit configured to identify information about an interface between the first layer and the second layer of the sample based on the temperature distribution detected by the detecting unit.

Abstract: The present invention aims to provide a method for efficiently producing a cell population containing pituitary tissue from pluripotent stem cells. The method for producing a cell population containing pituitary tissue includes the following steps (1) and (2): (1) a first step of culturing the pluripotent stem cells in the presence of a c-jun N-terminal kinase (JNK) signal transduction pathway inhibiting substance and a Wnt signal transduction pathway inhibiting substance, (2) a second step of culturing the cell population obtained in the first step in the presence of a BMP signal transduction pathway activating substance and a Sonic hedgehog signal transduction pathway activating substance, thereby obtaining a cell population containing pituitary tissue.

Abstract: Provided is a method for producing a semiconductor nanoparticle including preparing a mixture containing a Ag salt, a salt containing at least one of In and Ga, and an organic solvent; raising the temperature of the mixture to a raised temperature in a range of from 120° C. to 300° C.; and adding a supply source of S to the mixture at the raised temperature in such a manner that a ratio of a number of S atoms to a number of Ag atoms in the mixture increases at a rate of not more than 10/min.

Abstract: Provided is an efficient method for producing semiconductor nanoparticles that exhibit band edge emission. The method comprises performing a first heat treatment of a first mixture, which contains a Cu salt, a Ag salt, a salt containing at least one of In or Ga, a gallium halide, and an organic solvent, to obtain first semiconductor nanoparticles. At least one of the Cu salt, the Ag salt, or the salt containing at least one of In or Ga in the first mixture contains a compound having a bond formed of a metal and sulfur.