Abstract: Provided is a ternary or quaternary semiconductor nanoparticle that enables the band-edge emission and a less toxic composition. A semiconductor nanoparticle is provided that contains Ag, In, and S and has an average particle size of 50 nm or less, wherein the ratio of the number of atoms of Ag to the total number of atoms of Ag and In is 0.320 or more and 0.385 or less, the ratio of the number of atoms of S to the total number of atoms of Ag and In is 1.20 or more and 1.45 or less. The semiconductor nanoparticle is adapted to emit photoluminescence having a photoluminescence lifetime of 200 ns or less upon being irradiated with light having a wavelength in a range of 350 nm to 500 nm.

Abstract: A gas treatment method includes an absorption step in which a gas to be treated containing an acidic compound, such as carbon dioxide, is brought into contact, in an absorber, with a treatment liquid that absorbs the acidic compound; and a regeneration step in which the treatment liquid, having the acidic compound absorbed therein, is sent to a regenerator, and the treatment liquid is then heated to separate the acidic compound from the treatment liquid. In the regeneration step, a gas almost insoluble to the treatment liquid, such as hydrogen gas, is brought into contact with the treatment liquid.

Abstract: An adeno-associated virus (AAV) vector for inserting a desired nucleic acid into a nucleic acid in a cell, wherein the nucleic acid in the cell comprises a region consisting of a first nucleotide sequence and a region consisting of a second nucleotide sequence in order in a direction from a 5? end to a 3? end, wherein the vector comprises a first gRNA target sequence, a region consisting of a first nucleotide sequence, the desired nucleic acid, a region consisting of a second nucleotide sequence, a second gRNA target sequence, a cell-specific promoter, a sequence encoding a Cas9 nuclease, an RNA polymerase III promoter, a sequence encoding a first gRNA recognizing the first gRNA target sequence and a sequence encoding a second gRNA recognizing the second gRNA target sequence, wherein the vector yields a nucleic acid fragment comprising a region consisting of a first nucleotide sequence, the desired nucleic acid and the region consisting of the second nucleotide sequence by the Cas9 nuclease, wherein a first n

Abstract: A structure for cooling a rake face of a cutting insert in a region near a tip of a cutting edge. The cutting insert includes a rake face, a cutting edge formed on an outer periphery of the rake face, a base portion that supports the rake face, and an internal cooling path through which fluid for cooling the rake face flows. The internal cooling path includes an introduction flow path and a cooling flow path, and the cooling flow path is disposed behind a region in which a chip of a workpiece comes into contact with rake face. The cooling flow path is provided at a depth of less than or equal to 1.5 mm from the rake face.

Abstract: Provided is a method for producing a semiconductor nanoparticle including preparing a mixture containing a Ag salt, a salt containing at least one of In and Ga, and an organic solvent; raising the temperature of the mixture to a raised temperature in a range of from 120° C. to 300° C.; and adding a supply source of S to the mixture at the raised temperature in such a manner that a ratio of a number of S atoms to a number of Ag atoms in the mixture increases at a rate of not more than 10/min.

Abstract: There is provided a laser processing method for cutting a semiconductor object along a virtual plane facing a surface of the semiconductor object in the semiconductor object. The laser processing method includes a first step of forming a plurality of first modified spots along the virtual plane by causing laser light to enter into the semiconductor object from the surface, and a second step of forming a plurality of second modified spots along the virtual plane so as not to overlap the plurality of first modified spots, by causing laser light to enter into the semiconductor object from the surface.

Abstract: An object of the present invention is to provide a recombinant phage having high safety and excellent practicality and usefulness. Provided are a recombinant bacteriophage which is deprived of its proliferative capacity and can infect only once due to the fact that a bacteriophage genome in which a part of a virion constituent gene is deleted is stored in a head, and a method for preparing the same. In addition, provided are a recombinant bacteriophage which is deprived of its proliferative capacity and can infect only once due to the fact that a plasmid having a packaging site and encoding a target gene is stored in a head, and a method for preparing the same.

Abstract: There is provided a laser processing method for cutting a semiconductor object along a virtual plane facing a surface of the semiconductor object in the semiconductor object. The laser processing method includes a first step of forming a plurality of first modified spots along the virtual plane to obtain first formation density, by causing laser light to enter into the semiconductor object from the surface, and a second step of forming a plurality of second modified spots along the virtual plane so as to obtain second formation density higher than the first formation density, by causing laser light to enter into the semiconductor object from the surface after the first step.

Abstract: A stacked body comprising: a semiconductor layer comprising a group III-V nitride semiconductor, and an electrode layer, wherein the electrode layer comprises magnesium oxide and zinc oxide, wherein the molar ratio of magnesium based on the sum of magnesium and zinc of the electrode layer [Mg/(Mg+Zn)] is 0.25 or more and 0.75 or less, and conductivity of the electrode layer is 1.0×10?2 S/cm or more.

Abstract: A semiconductor nanoparticle includes a core and a shell covering a surface of the core. The shell has a larger bandgap energy than the core and is in heterojunction with the core. The semiconductor nanoparticle emits light when irradiated with light. The core is made of a semiconductor that contains M1, M2, and Z. M1 is at least one element selected from the group consisting of Ag, Cu, and Au. M2 is at least one element selected from the group consisting of Al, Ga, In and Tl. Z is at least one element selected from the group consisting of S, Se, and Te. The shell is made of a semiconductor that consists essentially of a Group 13 element and a Group 16 element.

Abstract: A light generator including a light source, an optical switch that controls ON/OFF of light from the light source, and a mirror that reflects light from the optical switch and sends the light back to the optical switch. A light generator less in residue in fitting of a ring-down signal, and a radioactive carbon dioxide isotope analysis device and a radioactive carbon dioxide isotope analysis method, by use of the light generator are provided.

Abstract: A carbon isotope analysis method, including the steps of: generating carbon dioxide isotope from carbon isotope; feeding the carbon dioxide isotope into an optical resonator having a pair of mirrors; applying irradiation light having an absorption wavelength of the carbon dioxide isotope into the optical resonator; adjusting a relative positional relationship between the mirrors so that an optical axis of the irradiation light and an optical axis of light generated by the etalon effect are not matched; measuring the intensity of the transmitted light generated by resonance of carbon dioxide isotope excited by the irradiation light; and calculating the concentration of the carbon isotope from the intensity of the transmitted light. An optical resonator that can be suppressed in the parasitic etalon effect, and a carbon isotope analysis device and a carbon isotope analysis method, by use of the optical resonator, are provided.

Abstract: A measurement probe that measures a change in an optical signal caused by electro-optic effect according to an electromagnetic wave, and measures spatial distribution characteristics of the electromagnetic wave, based on differential values detected while the measurement probe and the electromagnetic wave move relative to each other. The measurement probe includes a first measurement device having a sensor structure including an electro-optic crystal that exhibits the electro-optic effect, an optical fiber that is provided on a root side of the electro-optic crystal and transmits the optical signal, and a reflection device that is provided on a tip end side of the electro-optic crystal and reflects the optical signal, and a second measurement device having the sensor structure. In first and second directions perpendicular to a fiber axis direction, a size of the electro-optic crystal is set to one third or less of a wavelength of the target electromagnetic wave.

Abstract: To reduce cost for the method for separating semiconducting carbon nanotube from a mixture of metallic and semiconducting carbon nanotubes. The separation method includes preparing a dispersion by mixing a first substance, a second substance, SDS, SC, and a mixture of metallic and semiconducting carbon nanotubes with a solvent, wherein the dispersion into two layers, which are a first layer mainly containing the first substance and a second layer mainly containing the second substance, whereby the semiconducting carbon nanotube is transferred into the first layer, and the metallic carbon nanotube is transferred into the second layer, wherein the first substance is an ?-glucan which is composed of glucose linked via ?-glucosidic linkage and which has a weight average molecular weight Mw of 4,000 to 7,000 and has a ratio in amount of ?-1, 6 linked glucose residues to the entire glucose residues of 40 to 70%.

Abstract: A method of producing semiconductor nanoparticles is provided. The method includes heating primary semiconductor nanoparticles and a salt of an element M1 in a solvent at a temperature set in a range of 100° C. to 300° C. The primary semiconductor nanoparticles contain the element M1, an element M2, optionally an element M3, and an element Z, and have an average particle size of 50 nm or less. The element M1 is at least one element selected from the group consisting of Ag, Cu, and Au. The element M2 is at least one element selected from the group consisting of Al, Ga, In, and Tl. The element M3 is at least one element selected from the group consisting of Zn and Cd. The element Z is at least one element selected from the group consisting of S, Se, and Te.

Abstract: Semiconductor nanoparticles including Ag, In, Ga, and S are provided. In the semiconductor nanoparticles, a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less. The semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and have an average particle diameter of 10 nm or less.

Abstract: A semiconductor nanoparticle includes a core and a shell covering a surface of the core. The shell has a larger bandgap energy than the core and is in heterojunction with the core. The semiconductor nanoparticle emits light when irradiated with light. The core is made of a semiconductor that contains M1, M2, and Z. M1 is at least one element selected from the group consisting of Ag, Cu, and Au. M2 is at least one element selected from the group consisting of Al, Ga, In and Tl. Z is at least one element selected from the group consisting of S, Se, and Te. The shell is made of a semiconductor that consists essentially of a Group 13 element and a Group 16 element.

Abstract: A waveguide has a first conductor surface facing toward the interior of the waveguide, a second conductor surface facing toward the interior of the waveguide, and a slot extending from the first conductor surface to the outside of the waveguide. The first conductor surface and the second conductor surface electrically communicate with each other and face each other. The first length in the y direction of the first conductor surface in a cross section perpendicular to the z direction is smaller than the second length in the y direction of the second conductor surface in the cross section perpendicular to the z direction. The first length includes the length in the y direction of the slot in the cross section perpendicular to the z direction. The second length is smaller than the distance between the first conductor surface and the second conductor surface in the x direction.

Abstract: A method of producing an ultraviolet laser diode with a low oscillation threshold current density includes stacking a first cladding layer, a light-emitting layer, and a second cladding layer on a substrate in this order to form a nitride semiconductor laminate (step S101), etching at least a portion of the nitride semiconductor laminate to form a mesa structure and setting the ratio between the length of the resonator end faces and the length of the side surfaces of the mesa structure in plan view between 1:5 and 1:500 (step S102), disposing first conductive material on a portion of a first area and applying heat treatment of 400° C. or higher to form a first electrode (step S103), and disposing a second conductive material in an area on the second cladding layer, at a distance of 5 um or more from the side surfaces, to form a second electrode (step S104).

Abstract: An actuator capable of attaining high output. The actuator includes a frame structure part that forms a frame structure surrounding a housing part, and a volume change part housed in the housing part. The volume change part increases a volume thereof by input of external energy. The frame structure part has a higher Young's modulus than a Young's modulus of the volume change part. The housing part has an anisotropic shape, with a maximum width in first direction of the housing part longer than a maximum width in second direction different from the first direction of the housing part.