Patents Assigned to National University of Singapore (NUS)
  • Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET
    Patent number: 7504329
    Abstract: Low work function metals for use as gate electrode in nMOS devices are provided. The low work function metals include alloys of lanthanide(s), metal and semiconductor. In particular, an alloy of nickel-ytterbium (NiYb) is used to fully silicide (FUSI) a silicon gate. The resulting nickel-ytterbium-silicon gate electrode has a work function of about 4.22 eV.
    Type: Grant
    Filed: May 11, 2006
    Date of Patent: March 17, 2009
    Assignees: Interuniversitair Microelektronica Centrum (IMEC), National University of Singapore (NUS), Texas Instruments Incorporated
    Inventors: HongYu Yu, Chen JingDe, Li Mingfu, Dim-Lee Kwong, Serge Biesemans, Jorge Adrian Kittl
  • Method for Modulating the Effective Work Function
    Publication number: 20090050982
    Abstract: A new MOSFET device is described comprising a metal gate electrode, a gate dielectric and an interfacial layer. The interfacial layer comprises a lanthanum hafnium oxide material for modulating the effective work function of the metal gate. The gate dielectric material in contact with the interfacial layer is different that the interfacial layer material. A method for its manufacture is also provided and its applications.
    Type: Application
    Filed: May 29, 2007
    Publication date: February 26, 2009
    Applicants: Interuniversitair Microelektronica Centrum (IMEC), National University of Singapore (NUS), Infineon Technologies AG
    Inventors: Luigi Pantisano, Tom Schram, Stefan De Gendt, Amal Akheyar, XinPeng Wang, Mingfu Li, HongYu Yu