Patents Assigned to Natl. Inst. of Advanced Indust. Science and Tech.
  • SIC SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20130240906
    Abstract: According to one embodiment, an SiC semiconductor device including a p-type 4H—SiC region formed on at least part of a surface portion of an SiC substrate, a first gate insulating film formed on the 4H—SiC region and formed of a 3C—SiC thin film having p-type dopant introduced therein, a second gate insulating film formed on the first gate insulating film, and a gate electrode formed on the second gate insulating film.
    Type: Application
    Filed: March 12, 2013
    Publication date: September 19, 2013
    Applicant: Natl. Inst. of Advanced Indust. Science and Tech.
    Inventors: Tatsuo SHIMIZU, Tetsuo Hatakeyama