Patents Assigned to NaWoTec GmbH
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Patent number: 8316698Abstract: Determining a repairing form of a defect at or close to an edge of a substrate. The defect may be scanned with a scanning probe microscope to determine a three-dimensional contour of the defect. The defect may be scanned with a scanning particle microscope to determine the shape of the at least one edge of the substrate. The repairing form of the defect may be determined from a combination of the three-dimensional contour and the shape of the at least one edge.Type: GrantFiled: December 17, 2009Date of Patent: November 27, 2012Assignee: NaWoTec GmbHInventor: Michael Budach
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Publication number: 20100282596Abstract: The present method relates to processes for the removal of a material from a sample by a gas chemical reaction activated by a charged particle beam. The method is a multiple step process wherein in a first step a gas is supplied which, when a chemical reaction between the gas and the material is activated, forms a non-volatile material component such as a metal salt or a metaloxide. In a second consecutive step the reaction product of the first chemical reaction is removed from the sample.Type: ApplicationFiled: December 18, 2008Publication date: November 11, 2010Applicant: NAWOTEC GMBHInventors: Nicole Auth, Petra Spies, Tristan Bret, Rainer Becker, Thorsten Hofmann, Klaus Edinger
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Patent number: 7537708Abstract: The invention refers to a procedure for etching of materials at the surface by focussed electron beam induced chemical reactions at said surface. The invention is characterized in that in a vacuum atmosphere the material which is to be etched is irradiated with at least one beam of molecules, at least one beam of photons and at least one beam of electrons, whereby the irradiated material and the molecules of the beam of molecules are excited in a way that a chemical reaction predetermined by said material and said molecules composition takes place and forms a reaction product and said reaction product is removed from the material surface-irradiation and removal step.Type: GrantFiled: July 2, 2007Date of Patent: May 26, 2009Assignee: Nawotec GmbHInventors: Hans Wilfried Peter Koops, Klaus Edinger
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Publication number: 20090121132Abstract: A material processing system for processing a work piece is provided. The material processing is effected by supplying a reactive gas and energetic radiation for activation of the reactive gas to a surrounding of a location of the work piece to be processed. The radiation is preferably provided by an electron microscope. An objective lens of the electron microscope is preferably disposed between a detector of the electron microscope and the work piece. A gas supply arrangement of the material processing system comprises a valve disposed spaced apart from the processing location, a gas volume between the valve and a location of emergence of the reaction gas being small. The gas supply arrangement further comprises a temperature-adjusted, especially cooled reservoir for accommodating a starting material for the reactive gas.Type: ApplicationFiled: September 26, 2008Publication date: May 14, 2009Applicants: CARL ZEISS NTS GMBH, NAWOTEC GMBHInventors: Hans W.P. Koops, Peter Hoffrogge
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Patent number: 7452477Abstract: The invention relates to a procedure for etching of materials at the surface by focussed electron beam induced chemical reaction at the surface, with the following steps: a) in a vacuum atmosphere the material which is to be etched is irradiated with at least one beam of molecules and at least one first beam of electrons, whereby the irradiated material and the molecules of the beam of molecules are excited in a way that a chemical reaction takes place and forms a reaction product, which is not gaseous/not volatile—reaction step. The invention is characterized in that b) the reaction product is evaporated from said surface by an second beam of electrons, which heats the material locally to a temperature above the vaporisation temperature of the reaction product —removal step—.Type: GrantFiled: July 28, 2003Date of Patent: November 18, 2008Assignee: NaWoTec GmbHInventors: Hans Wilfried Peter Koops, Klaus Edinger
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Patent number: 7238294Abstract: The invention refers to a procedure for etching of materials at the surface by focussed electron beam induced chemical reactions at said surface. The invention is characterized in that in a vacuum atmosphere the material which is to be etched is irradiated with at least one beam of molecules, at least one beam of photons and at least one beam of electrons, whereby the irradiated material and the molecules of the beam of molecules are excited in a way that a chemical reaction predetermined by said material and said molecules composition takes place and forms a reaction product and said reaction product is removed from the material surface-irradiation and removal step.Type: GrantFiled: May 2, 2003Date of Patent: July 3, 2007Assignees: NaWoTec GmbH, University of MarylandInventors: Hans Wilfried Peter Koops, Klaus Edinger
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Patent number: 7232997Abstract: An apparatus for investigating and/or modifying a sample with charged particles, in particular a scanning electron microscope, is provided. The apparatus comprises a beam (1, 2) of charged particles, a shielding element (10) having an opening (30) for the beam of charged particles to pass through, wherein the opening (30) is sufficiently small and the shielding element (10) sufficiently closely positioned to the surface (20) of the sample to reduce the influence of charge accumulation effects at the surface on the beam of charged particles.Type: GrantFiled: April 14, 2005Date of Patent: June 19, 2007Assignee: NaWoTec GmbHInventors: Klaus Edinger, Josef Sellmair, Thorsten Hofmann
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Publication number: 20060284090Abstract: A material processing system for processing a work piece is provided. The material processing is effected by supplying a reactive gas and energetic radiation for activation of the reactive gas to a surrounding of a location of the work piece to be processed. The radiation is preferably provided by an electron microscope. An objective lens of the electron microscope is preferably disposed between a detector of the electron microscope and the work piece. A gas supply arrangement of the material processing system comprises a valve disposed spaced apart from the processing location, a gas volume between the valve and a location of emergence of the reaction gas being small. The gas supply arrangement further comprises a temperature-adjusted, especially cooled reservoir for accommodating a starting material for the reactive gas.Type: ApplicationFiled: August 7, 2006Publication date: December 21, 2006Applicants: CARL ZEISS NTS GMBH, NAWOTEC GMBHInventors: Hans Koops, Peter Hoffrogge
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Patent number: 6967714Abstract: The matter for which the refractive index is to be determined, is made available in the form of a theoretically determinable scattering or diffraction pattern. Two or more orders of diffraction may then be defined to form at least one intensity ratio. At least one intensity distribution may be formed by irradiating the scattering pattern using one light beam of a defined shape. Subsequently thereto, the intensity ratio may be formed based on the orders of diffraction of the intensity distribution. In addition, at least one portion of a characteristic curve may be determined, which represents the dependency of the intensity ratio on the refractive index, and, with whose assistance, the corresponding refractive index can be assigned to the intensity ratio formed.Type: GrantFiled: March 24, 2001Date of Patent: November 22, 2005Assignee: NaWoTec GmbHInventors: Hans W. P. Koops, Alexander Kaya, Ottokar Leminger
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Patent number: 6909104Abstract: A miniaturized terahertz radiation source based on the Smith-Purcell effect is provided, in which, from a focused electron source, a high-energy bundle of electrons is transmitted at a defined distance over a reflection diffraction grating composed of transversely disposed grating rods, so that, in response to oscillating image charges, electromagnetic waves of one wavelength are emitted, the wavelength being adjustable as a function of the periodicity of the lines and of the electron velocity. The elements of the radiation source, such as field emitter (1), electrostatic lens (4), beam deflector (5), grating (7) of metal, and a second anode (8), are integrated on a semiconductor chip using additive nanolithographic methods. The field electron source is constructed to project, as a wire, out of the surface, using additive nanolithography, and is made of readily conductive material having stabilizing series resistance.Type: GrantFiled: May 10, 2000Date of Patent: June 21, 2005Assignee: NaWoTec GmbHInventors: Hans W. P. Koops, Tobias Bauer, Wolfgang Elsässer, Filip Floreani, Hartmut Roskos
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Patent number: 6903549Abstract: Inordinate localised systems are used at room temperature in a novel device in the form of an electron spectrometer for utilising single-electron electronic applications. Said electron spectrometer device consists of a nanocrystalline metal or a nanocrystalline semiconductor material used as conductor strip connection in the form of an inlet or an outlet for single-electron electronic components and circuits consisting of lithographically produced quantum dots. The resulting single-electron electronic device consisting of quantum dots is supplied with energetically very sharply defined electrons. Said device can thus be operated at room temperature, undisturbed by phonons.Type: GrantFiled: August 8, 2001Date of Patent: June 7, 2005Assignee: NaWoTec GmbHInventors: Hans W. P. Koops, Alexander Kaya
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Publication number: 20050103272Abstract: A material processing system for processing a work piece is provided. The material processing is effected by supplying a reactive gas and energetic radiation for activation of the reactive gas to a surrounding of a location of the work piece to be processed. The radiation is preferably provided by an electron microscope. An objective lens of the electron microscope is preferably disposed between a detector of the electron microscope and the work piece. A gas supply arrangement of the material processing system comprises a valve disposed spaced apart from the processing location, a gas volume between the valve and a location of emergence of the reaction gas being small. The gas supply arrangement further comprises a temperature-adjusted, especially cooled reservoir for accommodating a starting material for the reactive gas.Type: ApplicationFiled: August 24, 2004Publication date: May 19, 2005Applicants: LEO Elektronenmikroskopie GmbH, NAWOTEC GmbHInventors: Hans Koops, Peter Hoffrogge