Abstract: Disclosed is a horizontal-type atomic layer deposition apparatus for large-area substrates, in which a plurality of large-area substrates can be simultaneously subjected to an atomic layer deposition process in a state in which they are stacked in a horizontal position. The apparatus comprises: an outer chamber that is maintained in a vacuum state; an inner chamber provided in the outer chamber; a chamber cover configured to move upward and downward to open and close the bottom of the inner chamber; a cassette configured to move upward and downward with the chamber cover; a process gas injecting portion configured to inject a process gas into a space between a plurality of substrates loaded in the cassette; a gas discharge portion configured to suck and discharge the process gas; and a substrate introducing/discharging means configured to introduce the substrates into the outer chamber and discharge the substrates.

Abstract: Disclosed is an apparatus for batch-type large-area atomic layer deposition, which can perform an atomic layer deposition process on a plurality of large-area glass substrates. The apparatus comprises: a vacuum chamber; gate valves provided at both sides of the vacuum chamber; a process gas supply unit provided in the upper portion of the vacuum chamber and configured to inject laminar-flow process gas downward; a gas discharge unit provided in the lower portion of the vacuum chamber and configured to discharge gas from the vacuum chamber; a cassette configured to load a plurality of substrates and disposed between the process gas supply unit and the gas discharge unit; and an elevating unit provided at the side of the gas discharge unit in the vacuum chamber and configured in the vacuum chamber to elevate the cassette so as to bring the cassette into close contact with the process gas supply unit.