Abstract: A photo-resist mask is ashed after the pattern transfer, and is, thereafter, treated with liquid photo-resist remover, wherein photo-resist remover comprises salt produced through interaction between hydrofluoric acid and a base without metal ion, water, water soluble organic solvent and a derivative of benztriazole expressed by the general formula: 1
Type:
Application
Filed:
March 11, 2002
Publication date:
October 10, 2002
Applicant:
NEC CORPORATION, TOKYO OHKA KOGYO CO., LTD.