Patents Assigned to NEC Electonics Corporation
  • Publication number: 20100245399
    Abstract: Provided is a display device drive circuit capable of setting an optimum drive performance for each output amplifier without increasing the chip size. The display device drive circuit includes: at least two bias lines having different reference potentials; a selector that selects one of the bias lines based on a grayscale signal; and an output amplifier that is supplied with a reference potential of the one of the bias lines selected by the selector, generates a display signal, and supplies the display signal to a data line.
    Type: Application
    Filed: February 4, 2010
    Publication date: September 30, 2010
    Applicant: NEC ELECTONICS CORPORATION
    Inventor: Hitoshi Hiratsuka
  • Publication number: 20070296525
    Abstract: A band pass filter circuit, wherein the band pass filter passes a frequency band between a first cutoff frequency and a second cutoff frequency with respect to an input frequency of an input signal, the band pass filter circuit includes: a first resonant circuit; a second resonant circuit; a third resonant circuit; at least one of a capacitive circuit and an inductive circuit. The first resonant circuit is connected to a signal line in series and sets a first resonant frequency as the first cutoff frequency. The second resonant circuit is connected to the signal line in series and sets a second resonant frequency as the second cutoff frequency. The third resonant circuit is connected to the signal line in parallel at a node where the first and second resonant circuits are connected, and sets a third resonant frequency as a band-pass center frequency between the first and second cutoff frequencies.
    Type: Application
    Filed: June 21, 2007
    Publication date: December 27, 2007
    Applicant: NEC ELECTONICS CORPORATION
    Inventor: Masayuki Kokubo
  • Publication number: 20070035648
    Abstract: A solid-state imaging apparatus includes a plurality of photoelectric conversion devices, a charge transfer device for transferring a signal charge converted by the photoelectric conversion devices, a signal charge detection portion for converting a signal charge transferred by the charge transfer device into a signal voltage, a reset circuit for resetting a potential of the signal charge detection portion, and an amplification portion for amplifying the signal voltage. The amplification portion includes a two-stage source follower, each supplied with power supply voltages different from the power supply voltage to be supplied to the reset circuit. The second stage source follower includes drive transistor, and a current source that changes a current amount according to a fluctuation of the reset potential VRD.
    Type: Application
    Filed: July 21, 2006
    Publication date: February 15, 2007
    Applicant: NEC ELECTONICS CORPORATION
    Inventor: Takao Tsuzuki
  • Publication number: 20060055444
    Abstract: Implementing maintenance of a higher speed with fewest possible additional circuits while suppressing deterioration in characteristics of a clock buffer caused by an offset voltage. In a clock buffer circuit comprising a differential amplifier including a pair of load resistances, a pair of differential stage transistors, a constant current source transistor for supplying an operating current to the differential stage transistors, and a bias circuit for supplying to the constant current source transistor a bias voltage according to the resistance value of the load resistances, the bias circuit generates the bias voltage so controlled that the voltage gain of the clock buffer circuit becomes a predetermined value with respect to a variation of the resistance value of the load resistances.
    Type: Application
    Filed: August 25, 2005
    Publication date: March 16, 2006
    Applicant: NEC Electonics Corporation
    Inventor: Kazuo Ogasawara
  • Publication number: 20040152334
    Abstract: The dielectric constants of SiC and SiCN that are currently the subjects of much investigation are both 4.5 to 5 or so and that of SiOC, 2.8 to 3.0 or so. With further miniaturization of the interconnection size and the spacing of interconnections brought about by the reduction in device size, there have arisen strong demands that dielectric constants should be further reduced.
    Type: Application
    Filed: December 30, 2003
    Publication date: August 5, 2004
    Applicants: NEC Electonics Corporation, NEC Corporation
    Inventors: Koichi Ohto, Tatsuya Usami, Noboru Morita, Kazuhiko Endo