Abstract: A semiconductor device 1 includes: a copper interconnect layer 14 that has an interconnect containing an inductor 141, which is buried in an interconnect trench formed in an insulating layer 21; and copper interconnect layers 11 to 13, which include no inductor and are buried in interconnect trenches formed in other insulating layers 15, 17 and 19, respectively.

Abstract: In a semiconductor package, a wiring board includes an insulating substrate, and a plurality of first electrode terminals formed on a surface thereof. A semiconductor chip includes a semiconductor substrate, and a plurality of second electrode terminals formed on a surface thereof, and is mounted on the wiring board so that the first electrode terminals are bonded to the second electrode terminals, respectively. A sealing layer is formed between the wiring board and the semiconductor chip so that the first electrode terminals and the second electrode terminals are sealed by the sealing layer, and so that the wiring board and the semiconductor chip are adhered to each other. The sealing s layer is derived from a liquid crystal polymer sheet intervened between the wiring board and the semiconductor chip.

Abstract: A method of generating a CRC code to determine a variable field value for equalizing a CRC value, which is calculated based on data including the variable field value of a variable field included in a data field according to a generator polynomial, to a desired CRC value, comprises the steps of establishing a temporary variable field value, reading all corrective values which correspond to a bit number where a bit value of said temporary variable field value is “1”, from a conversion table which stores therein corrective values for indicating a bit to be inverted in the variable field value as “1” corresponding to a predetermined bit number, and exclusive-ORing the read corrective values to calculate a first calculated value, and, determining whether the first calculated value corresponds to the desired CRC value or not.