Abstract: A semiconductor device having a configuration, which provides a prevention from a disconnection occurred by a setback of an interconnect that is caused in a microinterconnect having a linewidth of equal to or smaller than 0.1 ?m connected through a via is provided. An insulating film 204 is formed on a silicon substrate 203, and an M1 interconnect 103 and an M2 interconnect 104 are alternately disposed in this region, and these interconnects are connected through the vias 105. Here, widths of the M1 interconnect 103 and the M2 interconnect 104 are all 70 nm, which is the minimum linewidth. In such structure, the via 105 has a width, which is the same as the minimum linewidth of the M1 interconnect 103 and the M2 interconnect 104, and that the M1 interconnect 103 and the M2 interconnect 104 are commonly connected through a plurality of vias 105.