Abstract: A liquid crystal display device includes a first substrate, a second substrate, and a liquid crystal layer sandwiched between the first and second substrates. The first substrate includes first to N-th 1st retardation plates arranged on the first transparent substrate, and the second substrate includes first to N-th 2nd retardation plates arranged on the second transparent substrate. Assuming that a retardation plate among the first to N-th 1st retardation plates has an optical axis arranged at a first angle relative to a reference direction and a retardation plate among the first to N-th 2nd retardation plates, corresponding to the retardation plate among the first to N-th 1st retardation plates, has an optical axis arranged at a second angle relative to the reference direction, the first and second angles are different from each other by about 90 degrees.

Abstract: An in-plane-switching-mode (IPS) LCD device includes a TFT substrate and a CF substrate sandwiching therebetween an LC layer, and a pair of polarizing films sandwiching therebetween the substrates and the LC layer. Each polarizing film has a polarization layer and a protective layer. An optical compensation layer having a birefringence is disposed between the light-emitting-side polarizing film and to the CF substrate. The optical compensation layer has an in-plane retardation of N1 satisfying the following relationship: 83.050?0.810×D1?N1?228.090?0.74D1 in the range of 0<D1?80 ?m, wherein D1 is the thickness of the protective layer of the light-incident-side polarizing film.

Abstract: A liquid crystal display device capable of improving quality of moving images is provided. Each LED (Light Emitting Diode) block is turned ON according to a response of a liquid crystal corresponding to a light emitting region and the brightest gray level is detected for each of red (R), green (G) and blue (B) of an input video signal in every frame period and an input video signal is converted into a value obtained by being multiplied by an upper limit gray level and then by being divided by the brightest gray level and a gray level voltage corresponding to the converted value is applied to each data electrode and, during a lighting period of LED blocks, each LED block is made to flash at a duty corresponding to a rate of the brightest gray level to the upper limit gray level.

Abstract: A planar light emitting device (PLED) includes: a light guide plate (LGP) having upper/lower surfaces; a light source substrate (LSS) mounted with a point light source parallel with a side end of the LGP; a first chassis covering a back of the LSS and a lower surface of the LGP in parallel; and a second chassis having an emission opening; a light source member in a side surface of the PLED; and a fixing member on the side of the PLED with an inclined portion. The inclined portion of the fixing member is formed so pressing the fixing member moves the LGP toward the LSS, which is fixed between the side end of the LGP and the first chassis. Removing the fixing member forms a gap between the LSS and the side end surface of the LGP or the first chassis, and the LSS can exit the LSS take-out portion.

Abstract: A display portion is divided by scan lines and signal lines into sections where pixels are provided. Contact holes each for connecting common wiring and a common electrode together are not formed for all the pixels, but decimated so as to be arranged in zigzags.

Abstract: A transflective liquid crystal display device includes a liquid crystal film and a polarizing plate on a backlight source side. A transflective liquid crystal display device includes an uniaxially anisotropic film (a quarter wave plate) and a polarizing plate on a visual confirmation side. The liquid crystal film has the nematic hybrid orientation, in which a polymeric liquid crystal substance formed in a liquid state is fixed. The optical axis of the anisotropic film is disposed to be orthogonal or substantially orthogonal to that of the liquid crystal film.

Abstract: A liquid crystal display device of the present invention includes a TFT substrate having a substrate and a display pixel arranged in a matrix form on the substrate, a counter substrate opposed to the TFT substrate and being stuck therewith and a liquid crystal enclosed between the TFT substrate and the counter substrate, the pixel electrode and the first common electrode are arranged so that an electric field along a principal plane of the TFT substrate can be applied to the liquid crystal, a second common electrode for inputting a common electric potential is formed on the counter substrate, the second common electrode is opposed to the first common electrode, and a conduction part for electrically connecting the second common electrode and the first common electrode mutually and transmitting the common electric potential to the first common electrode is formed near each display pixel or near a predetermined display pixel.

Abstract: The liquid crystal display device includes a first substrate, a second substrate arranged in facing relation to the first substrate, and a liquid crystal layer sandwiched between the first and second substrates. The first substrate includes a thin film transistor, a pixel electrode associated with a pixel, a common electrode to which a reference voltage is applied, a data line, a scanning line, and a common electrode line. The second substrate is designed to include no electrodes thereon. The first substrate includes an electric-field shielding layer for preventing an electric field from leaking into pixels in which images are to be displayed, from the scanning line, the electric-field shielding layer being comprised of an electrically conductive layer and being formed in a layer located closer to the liquid crystal layer than an area in which the scanning line is arranged.

Abstract: A method of forming a thin-film device includes forming an oxide-semiconductor film formed on the first electrical insulator, and forming a second electrical insulator formed on the oxide-semiconductor film, the oxide-semiconductor film defining an active layer. The oxide-semiconductor film is comprised of a first interface layer located at an interface with the first electrical insulating insulator, a second interface layer located at an interface with the second electrical insulator, and a bulk layer other than the first and second interface layers. The method further includes oxidizing the oxide-semiconductor film to render a density of oxygen holes in at least one of the first and second interlayer layers is smaller than a density of oxygen holes in the bulk layer.

Abstract: Disclosed are a liquid crystal display device 10 and a method of making such liquid crystal display device that improves display quality by providing heat dissipation pattern 4 for effectively dissipating heat generated by the driver ICs 2. The heat dissipation pattern 4 is formed on a glass substrate of a liquid crystal panel 1 along one side thereof so as to minimize non-uniform thermal distribution on the liquid crystal panel 1 at locations adjacent to and distant from the driver ICs 2.

Abstract: A reflector for reflecting incident light from outside includes an insulating film being formed on a substrate and including multiple concavities and convexities, and a metal film formed on the insulating film. Respective convex portions constituting the multiple concavities and convexities are formed into shapes in which positions of peak portions relative to the entire convex portions are tilted in one direction when viewed from a direction of a normal line of the substrate.

Abstract: To achieve TFT having a high light-resistance characteristic with a suppressed light leak current at low cost by simplifying the manufacturing processes. The TFT basically includes a light-shielding film formed on a glass substrate that serves as an insulating substrate; an insulating film formed on the light-shielding film; a semiconductor film formed on the insulating film; and a gate insulating film formed on the semiconductor film. Each layer of a laminate that is configured with three layers of the light-shielding film, the insulating film, and the semiconductor film is patterned simultaneously. Further, each layer of the laminate is configured with silicon or a material containing silicon.

Abstract: A picture displaying method is for displaying a picture by means of a plurality of picture displaying units. A picture signal representing the picture is supplied to each of the picture displaying units. A first picture displaying unit displays a first part of the picture according to the picture signal and produces a start pulse signal after displaying of the first part of the picture. A second picture displaying unit displays a second part of the picture according to the picture signal in response to the start pulse signal.

Abstract: To provide an erasing device whose power consumption required for erasing operations is suppressed, which does not spoil the portability of an optical writing type display medium. In a first display function layer, voltages applied to two cholesteric liquid crystal layers when an erasing voltage is applied between a pair of electrodes are defined as V1, V2, respectively, and threshold voltages with which the cholesteric liquid crystal layers change to the homeotropic alignment are defined as Vth1, Vth2, respectively. In that case, in a state the voltages V1 and V2 are determined according to only each resistance of the cholesteric liquid crystal layers and resistance of a photoconductive layer, i.e., a sufficient time has passed from a point at which the erasing voltage is applied, V1?Vth1 and V2?Vth2 apply.

Abstract: An image forming apparatus includes: a functional element substrate to which a pixel is formed in a predetermined cycle; an opposed substrate formed on the functional element substrate; and an optical device arranged on the opposed substrate, which includes a transparent layer and an optical absorption layer arranged in a cycle of 1/n (n is an integer number) of the cycle of arranging the pixel, and restricts spread of transmitted light.

Abstract: To provide an optical writing device that outputs image light to be recorded to a display recording medium. An optical element thereof includes a two-dimensional periodic structural body including periodic structure sections sectioned along a direction orthogonal to the direction along which transparent layers and light absorption layers are arranged alternately in a repeated manner. At least a part of the periodic structure sections is in a periodic structure in which the transparent layers and the light absorption layers are arranged alternately by varying phases of spatial frequencies of the transparent layers neighboring in the orthogonal direction. Repeated period pitches of the transparent layers and the light absorption layers in the two orthogonal directions of the two-dimensional periodic structural body are set to match with each other, and the repeated period pitches are set to be narrower than a layout pitch of the pixels of the spatial light modulating element.

Abstract: To provide a transflective liquid crystal display apparatus that employs in-plane switching mode (in-plane switching system), which exhibits a reflection property of wide view angles. Provided is a transflective liquid crystal display apparatus which comprises: a reflective area and a transmissive area; an uneven reflective plate provided in the reflective area; a flattening film laminated on the uneven reflective plate; and common electrodes and pixel electrodes arranged on the flattening film, wherein, the uneven reflective plate comprises a diffusive reflecting function that is capable of diffusely reflecting light making incident at an incident angle of 30 degrees towards directions at exit angles of 0-10 degrees, and a surface of the flattening film is set to be substantially flat.

Abstract: A one-stage shift register includes: a first transistor with a drain electrode connected to a corresponding scanning line and with a source electrode connected to a power supply; a second transistor of a same conductivity type, with a drain electrode connected to a gate electrode of the first transistor, with a source electrode connected to the power supply, and with a gate electrode connected to a first external control signal line; a third transistor of the same conductivity type as the fist transistor, with a drain electrode connected to the drain electrode of the second transistor, with a source electrode connected to the power supply, and with a gate electrode connected to a node that uses a bootstrap effect; and a load circuit with one end thereof connected to a second external control signal line and the other end thereof connected to the drain electrode of the second transistor.

Abstract: Provided is an optical element manufacturing method that is capable of forming various kinds of shapes and capable of achieving sophisticated functions, improved yields, and cost reductions. The method includes: a step that applies a transparent photosensitive resin on a transparent substrate with light-shielding patterns provided thereon; a step that forms transparent layers by performing patterning through irradiating exposure light of an arbitrary amount on the transparent photosensitive resin via the transparent substrate with the light-shielding patterns provided thereon; a step that forms light absorption layers by filling a black curable resin between the transparent layers; and an irradiation step that irradiates the exposure light in an oblique direction to the surface of the transparent substrate where the light-shielding patterns are formed in a state where the transparent substrate is being bent.

Abstract: A laser irradiation process includes: scanning a substrate with laser having a predetermined lasing frequency at different irradiation intensities to form a plurality of first irradiation areas corresponding to the irradiation intensities; illuminating the first irradiation areas to reflected light receive from the first irradiation areas; determining microcrystallization intensity based on the received reflected light; and determining irradiation intensity based on the thus determined microcrystallization intensity. The laser irradiation process uses the irradiation intensity for irradiating a polycrystalline film in a product semiconductor device.