Abstract: A growing method of a SiC single crystal includes the steps of thermal treatment of a high purity SiC source for decreasing a specific surface area and increasing a ratio of ?-phase and making a mole fraction of C greater than that of Si in the source, providing the SiC source into a crucible, arranging a SiC seed in the crucible, and growing the SiC single crystal by heating the SiC source.

Abstract: A light emitting diode includes a substrate tilted toward first and second directions simultaneously, a first cladding layer formed with a semiconductor material of a first conductive type on the substrate, an active layer formed on the first cladding layer, and a second cladding layer formed with a semiconductor material of a second conductive type on the active layer, wherein concavo-convexes are formed on the interfaces of the first cladding layer, the second cladding layer, and the active layer, and the (100) substrate is a III-V or a IV-IV group semiconductor substrate, and has a crystal orientation such that a (100) plane of the (100) substrate is inclined 2 to 20° toward the [0-1-1] direction and 1 to 8° toward the [0-11] direction.

Abstract: A light emitting diode includes a substrate tilted toward first and second directions simultaneously, a first cladding layer formed with a semiconductor material of a first conductive type on the substrate, an active layer formed on the first cladding layer, and a second cladding layer formed with a semiconductor material of a second conductive type on the active layer, wherein concavo-convexes are formed on the interfaces of the first cladding layer, the second cladding layer, and the active layer, and the (100) substrate is a III-V or a IV-IV group semiconductor substrate, and has a crystal orientation such that a (100) plane of the (100) substrate is inclined 2 to 20° toward the [0-1-1] direction and 1 to 8° toward the [0-11] direction.

Abstract: A light emitting diode includes a substrate tilted toward first and second directions simultaneously, a first cladding layer formed with a semiconductor material of a first conductive type on the substrate, an active layer formed on the first cladding layer, and a second cladding layer formed with a semiconductor material of a second conductive type on the active layer, wherein concavo-convexes are formed on the interfaces of the first cladding layer, the second cladding layer, and the active layer.

Abstract: A growing method of a SiC single crystal includes the steps of thermal treatment of a high purity SiC source for decreasing a specific surface area and increasing a ratio of a-phase and making a mole fraction of C greater than that of Si in the source, providing the SiC source into a crucible, arranging a SiC seed in the crucible, and growing the SiC single crystal by heating the SiC source.

Abstract: A light emitting diode includes a substrate tilted toward first and second directions simultaneously, a first cladding layer formed with a semiconductor material of a first conductive type on the substrate, an active layer formed on the first cladding layer, and a second cladding layer formed with a semiconductor material of a second conductive type on the active layer, wherein concavo-convexes are formed on the interfaces of the first cladding layer, the second cladding layer, and the active layer.