Patents Assigned to New Imaging Technologies
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Patent number: 11196947Abstract: A matrix-array optical sensor including individual detection cells each including at least one photodiode operating in photovoltaic mode, a first amplifier stage connected directly or indirectly to the photodiode and a capacitance connected directly or indirectly to the output of the first amplifier stage and the voltage of which varies with the illuminance on the photodiode, the sensor being arranged to a ensure a one-way flow of current to or from said capacitance in order to bring the latter to a voltage corresponding to an extremum of the illuminance during an operating cycle of the photodiode.Type: GrantFiled: September 17, 2019Date of Patent: December 7, 2021Assignee: New Imaging TechnologiesInventor: Yang Ni
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Patent number: 10848658Abstract: The invention relates to an imager system comprising a main image sensor (1) and comprising a main matrix (2) of active pixels exhibiting a first instantaneous dynamic span of luminous sensitivity, and a main reading circuit adapted for reading the pixels of the main image sensor (1) and for acquiring a main image on the basis of said reading, an auxiliary image sensor (11) comprising a second matrix (12) of active pixels exhibiting a second instantaneous dynamic span of luminous sensitivity which is more extensive than the first instantaneous dynamic span of luminous sensitivity, and an auxiliary reading circuit adapted for reading the active pixels of the auxiliary image sensor (11) and for acquiring an auxiliary image on the basis of said reading, and a data processing unit (10) configured to determine at least one value of an acquisition parameter of the main image sensor on the basis of the auxiliary image.Type: GrantFiled: April 24, 2017Date of Patent: November 24, 2020Assignee: New Imaging TechnologiesInventor: Yang Ni
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Publication number: 20190124242Abstract: The invention relates to an imager system comprising a main image sensor (1) and comprising a main matrix (2) of active pixels exhibiting a first instantaneous dynamic span of luminous sensitivity, and a main reading circuit adapted for reading the pixels of the main image sensor (1) and for acquiring a main image on the basis of said reading, an auxiliary image sensor (11) comprising a second matrix (12) of active pixels exhibiting a second instantaneous dynamic span of luminous sensitivity which is more extensive than the first instantaneous dynamic span of luminous sensitivity, and an auxiliary reading circuit adapted for reading the active pixels of the auxiliary image sensor (11) and for acquiring an auxiliary image on the basis of said reading, and a data processing unit (10) configured to determine at least one value of an acquisition parameter of the main image sensor on the basis of the auxiliary image.Type: ApplicationFiled: April 24, 2017Publication date: April 25, 2019Applicant: New Imaging TechnologiesInventor: Yang Ni
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Patent number: 9018727Abstract: The invention relates to an InGaAs photodiode army (101) and to the method for manufacturing same, wherein said array includes: a cathode including at least one indium-phosphide substrate layer (4) and an active gallium-indium arsenide layer (5); and a plurality of anodes (3) at least partially formed in the active gallium-indium arsenide layer by diffusing a P-type dopant, the interaction between an anode (3) and the cathode forming a photodiode. According to said method, an indium-phosphide passivation layer (6) is arranged on the active layer before the diffusion of the P-type dopant forming the anodes (3), and a first selective etching is performed so as to remove, over the entire thickness thereof, an area (10) of the passivation layer (6) surrounding each anode (3).Type: GrantFiled: July 11, 2012Date of Patent: April 28, 2015Assignee: New Imaging TechnologiesInventor: Yang Ni
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Patent number: 8884205Abstract: An image matrix sensor having a plurality of individual detection structures associated with respective pixels, each individual detection structure including a photodiode having at least one solar cell mode operating range, a first amplifier stage constantly supplied with power and receiving, as an input, a voltage dependent on the voltage of the photodiode which falls within said range; and a second amplifier stage linked to the output of the first amplifier stage and supplied with power in a different manner according to whether or not the first amplifier stage is read.Type: GrantFiled: March 10, 2010Date of Patent: November 11, 2014Assignee: New Imaging TechnologiesInventor: Yang Ni
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Patent number: 7798405Abstract: The invention relates to an optical imagery device comprising: a light source, an optical medium in which the light coming from the source can be propagated; a detection surface defined by a frontier of the optical medium; an image sensor towards which the light coming from the light source and undergoing reflection onto the detection surface is reflected. The inventive device is characterized in that it is arranged in such a way that from the sensor the source appears to be sufficiently pointed to enable an image to be formed directly on the sensor.Type: GrantFiled: January 3, 2006Date of Patent: September 21, 2010Assignee: New Imaging TechnologiesInventor: Yang Ni