Patents Assigned to NEW SILICON CORPORATION PTE LTD
  • METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE THEREOF
    Publication number: 20220293820
    Abstract: A method of fabricating a semiconductor device (200) is described. According to a described embodiment, the method comprises: (i) forming a 111-V semiconductor material layer (206) comprising a substrate layer (208) and a device layer (210) attached to the substrate layer (208); and (ii) forming an electrically conductive interlayer (228) to the device layer (210) prior to bonding the electrically conductive interlayer (228) to a partially processed CMOS device layer (204) having at least one transistor (205).
    Type: Application
    Filed: September 25, 2020
    Publication date: September 15, 2022
    Applicant: NEW SILICON CORPORATION PTE LTD
    Inventors: Eugene A. Fitzgerald, Kenneth Eng Kian Lee, Chen Yeow NG, Fayyaz Moiz Singaporewala