Abstract: Each device of a family of removable digital media devices (310, 320, 330, 340, 350 and 360) may be plugged into a host to permits the host to store data in it or to retrieve data from it. The form factors of the digital media devices in the family and the connector system used by the digital media devices are compact for minimizing the volume of space occupied in portable devices and for easy storage. Some embodiments (310, 320, 330, 350 and 360) provide an elongated compact form factor that provides easy and firm grasping for insertion and removal. The digital media devices of the family have respective body portions (312, 322, 332, 342, 352 and 362) preferably of a rigid or semi-rigid material. Preferably, the digital media devices of the family use serial memory requiring few power and signal lines, so that few electrical contacts are required.

Abstract: A low power recording devices permits various flexible power options, including a no-battery option in which the recording device satisfies its entire power requirements from the telephone wall socket and from the RS-232 socket of a computer, and a no-battery option in which the recording device satisfies its entire power requirements from the power source for the mobile telephone. Neither no-battery option exerts a significant additional load on the power source. Voice signals are digitized and stored in low power non-volatile memory. Facsimile signals either are digitized and stored in low power non-volatile memory, or are decoded and stored in low power non-volatile memory. An audio recording and playback capability through an integrated speaker-microphone pair is provided.

Abstract: Each device of a family of removable digital media devices (310, 320, 330, 340, 350 and 360) may be plugged into a host to permits the host to store data in it or to retrieve data from it. The form factors of the digital media devices in the family and the connector system used by the digital media devices are compact for minimizing the volume of space occupied in portable devices and for easy storage. Some embodiments (310, 320, 330, 350 and 360) provide an elongated compact form factor that provides easy and firm grasping for insertion and removal. The digital media devices of the family have respective body portions (312, 322, 332, 342, 352 and 362) preferably of a rigid or semi-rigid material. Preferably, the digital media devices of the family use serial memory requiring few power and signal lines, so that few electrical contacts are required.

Abstract: A computer system includes a computing device such as a microcontroller and a memory device. The memory device is illustrtively a serial device connected to the serail port of the microcontrollerThe memory device includes a page latch load circuit which provides serial I/O to the microcontroller and transfers I/O bits in a predetermined order to/from the page latches. Page latches are connected over many bit lines to a memory cell array. The page latches not only supports programming and reading of sectors in the memory cell array, but also provides one or more of the following functions: directly accessable to the microcontroller as an SRAM scratch pad, directly loadable from the memory cell array to facilitate single byte "read-modify-write" operations, and loadable during programming operations to support real time applications.

Abstract: A memory (1) operative in an erase mode, a program mode, or a read mode includes a memory cell array, word lines (30, 40, 50, 60), a row decoder (9) connected to the word lines, bit lines (2, 4, 6, 8), a precharge circuit (70, 72, 74, 76, 78, 80) connected to the bit lines, a load circuit (22, 23, 24, 25, 26, 27, 28, 29) connected to the bit lines, and a sense circuit (12, 14, 16, 18) connected to the bit lines. The memory array includes both floating gate MOSFET transistors and switch MOSFET transistors arranged in groups associated with respective subsets of word lines and bit lines.

Abstract: A memory cell (510) suitable for an array of memory cells (100) has a source that is part of a buried bit line and a drain that is part of an adjacent buried bit line. The memory cell also includes a split gate arrangement (580) in which the gate is integral with the word line (120), with a part of the gate being the control gate of an EEPROM transistor which erases and programs on the principle of Fowler-Nordheim tunneling (560, 570), and another part of the gate being the control gate of a series select transistor. The memory cell is erased by placing a voltage on the word line which is positive relative to the bit line and the substrate and of sufficient magnitude to cause tunneling. The memory cell is programmed by placing a negative voltage on the word line and a voltage corresponding to the logical value on the bit line. The bit line voltage is sufficient to cause tunneling for one logical value, and insufficient to cause tunneling for the other logical value.

Abstract: A memory (1) operative in an erase mode, a program mode, or a read mode includes a memory cell array, word lines (30, 40, 50, 60), a row decoder (9) connected to the word lines, bit lines (2, 4, 6, 8), a precharge circuit (70, 72, 74, 76, 78, 80) connected to the bit lines, a load circuit (22, 23, 24, 25, 26, 27, 28, 29) connected to the bit lines, and a sense circuit (12, 14, 16, 18) connected to the bit lines. The memory array includes both floating gate MOSFET transistors and switch MOSFET transistors arranged in groups associated with respective subsets of word lines and bit lines.

Abstract: A single-transistor EEPROM device of the present invention comprises memory transistors in banks similar to NAND structures wherein the control gates of the memory transistors have negative voltages applied in various modes that allow reading, writing, and programming regardless of the V.sub.th of nonselected memory transistors in a bank. Programming and erasing results from various combinations of negative and positive voltages are used on the select gates together with positive voltages less than that alone which is necessary to induce Fowler-Nordheim tunneling are applied to the bit lines.

Abstract: A single-transistor non-volatile memory cell MOS transistor with a floating gate and a control gate using two levels of polysilicon and a tunnel dielectric that overlaps the drain area wherein a tunneling of charge can take place between the drain and the floating gate by means of a system of applied voltages to the control gate and drain.

Abstract: A single-transistor EEPROM device of the present invention comprises memory transistors in banks similar to NAND structures wherein the control gates of the memory transistors have negative voltages applied in various modes that allow reading, writing, and programming regardless of the V.sub.th of nonselected memory transistors in a bank. Programming and erasing results from various combinations of negative and positive voltages are used on the select gates together with positive voltages less than that alone which is necessary to induce Fowler-Nordheim tunneling are applied to the bit lines.

Abstract: A method of controllably programming an electrically erasable programmable read only memory comprises the step of erasing a group of memory cells of the memory into a high threshold state. The group including data cells and monitor cells. The data cells of the group are programmed in accordance with data presented to the memory, and the monitor cells of the group are programmed to a low threshold state. The threshold voltage of the monitor cells is sampled, and the monitor cell programming step and the sampling step are repeated until an excessively low threshold voltage is sampled. If the sampling is done with a sampling voltage higher than the read voltage, the cell threshold voltage generally is not excessive. In any event, an excessively low threshold is raised by a controlled erasure.

Abstract: A memory (1) operative in an erase mode, a program mode, or a read mode includes a memory cell array, word lines (30, 40, 50, 60), a row decoder (9) connected to the word lines, bit lines (2, 4, 6, 8), a precharge circuit (70, 72, 74, 76, 78, 80) connected to the bit lines, a load circuit (22, 23, 24, 25, 26, 27, 28, 29) connected to the bit lines, and a sense circuit (12, 14, 16, 18) connected to the bit lines. The memory array includes both floating gate MOSFET transistors and switch MOSFET transistors arranged in groups associated with respective subsets of word lines and bit lines.

Abstract: A magnetic media hard disk is emulated in a solid state hard disk having a disk controller, a data buffer, a microcontroller, and a disk emulator section. The disk emulator section includes a disk emulator interface and a memory array. The architecture of the memory array includes a number of memory banks which typically correspond to respective sectors of the emulated hard disk, but could correspond to respective groups of sectors of the emulated hard disk. Each of the memory banks has its own serial data line and its own serial clock line, and include a number of serial memory devices that connect to the bank serial data line and bank clock line with respective serial data and clock lines. Each of the serial memory devices also has a static address corresponding to a head address of the emulated hard disk.

Abstract: A single-transistor non-volatile memory cell MOS transistor with a floating gate and a control gate using two levels of polysilicon and a tunnel dielectric that overlaps the drain area wherein a tunneling of charge can take place between the drain and the floating gate by means of a system of applied voltages to the control gate and drain.

Abstract: A single-transistor EEPROM device of the present invention comprises memory transistors in banks similar to NAND structures wherein the control gates of the memory transistors have negative voltages applied in various modes that allow reading, writing, and programming regardless of the V.sub.th of nonselected memory transistors in a bank. Programming and erasing results from various combinations of negative and positive voltages are used on the select gates together with positive voltages less than that alone which is necessary to induce Fowler-Nordheim tunneling are applied to the bit lines.