Abstract: Polishing pads having a polishing surface with continuous protrusions are described. Methods of fabricating polishing pads having a polishing surface with continuous protrusions are also described.

Abstract: Polishing pads with apertures are described. Methods of fabricating polishing pads with apertures are also described.

Abstract: Homogeneous polishing pads for polishing semiconductor substrates using eddy current end-point detection are described. Methods of fabricating homogeneous polishing pads for polishing semiconductor substrates using eddy current end-point detection are also described.

Abstract: Polishing pads with a polishing surface layer having an aperture or opening above a transparent foundation layer are described. In an example, a polishing pad for polishing a substrate includes a foundation layer having a global top surface and a transparent region. A polishing surface layer is attached to the global top surface of the foundation layer. The polishing surface layer has a polishing surface and a back surface. An aperture is disposed in the polishing pad from the back surface through to the polishing surface of the polishing surface layer, and aligned with the transparent region of the foundation layer. The foundation layer provides an impermeable seal for the aperture at the back surface of the polishing surface layer. Methods of fabricating such polishing pads are also described.

Abstract: Polishing pads with multi-modal distributions of pore diameters are described. Methods of fabricating polishing pads with multi-modal distributions of pore diameters are also described.

Abstract: CMP pads having novel groove configurations are described. For example, described herein are CMP pads comprising primary grooves, secondary grooves, a groove pattern center, and an optional terminal groove. The CMP pads may be made from polyurethane or poly (urethane-urea), and the grooves produced therein may be made by a method from the group consisting of molding, laser writing, water jet cutting, 3-D printing, thermoforming, vacuum forming, micro-contact printing, hot stamping, and mixtures thereof.

Abstract: Polishing pads with homogeneous bodies having discrete protrusions thereon are described. In an example, a polishing pad for polishing a substrate includes a homogeneous body having a polishing side and a back side. The homogeneous body is composed of a material having a first hardness. A plurality of discrete protrusions is disposed on and covalently bonded with the polishing side of the homogeneous body. The plurality of discrete protrusions is composed of a material having a second hardness different from the first hardness. Methods of fabricating polishing pads with homogeneous bodies having discrete protrusions thereon are also described.

Abstract: The present application relates to polishing pads for chemical mechanical planarization (CMP) of substrates, and methods of fabrication and use thereof. The pads described in this invention are customized to polishing specifications where specifications include (but not limited to) to the material being polished, chip design and architecture, chip density and pattern density, equipment platform and type of slurry used. These pads can be designed with a specialized polymeric nano-structure with a long or short range order which allows for molecular level tuning achieving superior themo-mechanical characteristics. More particularly, the pads can be designed and fabricated so that there is both uniform and nonuniform spatial distribution of chemical and physical properties within the pads.

Abstract: Described herein are polishing apparatus, polishing formulations, and polymeric substrates for use in polishing surfaces, and related methods. The apparatus, formulations, substrates, and methods may each be used in applications involving the polishing of metal and/or metal-containing surfaces such as semiconductor wafers. The apparatus, formulations, polymeric substrates, and related methods described herein may be used without abrasives, and in some instances, without mechanical friction of a pad surface against the surface to be polished. Therefore, defects on a polished surface due to such mechanical polishing processes may be reduced.

Abstract: Polishing pads with alignment marks are described. Methods of fabricating polishing pads with alignment marks are also described.

Abstract: Polishing pads having porogens with liquid filler and methods of fabricating polishing pads having porogens with liquid filler are described. In an example, a polishing pad for polishing a substrate includes a polishing body having a polymer matrix and a plurality of porogens dispersed throughout the polymer matrix. Each of the plurality of porogens has a shell with a liquid filler. The liquid filler has a boiling point less than 100 degrees Celsius at a pressure of 1 atm, a density less than water, or both.

Abstract: Polishing pads with concentric or approximately concentric polygon groove patterns are described. Methods of fabricating polishing pads with concentric or approximately concentric polygon groove patterns are also described.

Abstract: CMP pads having novel groove configurations are described. For example, described herein are CMP pads comprising primary grooves, secondary grooves, a groove pattern center, and an optional terminal groove. The CMP pads may be made from polyurethane or poly (urethane-urea), and the grooves produced therein may be made by a method from the group consisting of molding, laser writing, water jet cutting, 3-D printing, thermoforming, vacuum forming, micro-contact printing, hot stamping, and mixtures thereof.

Abstract: Soft polishing pads for polishing semiconductor substrates are described. A soft polishing pad includes a molded homogeneous polishing body having a thermoset, closed cell polyurethane material with a hardness approximately in the range of 20 Shore D to 45 Shore D.

Abstract: Polishing pads with grooved foundation layers and polishing surface layers are described. In an example, a polishing pad for polishing a substrate includes a foundation layer having a pattern of grooves disposed therein. A continuous polishing surface layer is attached to the pattern of grooves of the foundation layer. In another example, a polishing pad for polishing a substrate includes a foundation layer with a surface having a pattern of protrusions disposed thereon. Each protrusion has a top surface and sidewalls. A non-continuous polishing surface layer is attached to the foundation layer and includes discrete portions. Each discrete portion is attached to the top surface of a corresponding one of the protrusions of the foundation layer. Methods of fabricating polishing pads with a polishing surface layer bonded to a grooved foundation layer are also described.

Abstract: Polishing pads with foundation layers and polishing surface layers are described. In an example, a polishing pad for polishing a substrate includes a foundation layer. A polishing surface layer is bonded to the foundation layer. Methods of fabricating polishing pads with a polishing surface layer bonded to a foundation layer are also described.

Abstract: Polishing pads for polishing semiconductor substrates using eddy current end-point detection are described. Methods of fabricating polishing pads for polishing semiconductor substrates using eddy current end-point detection are also described.

Abstract: A CMP polishing pad comprising (a) a polishing layer having a polishing surface and a back surface opposite said polishing surface; said polishing layer having at least one cured opaque thermoset polyurethane region and at least one aperture region; said at least one cured opaque thermoset region has a porosity from about 10% to about 55% by volume; said at least one aperture region having (1) a top opening positioned below the polishing surface, (2) a bottom opening that is co-planar with said back surface and (3) straight line vertical sidewalls extending from said aperture top opening to said aperture bottom opening; said at least one aperture region filled with a cured plug of thermoset polyurethane local area transparency material that has a light transmission of less than 80% at a wavelength from 700 to 710 nanometers and is chemically bonded directly to a thermoset polyurethane opaque area; (b) an aperture-free removable release sheet covering at least a portion of said back surface of the polishing l

Abstract: Polishing pads with alignment marks are described. Methods of fabricating polishing pads with alignment marks are also described.

Abstract: Methods for producing in-situ grooves in CMP pads are provided. In general, the methods for producing in-situ grooves comprise the steps of patterning a silicone lining, placing the silicone lining in, or on, a mold, adding CMP pad material to the silicone lining, and allowing the CMP pad to solidify. CMP pads comprising novel groove designs are also described. For example, described here are CMP pads comprising concentric circular grooves and axially curved grooves, reverse logarithmic grooves, overlapping circular grooves, lassajous groves, double spiral grooves, and multiply overlapping axially curved grooves. The CMP pads may be made from polyurethane, and the grooves produced therein may be made by a method from the group consisting of silicone lining, laser writing, water jet cutting, 3-D printing, thermoforming, vacuum forming, micro-contact printing, hot stamping, and mixtures thereof.