Abstract: A method for manufacturing a semiconductor stack structure with an ultra-thin die includes: forming a stop layer structure inside a semiconductor substrate by ion implantation, and then providing electrical components and an inner connection layer on an active surface of the semiconductor substrate to form a semiconductor wafer; enabling inner connection layers of two semiconductor wafers to be opposite and bonded together up and down; removing part of the semiconductor substrate and the stop layer structure of the upper one of the semiconductor wafers from a backside of the upper one of the semiconductor wafers through a backside grinding process and a thinning process, enabling the upper one of the semiconductor wafers to form a thinned semiconductor wafer; carrying out bonding, backside grinding and thinning processes on the other semiconductor wafer one by one on the thinned semiconductor wafer to stack another thinned semiconductor wafer upwards one by one; and finally, carrying out backside grinding and

Abstract: A method includes manufacturing a plurality of wafers each having a substrate having an active surface and a backside, and a stop layer dividing the substrate into a first substrate part at a side of the active surface and a second substrate part at a side of the backside; on a first wafer of the plurality of wafers, removing the second substrate part and the stop layer; bonding a second wafer of the plurality of wafers on the first wafer with first substrate part of the second wafer facing a surface of the first wafer that is exposed by removing the stop layer and, on the second wafer, performing the same processes of removing the second substrate part and stop layer of the second wafer; repeating the bonding and removing the second substrate part and stop layer with one or more wafers to form a stack of wafers.