Abstract: A substrate processing method for efficiently controlling charges induced into a substrate is provided. The substrate processing method comprises inserting a first substrate of a first condition into a first manufacturing apparatus, controlling charges of the first substrate by using a first discharge recipe in the first manufacturing apparatus, taking out the first substrate from the first manufacturing apparatus, inserting a second substrate of a second condition into a second manufacturing apparatus different from the first manufacturing apparatus, controlling charges of the second substrate by using a second discharge recipe different from the first discharge recipe in the second manufacturing apparatus, and taking out the second substrate from the second manufacturing apparatus.

Abstract: A cell-to-cell comparison method for inspecting a defect in a subject in which unit cells that may be expressed by a two-dimensional (2D) vector are periodically arranged according to an embodiment of the present invention includes: obtaining an image of the subject including an array of the unit cells; generating a tile that is a set of pixels corresponding to the same position in a plurality of unit cells within the array in the image; determining a gray level of each of a plurality of pixels within the tile; and determining whether the plurality of pixels within the tile are defective on the basis of the determined gray level of each of the plurality of pixels.

Abstract: An apparatus for removing static electricity of a semiconductor substrate, which removes static electricity embedded inside a thin film on the semiconductor substrate by emitting vacuum ultraviolet (VUV) light to the semiconductor substrate disposed inside a vacuum chamber. The apparatus includes: a VUV generator disposed at an upper side of the vacuum chamber and provided with a VUV lamp configured to emit small-area VUV light into an inside of the vacuum chamber; and a light diffusion unit disposed below the VUV generator and configured to diffuse incident VUV light into a wide area and output the diffused VUV light to the semiconductor substrate disposed below the light diffusion unit.

Abstract: A cell-to-cell comparison method for inspecting a defect in a subject in which unit cells that may be expressed by a two-dimensional (2D) vector are periodically arranged according to an embodiment of the present invention includes: obtaining an image of the subject including an array of the unit cells; generating a tile that is a set of pixels corresponding to the same position in a plurality of unit cells within the array in the image; determining a gray level of each of a plurality of pixels within the tile; and determining whether the plurality of pixels within the tile are defective on the basis of the determined gray level of each of the plurality of pixels.

Abstract: ProA wafer image inspection apparatus for inspecting defects of a semiconductor wafer comprises: a lighting portion for generating light; a lens portion for obtaining a wafer image, which is reflected after the light has been reflected onto a wafer to be inspected, and delivering the wafer image by lighting same in one direction; a dividing optical element for dividing the wafer image delivered from the lens portion; an image detection portion comprising a plurality of image-capturing elements, which are installed so that images which have passed through the lens portion and the dividing optical element are respectively formed on different focus positions; and an image processing portion for combining the images on different focus positions captured by the plurality of image pick-up elements to form a TSOM image, and comparing the TSOM image with a TSOM image of a normal semiconductor apparatus part to determine whether an object is defective.