Patents Assigned to Nextron Corporation
  • Patent number: 11867753
    Abstract: A probe assembly and a micro vacuum probe station comprising same are disclosed. A probe assembly according to one embodiment may comprise: a base; a guide rail installed on the base; a guide member sliding along the guide rail; a probe connected to the guide member and of which one side contacts a wafer to inspect electrical properties of the wafer; and a thin film connector connected to the other side of the probe so as to supply electricity to the probe.
    Type: Grant
    Filed: May 7, 2019
    Date of Patent: January 9, 2024
    Assignee: NEXTRON CORPORATION
    Inventors: Hakbeom Moon, Yunhyeong Jang, Jisu Seong, Nakyeong Kim
  • Patent number: 8129745
    Abstract: The instant pulse filter according to the present invention, which may cause a malfunction or a short life span of a semiconductor device, is made using an aluminum anodic oxidation, comprising—a first step for forming an aluminum thin film layer on an upper side of an insulator substrate; a second step for forming an aluminum oxide thin film layer having a pore by oxidizing the aluminum thin film layer by means of an anodic oxidation; a third step for depositing a metallic material on an upper side of the aluminum thin film layer for filling the pore; a fourth step for forming a nano rod in the interior of the aluminum oxide thin film layer by eliminating the metallic material deposited except in the pore; a fifth step for forming an internal electrode on an upper side of the aluminum oxide thin film layer having the nano rod; a sixth step for forming a protective film layer on an upper side of the same in order to protect the aluminum oxide thin film layer and the internal electrode from the external enviro
    Type: Grant
    Filed: April 3, 2009
    Date of Patent: March 6, 2012
    Assignee: Nextron Corporation
    Inventors: Hak Beom Moon, Jin Hyung Cho, Suc Hyun Bang, Cheol Hwan Kim, Yoon Hyung Jang