Abstract: An improved Bernoulli end effector for holding, handling, and transporting ultra-thin substrates includes edge guides to aid in the positioning of the substrate and may include friction pads that impede motion of the substrate lifted by the end effector. The Bernoulli end effector may be incorporated into an apparatus and method for supinating a substrate so that both surfaces of the substrate can be processed. In addition, the Bernoulli end effector may be used to place ultra-thin substrates on and retrieve substrates from a substrate handling structure that includes weights that prevent the substrates from bowing or flexing during processing and includes guides that prevent the ultra-thin substrates from moving or translating on the surface of the substrate handling structure.

Abstract: A substrate processing pallet has a top surface and a plurality of side surfaces. The top surface has at least one recess adapted to receive a substrate. The recess includes a support structure adapted to contact a portion of a substrate seated in the recess and a plurality of apertures each adapted to accommodate a lift pin. Lift pins can extend through the apertures initially to support the substrate and retract to deposit the substrate onto the support structure. A side surface includes a process positioning feature adapted to engage with a feature located in a process chamber to position the pallet. A side surface includes a positioning feature adapted to engage with an end effector alignment feature to position the pallet with respect to the end effector during transport. A side surface includes support features adapted to engage with end effector support features to support the pallet during transport.

Abstract: A substrate processing pallet has a top surface and a plurality of side surfaces. The top surface has at least one recess adapted to receive a substrate. The recess includes a support structure adapted to contact a portion of a substrate seated in the recess and a plurality of apertures each adapted to accommodate a lift pin. Lift pins can extend through the apertures initially to support the substrate and retract to deposit the substrate onto the support structure. A side surface includes a process positioning feature adapted to engage with a feature located in a process chamber to position the pallet. A side surface includes a positioning feature adapted to engage with an end effector alignment feature to position the pallet with respect to the end effector during transport. A side surface includes support features adapted to engage with end effector support features to support the pallet during transport.

Abstract: A substrate processing pallet has a top surface and a plurality of side surfaces. The top surface has at least one recess adapted to receive a substrate. The recess includes a support structure adapted to contact a portion of a substrate seated in the recess and a plurality of apertures each adapted to accommodate a lift pin. Lift pins can extend through the apertures initially to support the substrate and retract to deposit the substrate onto the support structure. A side surface includes a process positioning feature adapted to engage with a feature located in a process chamber to position the pallet. A side surface includes a positioning feature adapted to engage with an end effector alignment feature to position the pallet with respect to the end effector during transport. A side surface includes support features adapted to engage with end effector support features to support the pallet during transport.

Abstract: A method and apparatus for integrating multipolar confinement with permanent magnetic electron cyclotron resonance plasma sources to produce highly uniform plasma processing for use in semiconductor fabrication and related fields. In a preferred embodiment, the plasma processing apparatus includes a vacuum chamber, a workpiece stage within the chamber, a permanent magnet electron cyclotron resonance plasma source directed at said chamber, and a system of permanent magnets for plasma confinement about the periphery of said chamber. The permanent magnets for plasma confinement are arranged in a multiplicity of rings with the plane of the rings perpendicular to the vacuum chamber axis and to the direction of propagation of the microwave into the vacuum chamber. The number of rings is chosen with respect to the vacuum chamber dimensions to produce a large, low magnetic field region in the region of the vacuum chamber adjacent to the workpiece stage.

Abstract: A multi-layer sputter deposition chamber or cluster tool module is described. The sputter deposition chamber includes a plurality of magnetrons mounted on a rotatable member that defines an aperture. A predetermined one of the plurality of magnetrons is positionable proximate to a substrate in the sputter deposition chamber. A transport mechanism transports the substrate in a path of the sputtered ions in a first and a second direction that is substantially opposite to the first direction.