Abstract: A metal member includes a metal substrate, a first intermediate plating layer, a second intermediate plating layer, and a precious metal plating layer. The metal substrate includes a surface constituted of a plurality of crystal grains. The first intermediate plating layer is directly formed on the plurality of crystal grains of the metal substrate, contains a nickel element, and is non-oriented with respect to each crystal orientation of the plurality of crystal grains of the metal substrate. The second intermediate plating layer is directly formed on the first intermediate plating layer. The precious metal plating layer is formed on the second intermediate plating layer.

Abstract: A first frame is supported by a heat sink plate, surrounds an unmounted region of the heat sink plate, contains a resin, and has a first surface. A second frame contains a resin, and has a second surface opposing the first surface. An external terminal electrode passes between the first surface and the second surface. An adhesive layer contains a resin, and includes a lower portion, an upper portion, and an intermediate portion. The lower portion connects the external terminal electrode and the first surface to each other. The upper portion connects the external terminal electrode and the second surface to each other. The intermediate portion is disposed within a through hole of the external terminal electrode, and connects the lower portion and the upper portion to each other.

Abstract: A package has a cavity to be sealed by a lid. The package includes a heat sink having a coefficient of thermal expansion of 9 ppm/° C. or more and 15 ppm/° C. or less from 25° C. to 100° C. and a frame disposed on the heat sink, made of ceramics, and surrounding the cavity in plan view. An outer edge of the frame includes a first linear portion extending along a first direction, a second linear portion extending along a second direction orthogonal to the first direction, and a chamfer connecting the first linear portion and the second linear portion in plan view.

Abstract: In a ceramic sintered body, the Zr content is 17.5 mass %-23.5 mass % in terms of ZrO2, the Hf content is 0.3 mass %-0.5 mass % in terms of HfO2, the Al content is 74.3 mass %-80.9 mass % in terms of Al2O3, the Y content is 0.8 mass %-1.9 mass % in terms of Y2O3, the Mg content is 0.1 mass %-0.8 mass % in terms of MgO, the Si content is 0.1 mass %- and 1.5 mass % in terms of SiO2, and the Ca content is 0.03 mass %-0.35 mass % in terms of CaO. The total content of Na and K is 0.01 mass %-0.10 mass %, when the K content is converted to K2O and the Na content is converted to Na2O. The balance content is 0.05 mass % or less in terms of oxide.

Abstract: An external terminal electrode is attached to a frame, and the frame contains a first resin, and has a first adhered surface. A heat sink plate supports the frame, has an unmounted region where a power semiconductor element is to be mounted within the frame in plan view, is made of metal, and has a second adhered surface. An adhesive layer contains a second resin different from the first resin, and adheres the first adhered surface of the frame and the second adhered surface of the heat sink plate to each other. One of the first and second adhered surfaces includes a flat portion and a protruding portion. The protruding portion protrudes from the flat portion and opposes the other one of the first adhered surface and the second adhered surface with the adhesive layer therebetween.

Abstract: A heat sink includes first to fifth layers. The first layer supports a frame made of ceramics, is made of copper, and has a thickness t1. The second layer is laminated to the first layer, is made of molybdenum, and has a thickness t2. The third layer is laminated to the second layer, is made of copper, and has a thickness t3. The fourth layer is laminated to the third layer, is made of molybdenum, and has a thickness t4. The fifth layer is laminated to the fourth layer, is made of copper, and has a thickness t5. A formula 3?t1/t5?5 is satisfied. A formula 3?t3/t5?5 is satisfied.

Abstract: A terminal substrate includes a signal terminal disposed on a terminal surface of an insulation ceramic layer. An insulation resin layer of a flexible substrate includes a first surface facing the terminal surface, and a second surface on an opposite side of the first surface. A first signal pad disposed on the first surface is joined to the signal terminal. A first penetration conductive part penetrates the insulation resin layer from the first signal pad. A first signal line is disposed on the second surface. A second penetration conductive part penetrates the insulation resin layer from the first signal line. A second signal line is disposed on the first surface. A third penetration conductive part penetrates the insulation resin layer from the second signal line. A second signal pad is disposed on the second surface.

Abstract: A terminal substrate includes a signal terminal disposed on a terminal surface of an insulation ceramic layer. An insulation resin layer of a flexible substrate includes a first surface facing the terminal surface, and a second surface on an opposite side of the first surface. A first signal pad disposed on the first surface is joined to the signal terminal. A first penetration conductive part penetrates the insulation resin layer from the first signal pad. A first signal line is disposed on the second surface. A second penetration conductive part penetrates the insulation resin layer from the first signal line. A second signal line is disposed on the first surface. A third penetration conductive part penetrates the insulation resin layer from the second signal line. A second signal pad is disposed on the second surface.

Abstract: A first frame is supported by a heat sink plate, surrounds an unmounted region of the heat sink plate, contains a resin, and has a first surface. A second frame contains a resin, and has a second surface opposing the first surface. An external terminal electrode passes between the first surface and the second surface. An adhesive layer contains a resin, and includes a lower portion, an upper portion, and an intermediate portion. The lower portion connects the external terminal electrode and the first surface to each other. The upper portion connects the external terminal electrode and the second surface to each other. The intermediate portion is disposed within a through hole of the external terminal electrode, and connects the lower portion and the upper portion to each other.

Abstract: An external terminal electrode is attached to a frame, and the frame contains a first resin, and has a first adhered surface. A heat sink plate supports the frame, has an unmounted region where a power semiconductor element is to be mounted within the frame in plan view, is made of metal, and has a second adhered surface. An adhesive layer contains a second resin different from the first resin, and adheres the first adhered surface of the frame and the second adhered surface of the heat sink plate to each other. One of the first and second adhered surfaces includes a flat portion and a protruding portion. The protruding portion protrudes from the flat portion and opposes the other one of the first adhered surface and the second adhered surface with the adhesive layer therebetween.

Abstract: A frame is made of a first material. An external terminal electrode is attached to the frame. A heat sink plate supports the frame and includes a mounting region in the frame. The heat sink plate is made of a non-composite material containing copper with purity of 95.0 weight percentage or more. A first adhesive layer bonds the frame and the heat sink plate to each other. The first adhesive layer is made of a second material different from the first material, and has a first composition. A power semiconductor element is mounted on the mounting region of the heat sink plate. A cover is attached to the frame to constitute a sealing space sealing the power semiconductor element without gross leak. A second adhesive layer bonds the frame and the cover to each other, and has a second composition different from the first composition of the first adhesive layer.

Abstract: A metal member includes a metal substrate, a first intermediate plating layer, a second intermediate plating layer, and a precious metal plating layer. The metal substrate includes a surface constituted of a plurality of crystal grains. The first intermediate plating layer is directly formed on the plurality of crystal grains of the metal substrate, contains a nickel element, and is non-oriented with respect to each crystal orientation of the plurality of crystal grains of the metal substrate. The second intermediate plating layer is directly formed on the first intermediate plating layer. The precious metal plating layer is formed on the second intermediate plating layer.

Abstract: A connection structure for a wiring substrate and a flexible substrate including a wiring substrate and a flexible substrate, in which the wiring substrate includes an insulating member, conductor layer, and ground layer, the flexible substrate includes an insulating sheet and metal film, and the metal film includes a signal line pad joined to the conductor layer via a joining material when viewed from the back surface of the flexible substrate. When viewed from behind the flexible substrate, there is an overlap region where the signal line pad and conductor layer overlap. In a cross-section when the overlap region is cut in a direction perpendicular to a signal transmission direction, in a case where a width of the signal line pad including the overlap region is W, and a width of the conductor layer including the overlap region is W0, the connection structure satisfies W0<W.

Abstract: A power module substrate allows prompt heat dissipation from a semiconductor device and avoids separation of a ceramic plate and a copper plate at their joint interface and cracks in the ceramic plate. A power module substrate for mounting a semiconductor device includes a ceramic plate, a copper circuit plate on a main surface of the ceramic plate, and a heat dissipation copper plate on a surface of the ceramic plate opposite to the main surface. The copper circuit plate includes at least one first copper circuit plate and at least one second copper circuit plate different from the first circuit board. The first copper circuit plate includes a first portion on which the semiconductor device is mountable, and a second portion outward from the first portion and surrounding the first portion and thinner than the first portion.

Abstract: A highly reliable high-frequency ceramic board appropriately transmitting signals with high frequencies up to 50 GHz includes a flat ceramic substrate, a pair of ground lines bonded to a peripheral portion of a back surface of the ceramic substrate, a first lead pad electrode bonding the ground lines, at least one pair of signal lines between the ground lines, second lead pad electrodes attached where the signal lines are bonded, and a groove-like recess between the second lead pad electrodes. The pair of signal lines forms a differential transmission line. An interval LGS between a first edge of the first lead pad electrode and a second edge of a corresponding second lead pad electrode and an interval LSS between facing second edges satisfy LSS<2LGS.

Abstract: A connection structure for a wiring substrate and a flexible substrate including a wiring substrate and a flexible substrate, in which the wiring substrate includes an insulating member, conductor layer, and ground layer, the flexible substrate includes an insulating sheet and metal film, and the metal film includes a signal line pad joined to the conductor layer via a joining material when viewed from the back surface of the flexible substrate. When viewed from behind the flexible substrate, there is an overlap region where the signal line pad and conductor layer overlap. In a cross-section when the overlap region is cut in a direction perpendicular to a signal transmission direction, in a case where a width of the signal line pad including the overlap region is W, and a width of the conductor layer including the overlap region is W0, the connection structure satisfies W0<W.