Patents Assigned to Nichia Chemical Industries, Ltd.
-
Patent number: 8541794Abstract: A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.Type: GrantFiled: September 30, 2009Date of Patent: September 24, 2013Assignee: Nichia Chemical Industries, Ltd.Inventors: Shinichi Nagahama, Masayuki Senoh, Shuji Nakamura
-
Patent number: 7615804Abstract: A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.Type: GrantFiled: January 3, 2005Date of Patent: November 10, 2009Assignee: Nichia Chemical Industries, Ltd.Inventors: Shinichi Nagahama, Masayuki Senoh, Shuji Nakamura
-
Patent number: 7211822Abstract: A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.Type: GrantFiled: January 3, 2005Date of Patent: May 1, 2007Assignee: Nichia Chemical Industries, Ltd.Inventors: Shinichi Nagahama, Masayuki Senoh, Shuji Nakamura
-
Patent number: 6940103Abstract: A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.Type: GrantFiled: June 23, 2003Date of Patent: September 6, 2005Assignee: Nichia Chemical Industries, Ltd.Inventors: Hiroyuki Kiyoku, Shuji Nakamura, Tokuya Kozaki, Naruhito Iwasa, Kazuyuki Chocho
-
Publication number: 20050127394Abstract: A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.Type: ApplicationFiled: January 3, 2005Publication date: June 16, 2005Applicant: Nichia Chemical Industries, Ltd.Inventors: Shinichi Nagahama, Masayuki Senoh, Shuji Nakamura
-
Publication number: 20050121679Abstract: A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.Type: ApplicationFiled: January 3, 2005Publication date: June 9, 2005Applicant: Nichia Chemical Industries, Ltd.Inventors: Shinichi Nagahama, Masayuki Senoh, Shuji Nakamura
-
Patent number: 6849864Abstract: A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.Type: GrantFiled: June 24, 2003Date of Patent: February 1, 2005Assignee: Nichia Chemical Industries, Ltd.Inventors: Shinichi Nagahama, Masayuki Senoh, Shuji Nakamura
-
Patent number: 6780255Abstract: A magnetic powder of an Sm—Fe—N alloy, which has a mean particle diameter of 0.5 to 10 &mgr;m, and either an average acicularity of 75% or above or an average sphericity of 78% or above. The powder exhibits an extremely high residual magnetization and an extremely high coercive force, since particles characterized by the above acicularity or sphericity have particle diameters approximately equal to that of the single domain particle and nearly spherical particle shapes. The powder can be produced by preparing an Sm—Fe oxide by firing a coprecipitate corresponding to the oxide, mixing the obtained oxide with metallic calcium and subjecting the mixture to reduction/diffusion and nitriding successively.Type: GrantFiled: November 13, 2001Date of Patent: August 24, 2004Assignee: Nichia Chemical Industries, Ltd.Inventors: Yohsiyuki Kawano, Michiya Kume, Keiji Ichinomiya
-
Patent number: 6756611Abstract: A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.Type: GrantFiled: October 2, 2002Date of Patent: June 29, 2004Assignee: Nichia Chemical Industries, Ltd.Inventors: Hiroyuki Kiyoku, Shuji Nakamura, Tokuya Kozaki, Naruhito Iwasa, Kazuyuki Chocho
-
Publication number: 20040094773Abstract: A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.Type: ApplicationFiled: June 23, 2003Publication date: May 20, 2004Applicant: NICHIA CHEMICAL INDUSTRIES, LTD.Inventors: Hiroyuki Kiyoku, Shuji Nakamura, Tokuya Kozaki, Naruhito Iwasa, Kazuyuki Chocho
-
Patent number: 6677619Abstract: A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.Type: GrantFiled: November 17, 2000Date of Patent: January 13, 2004Assignee: Nichia Chemical Industries, Ltd.Inventors: Shinichi Nagahama, Masayuki Senoh, Shuji Nakamura
-
Publication number: 20040004223Abstract: A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.Type: ApplicationFiled: June 24, 2003Publication date: January 8, 2004Applicant: Nichia Chemical Industries, Ltd.Inventors: Shinichi Nagahama, Masayuki Senoh, Shuji Nakamura
-
Publication number: 20030216011Abstract: A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity InxGa1-xN (0<x<1) compound semiconductor doped with p-type and/or n-type impurity. A first clad layer is joined to one surface of the light-emitting layer and formed of an n-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer. A second clad layer is joined to another surface of the light-emitting layer and formed of a low-resistivity, p-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer.Type: ApplicationFiled: June 9, 2003Publication date: November 20, 2003Applicant: Nichia Chemical Industries Ltd.Inventors: Shuji Nakamura, Takashi Mukai, Naruhito Iwasa
-
Patent number: 6580099Abstract: A nitride semiconductor light-emitting device has an active layer of a single-quantum well structure or multi-quantum well made of a nitride semiconductor containing indium and gallium. A first p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided in contact with one surface of the active layer. A second p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided on the first p-type clad layer. The second p-type clad layer has a larger band gap than that of the first p-type clad layer. An n-type semiconductor layer is provided in contact with the other surface of the active layer.Type: GrantFiled: October 11, 2001Date of Patent: June 17, 2003Assignee: Nichia Chemical Industries, Ltd.Inventors: Shuji Nakamura, Shinichi Nagahama, Naruhito Iwasa, Hiroyuki Kiyoku
-
Publication number: 20030094620Abstract: A gallium nitride-based III-V Group compound semi-conductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.Type: ApplicationFiled: November 13, 2002Publication date: May 22, 2003Applicant: Nichia Chemical Industries, Ltd.Inventors: Shuji Nakamura, Takao Yamada, Masayuki Senoh, Motokazu Yamada, Kanji Bando
-
Publication number: 20030037722Abstract: A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.Type: ApplicationFiled: October 2, 2002Publication date: February 27, 2003Applicant: NICHIA CHEMICAL INDUSTRIES, LTD.Inventors: Hiroyuki Kiyoku, Shuji Nakamura, Tokuya Kozaki, Naruhito Iwasa, Kazuyuki Chocho
-
Publication number: 20030015724Abstract: A nitride semiconductor device has a nitride semiconductor layer structure. The structure includes an active layer of a quantum well structure containing an indium-containing nitride semiconductor. A first nitride semiconductor layer having a band gap energy larger than that of the active layer is provided in contact with the active layer. A second nitride semiconductor layer having a band gap energy smaller than that of the first layer is provided over the first layer. Further, a third nitride semiconductor layer having a band gap energy larger than that of the second layer is provided over the second layer.Type: ApplicationFiled: August 28, 2002Publication date: January 23, 2003Applicant: Nichia Chemical Industries, Ltd.Inventors: Shuji Nakamura, Shinichi Nagahama, Naruhito Iwasa
-
Patent number: 6507041Abstract: A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.Type: GrantFiled: January 2, 2001Date of Patent: January 14, 2003Assignee: Nichia Chemical Industries, Ltd.Inventors: Shuji Nakamura, Takao Yamada, Masayuki Senoh, Motokazu Yamada, Kanji Bando
-
Publication number: 20030006424Abstract: A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity InxGa1−xN (0<x<1) compound semiconductor doped with p-type and/or n-type impurity. A first clad layer is joined to one surface of the light-emitting layer and formed of an n-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer. A second clad layer is joined to another surface of the light-emitting layer and formed of a low-resistivity, p-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer.Type: ApplicationFiled: August 27, 2002Publication date: January 9, 2003Applicant: Nichia Chemical Industries Ltd.Inventors: Shuji Nakamura, Takashi Mukai, Naruhito Iwasa
-
Publication number: 20020167019Abstract: ? A nitride semiconductor light-emitting device has an active layer of a single-quantum well structure or multi-quantum well made of a nitride semiconductor containing indium and gallium. A first p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided in contact with one surface of the active layer. A second p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided on the first p-type clad layer. The second p-type clad layer has a larger band gap than that of the first p-type clad layer. An n-type semiconductor layer is provided in contact with the other surface of the active layer.Type: ApplicationFiled: October 11, 2001Publication date: November 14, 2002Applicant: NICHIA CHEMICAL INDUSTRIES, LTD.Inventors: Shuji Nakamura, Shinichi Nagahama, Naruhito Iwasa, Hiroyuki Kiyoku