Abstract: The present invention provides a soundproof cover having: a sound absorbing material; and a skin material adhesively provided on a surface of the sound absorbing material, wherein the skin material has a material having at least one of air permeability or flexibility.

Abstract: A display data packet contains identification information. A display unit communication system includes a control unit, a terminal adaptor to which a terminal adaptor ID is assigned and which is connected to the control unit, and a display unit to which a display unit ID is assigned and which is connected to the terminal adaptor in series and drives a display element according to the display data packet supplied from the control unit. The terminal adaptor receives a display data packet, the terminal adaptor ID of which agrees with that contained in the identification information, and transfers the display data packet to the display unit. The display unit receives the display data packet, the display unit ID of which agrees with that contained in the identification information, and drives the display element to display an image.

Abstract: A light emitting device comprises a light emitting element, a metal package having a recess part for housing the light emitting element and a base part which has one or more through holes, and one or more lead electrode pins which penetrate the through holes and are separated from the through holes by an insulating member respectively. The bottom faces of the lead electrode pins project out from the bottom face of the base part and are positioned on a same plane including an outer bottom face of the recess part. With this configuration, the light emitting device has a good heat radiating characteristic and high mechanical strength.

Abstract: A nitride semiconductor laser device has an improved stability of the lateral mode under high output power and a longer lifetime, so that the device can be applied to write and read light sources for recording media with high capacity. The nitride semiconductor laser device includes an active layer, a p-side cladding layer, and a p-side contact layer laminated in turn. The device further includes a waveguide region of a stripe structure formed by etching from the p-side contact layer. The stripe width provided by etching is within the stripe range of 1 to 3 ?m and the etching depth is below the thickness of the p-side cladding layer of 0.1 ?m and above the active layer. Particularly, when a p-side optical waveguide layer includes a projection part of the stripe structure and a p-type nitride semiconductor layer on the projection part and the projection part of the p-side optical waveguide layer has a thickness of not more than 1 ?m, an aspect ratio is improved in far field image.

Abstract: Each horizontal driving section and a driving control section of a display apparatus have a data communicating function. The driving control section has a first communicating section receiving data from an external device and a second communicating section communicating data with each horizontal driving section. The second communicating section adds individual identification information for identifying each horizontal driving section to the transferred data, and transfers the data in packet format. The horizontal driving section receives the data packet for it based on the identification information, and performs current driving for a display section. The driving control section adds the individual identification information to the control data to be transferred to each horizontal driving section corresponding to connecting form of the horizontal driving sections, and transfers the control data not concerned with connecting order of the horizontal driving sections.

Abstract: A light emitting device having a phosphor substrate, which comprises nitride containing at least one element selected from Group XIII (IUPAC 1989) having a general formula XN, wherein X is at least one element selected from B, Al, Ga and In, a general formula XN:Y, wherein X is at least one element selected from B, Al, Ga and In, and Y is at least one element selected from Be, Mg, Ca, Sr, Ba, Zn, Cd and Hg, or a general formula XN:Y,Z, wherein X is at least one element selected from B, Al, Ga and In, Y is at least one element selected from Be, Mg, Ca, Sr, Ba, Zn, Cd and Hg, and Z is at least one element selected from C, Si, Ge, Sn, Pb, O and S. The phosphor substrate is prepared by crystallization from supercritical ammonia-containing solution and the light emitting device is formed by a vapor phase growth on the phosphor substrate so as to obtain a light emitting device which has a wavelength distribution emitting a white light etc. and a good yield.

Abstract: To provide a lighting apparatus that includes a simple and small moving mechanism capable of changing the light emanation direction and that has superior heat dissipation properties, the lighting apparatus includes a light-emitting unit, and a heat dissipation unit for dissipating heat generated by the light-emitting unit during light emission, wherein a heat transfer unit is connected between the light-emitting unit and the heat dissipation unit, and the light-emitting unit is in surface contact with the heat transfer unit and is connected with the heat transfer unit to be rotatable with one point or one line in the center.

Abstract: A nitride semiconductor device includes a semiconductor layer, a first electrode for establishing an ohmic contact disposed on the semiconductor layer, and a second electrode on the first electrode, having a different shape from that of the first electrode. A joint region is formed with the upper layer of the first electrode and the lower layer of the second electrode. The joint region comprises an element of the platinum group.

Abstract: In order to provide a fluoro-rubber composite which hardly reduces a clean degree of a manufacturing environment and in which any of cracks is hardly generated, a rubber material using the same, and a method of manufacturing a fluoro-rubber molded product, a fluoro rubber is mixed with a tetrafluoroethylene/propylene system copolymer or a tetrafluoroethylene/propylene/vinylidenefluoride system copolymer, and a fluorine thermoplastic resin, and the resulting mixture is compounded with a peroxide cross-linking agent, and a co-cross-linking agent, and if necessary, any other suitable filler or the like, thereby obtaining a fluoro-rubber composite, and cross-linking is performed for the resulting fluoro-rubber composite, thereby obtaining a fluoro-rubber molded product.

Abstract: To provide a phosphor containing a comparatively much red component and having high light emitting efficiency, high brightness and further high durability, the nitride phosphor is represented by the general formula LXMYN((2/3)X+(4/3)Y):R or LXMYOZN((2/3)X+(4/3)Y?(2/3)Z):R (wherein L is at least one or more selected from the Group II Elements consisting of Mg, Ca, Sr, Ba and Zn, M is at least one or more selected from the Group IV Elements in which Si is essential among C, Si and Ge, and R is at least one or more selected from the rare earth elements in which Eu is essential among Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er and Lu.); contains the another elements.

Abstract: A process for obtaining bulk mono-crystalline gallium-containing nitride, eliminating impurities from the obtained crystal and manufacturing substrates made of bulk mono-crystalline gallium-containing nitride has been now proposed.

Abstract: The invention relates to new improvements in a process for crystal growth in the environment of supercritical ammonia-containing solution, which are based on use of specific azide mineralizers and result in the improved bulk Group XIII element nitride monocrystals, in particular balk monocrystalline gallium-containing nitride, intended mainly for variety of nitride-based semiconductor products such as various opto-electronic devices. The invention further relates to a mineralizer used for supercritical ammonia-containing solution which comprises at least one compound selected from the group consisting of LiN3, NaN3, KN3, and CsN3.

Abstract: A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

Abstract: A nitride semiconductor light emitting device comprising an n-side nitride semiconductor layer and a p-side nitride semiconductor layer formed on a substrate, with a light transmitting electrode 10 formed on the p-side nitride semiconductor layer, and the p-side pad electrode 14 formed for the connection with an outside circuit, and the n-side pad electrode 12 formed on the n-side nitride semiconductor layer for the connection with the outside circuit, so as to extract light on the p-side nitride semiconductor layer side, wherein taper angles of end faces of the light transmitting electrode 10 and/or the p-side nitride semiconductor layer are made different depending on the position.