Patents Assigned to Nichia Kagaku Kogyo Kabushiki Kaisha
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Patent number: 7362048Abstract: A light emitting device containing a semiconductor light emitting component and a phosphor, the phosphor is capable of absorbing a part of light emitted by the light emitting component and emitting light of a wavelength different from that of the absorbed light, is provided. A straight line connecting a point of chromaticity corresponding to a spectrum generated by the light emitting component and a point chromaticity corresponding to a spectrum generated by the phosphor is substantially along a black body radiation locus in a chromaticity diagram.Type: GrantFiled: July 1, 2003Date of Patent: April 22, 2008Assignee: Nichia Kagaku Kogyo Kabushiki KaishaInventors: Yoshinori Shimizu, Kensho Sakano, Yasunobu Noguchi, Toshio Moriguchi
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Patent number: 7071616Abstract: A light source having a planar main surface capable of emitting a white light includes a blue LED, an optical guide plate having a planar main surface and an edge face receiving injection of the light from the blue LED, and a coating material of transparent resin or glass containing fluorescent materials positioned between the blue LED and the optical guide plate. The fluorescent materials can be exited by absorption of a part of the blue light from the blue LED to emit fluorescent light and the fluorescent light can be mixed with a remaining part of the blue light to make white light in the optical guide plate.Type: GrantFiled: July 1, 2003Date of Patent: July 4, 2006Assignee: Nichia Kagaku Kogyo Kabushiki KaishaInventors: Yoshinori Shimizu, Kensho Sakano, Yasunobu Noguchi, Toshio Moriguchi, Eiji Nakanishi
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Patent number: 7026756Abstract: A light emitting device includes a light emitting component having an active layer of a semiconductor and a phosphor capable of absorbing a part of light emitted from the light emitting component and emitting light of wavelength different from that of the absorbed light, wherein the light emitting component is a LED which has an active layer constituting a gallium nitride based semiconductor containing Indium and is capable of emitting a blue color light with a peak wavelength within the range from 420 to 490 nm. The phosphor is a garnet fluorescent material activated with cerium which is capable of absorbing a part of the blue color light and thereby emitting light having a broad emission spectrum with a peak wavelength existing around the range from 510 to 600 nm and a tail continuing into the region from 700 to 750 nm.Type: GrantFiled: October 3, 2003Date of Patent: April 11, 2006Assignee: Nichia Kagaku Kogyo Kabushiki KaishaInventors: Yoshinori Shimizu, Kensho Sakano, Yasunobu Noguchi, Toshio Moriguchi
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Publication number: 20040222435Abstract: A light emitting device includes a first light emitting component including a light-emitting semiconductor layer that emits light in blue region, a second light emitting component including a light-emitting semiconductor layer that emits light in red region, and a phosphor capable of absorbing a part of light emitted by the first light emitting component and emitting light in yellow region.Type: ApplicationFiled: June 10, 2004Publication date: November 11, 2004Applicant: Nichia Kagaku Kogyo Kabushiki KaishaInventors: Yoshinori Shimizu, Kensho Sakano, Yasunobu Noguchi, Toshio Moriguchi
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Publication number: 20040090180Abstract: The white light emitting diode comprising a light emitting component using a semiconductor as a light emitting layer and a phosphor which absorbs a part of light emitted by the light emitting component and emits light of wavelength different from that of the absorbed light, wherein the light emitting layer of the light emitting component is a nitride compound semiconductor and the phosphor contains garnet fluorescent material activated with cerium. which contains at least one element selected from the group consisting of Y, Lu, Sc, La, Gd and Sm, and at least one element selected from the group consisting of Al, Ga and In and, and is subject to less deterioration of emission characteristic even when used with high luminance for a long period of time.Type: ApplicationFiled: October 3, 2003Publication date: May 13, 2004Applicant: Nichia Kagaku Kogyo Kabushiki KaishaInventors: Yoshinori Shimizu, Kensho Sakano, Yasunobu Noguchi, Toshio Moriguchi
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Publication number: 20040004437Abstract: The white light emitting diode comprising a light emitting component using a semiconductor as a light emitting layer and a phosphor which absorbs a part of light emitted by the light emitting component and emits light of wavelength different from that of the absorbed light, wherein the light emitting layer of the light emitting component is a nitride compound semiconductor and the phosphor contains garnet fluorescent material activated with cerium which contains at least one element selected from the group consisting of Y, Lu, Sc, La, Gd and Sm, and at least one element selected from the group consisting of Al, Ga and In and, and is subject to less deterioration of emission characteristic even when used with high luminance for a long period of time.Type: ApplicationFiled: July 1, 2003Publication date: January 8, 2004Applicant: Nichia Kagaku Kogyo Kabushiki KaishaInventors: Yoshinori Shimizu, Kensho Sakano, Yasunobu Noguchi, Toshio Moriguchi
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Publication number: 20040000868Abstract: The white light emitting diode comprising a light emitting component using a semiconductor as a light emitting layer and a phosphor which absorbs a part of light emitted by the light emitting component and emits light of wavelength different from that of the absorbed light, wherein the light emitting layer of the light emitting component is a nitride compound semiconductor and the phosphor contains garnet fluorescent material activated with cerium which contains at least one element selected from the group consisting of Y, Lu, Sc, La, Gd and Sm, and at least one element selected from the group consisting of Al, Ga and In and, and is subject to less deterioration of emission characteristic even when used with high luminance for a long period of time.Type: ApplicationFiled: July 1, 2003Publication date: January 1, 2004Applicant: Nichia Kagaku Kogyo Kabushiki KaishaInventors: Yoshinori Shimizu, Kensho Sakano, Yasunobu Noguchi, Toshio Moriguchi
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Patent number: 6614179Abstract: The white light emitting diode comprising a light emitting component using a semiconductor as a light emitting layer and a phosphor which absorbs a part of light emitted by the light emitting component and emits light of wavelength different from that of the absorbed light, wherein the light emitting layer of the light emitting component is a nitride compound semiconductor and the phosphor contains garnet fluorescent material activated with cerium which contains at least one element selected from the group consisting of Y, Lu, Sc, La, Gd and Sm, and at least one element selected from the group consisting of Al, Ga and In and, and is subject to less deterioration of emission characteristic even when used with high luminance for a long period of time.Type: GrantFiled: December 10, 1999Date of Patent: September 2, 2003Assignee: Nichia Kagaku Kogyo Kabushiki KaishaInventors: Yoshinori Shimizu, Kensho Sakano, Yasunobu Noguchi, Toshio Moriguchi
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Patent number: 6608332Abstract: The white light emitting diode comprising a light emitting component using a semiconductor as a light emitting layer and a phosphor which absorbs a part of light emitted by the light emitting component and emits light of wavelength different from that of the absorbed light, wherein the light emitting layer of the light emitting component is a nitride compound semiconductor and the phosphor contains garnet fluorescent material activated with cerium which contains at least one element selected from the group consisting of Y, Lu, Sc, La, Gd and Sm, and at least one element selected from the group consisting of Al, Ga and In and, and is subject to less deterioration of emission characteristic even when used with high luminance for a long period of time.Type: GrantFiled: December 15, 2000Date of Patent: August 19, 2003Assignee: Nichia Kagaku Kogyo Kabushiki KaishaInventors: Yoshinori Shimizu, Kensho Sakano, Yasunobu Noguchi, Toshio Moriguchi
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Publication number: 20010001207Abstract: The white light emitting diode comprising a light emitting component using a semiconductor as a light emitting layer and a phosphor which absorbs a part of light emitted by the light emitting component and emits light of wavelength different from that of the absorbed light, wherein the light emitting layer of the light emitting component is a nitride compound semiconductor and the phosphor contains garnet fluorescent material activated with cerium which contains at least one element selected from the group consisting of Y, Lu, Sc, La, Gd and Sm, and at least one element selected from the group consisting of Al, Ga and In and, and is subject to less deterioration of emission characteristic even when used with high luminance for a long period of time.Type: ApplicationFiled: December 15, 2000Publication date: May 17, 2001Applicant: Nichia Kagaku Kogyo Kabushiki KaishaInventors: Yoshinori Shimizu, Kensho Sakano, Yasunobu Noguchi, Toshio Moriguchi
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Patent number: 6069440Abstract: The white light emitting diode comprising a light emitting component using a semiconductor as a light emitting layer and a phosphor which absorbs a part of light emitted by the light emitting component and emits light of wavelength different from that of the absorbed light, wherein the light emitting layer of the light emitting component is a nitride compound semiconductor and the phosphor contains garnet fluorescent material activated with cerium which contains at least one element selected from the group consisting of Y, Lu, Sc, La, Gd and Sm, and at least one element selected from the group consisting of Al, Ga and In and, and is subject to less deterioration of emission characteristic even when used with high luminance for a long period of time.Type: GrantFiled: April 28, 1999Date of Patent: May 30, 2000Assignee: Nichia Kagaku Kogyo Kabushiki KaishaInventors: Yoshinori Shimizu, Kensho Sakano, Yasunobu Noguchi, Toshio Moriguchi
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Patent number: 5998925Abstract: The white light emitting diode comprising a light emitting component using a semiconductor as a light emitting layer and a phosphor which absorbs a part of light emitted by the light emitting component and emits light of wavelength different from that of the absorbed light, wherein the light emitting layer of the light emitting component is a nitride compound semiconductor and the phosphor contains garnet fluorescent material activated with cerium which contains at least one element selected from the group consisting of Y, Lu, Sc, La, Gd and Sm, and at least one element selected from the group consisting of Al, Ga and In and, and is subject to less deterioration of emission characteristic even when used with high luminance for a long period of time.Type: GrantFiled: July 29, 1997Date of Patent: December 7, 1999Assignee: Nichia Kagaku Kogyo Kabushiki KaishaInventors: Yoshinori Shimizu, Kensho Sakano, Yasunobu Noguchi, Toshio Moriguchi