Abstract: A waveguide type power combining/dividing unit W includes a plurality of rectangular waveguides 1 for TE10 mode disposed in a radial pattern, a circular waveguide 2 for TM01 mode disposed at a center of the radial pattern, in which one ends of the plurality of the rectangular waveguides 1 are connected to a side surface of one end of the circular waveguide.

Abstract: A power combiner/divider W1 which includes: a body portion in which a cavity is formed; a center coaxial connector which is formed on an approximately center portion of the body portion; a plurality of peripheral coaxial connectors 14 which are arranged concentrically about the center coaxial connector 11 and are formed on the body portion; a radial line which is formed in the cavity formed in the body portion; a center coaxial line which has one end thereof connected to the center coaxial connector and the other end thereof connected to a center portion of the radial line; and a peripheral coaxial line which has one end thereof connected to the peripheral coaxial connector and the other end thereof connected to an outer peripheral portion of the radial line, an impedance conversion part is provided to the radial line in one or plural stages.

Abstract: A power combiner/divider W1 which includes: a body portion in which a cavity is formed; a center coaxial connector which is formed on an approximately center portion of the body portion; a plurality of peripheral coaxial connectors 14 which are arranged concentrically about the center coaxial connector 11 and are formed on the body portion; a radial line which is formed in the cavity formed in the body portion; a center coaxial line which has one end thereof connected to the center coaxial connector and the other end thereof connected to a center portion of the radial line; and a peripheral coaxial line which has one end thereof connected to the peripheral coaxial connector and the other end thereof connected to an outer peripheral portion of the radial line, an impedance conversion part is provided to the radial line in one or plural stages.

Abstract: In a ferrite phase shifter, a temperature rise at ferrites can be suppressed to maintain the characteristics of the frites even when used at high power. Thus, the phase shifter can stably demonstrate high performance. The ferrite phase shifter includes a rectangular waveguide, substantially sheet-like ferrites disposed to face each other with respective mounting surfaces kept in tight contact with inner walls of wide surfaces of the rectangular waveguide facing each other, and a coil which is wound around the periphery of the rectangular waveguide in a position substantially corresponding to the position of the ferrites and through which a current is passed.

Abstract: In a ferrite phase shifter, a temperature rise at ferrites can be suppressed to maintain the characteristics of the frites even when used at high power. Thus, the phase shifter can stably demonstrate high performance. The ferrite phase shifter includes a rectangular waveguide, substantially sheet-like ferrites disposed to face each other with respective mounting surfaces kept in tight contact with inner walls of wide surfaces of the rectangular waveguide facing each other, and a coil which is wound around the periphery of the rectangular waveguide in a position substantially corresponding to the position of the ferrites and through which a current is passed.

Abstract: In a ferrite phase shifter, a temperature rise at ferrites can be suppressed to maintain the characteristics of the frites even when used at high power. Thus, the phase shifter can stably demonstrate high performance. The ferrite phase shifter includes a rectangular waveguide, substantially sheet-like ferrites disposed to face each other with respective mounting surfaces kept in tight contact with inner walls of wide surfaces of the rectangular waveguide facing each other, and a coil which is wound around the periphery of the rectangular waveguide in a position substantially corresponding to the position of the ferrites and through which a current is passed.

Abstract: A magnetron (2), a launcher (4) which extracts the output power of the magnetron (2), an impedance generator (5) having one terminal connected to the output terminal of the launcher (4), and a reference signal supplier (6) connected to the other terminal of the impedance generator (5) are included. The reference signal supplier (6) supplies, to the magnetron (2), a reference signal lower in electric power and stabler in frequency than the output from the magnetron (2). The oscillation frequency of the magnetron (2) is locked to the frequency of the reference signal by injection of the reference signal. The impedance generator (5) can reduce the change width of the oscillation frequency of the magnetron (2) by adjusting the load impedance of the magnetron (2). This implements a magnetron oscillator (1) which has high frequency stability and does not fluctuate the frequency even when the output power is changed.

Abstract: In a ferrite phase shifter, a temperature rise at ferrites can be suppressed to maintain the characteristics of the frites even when used at high power. Thus, the phase shifter can stably demonstrate high performance. The ferrite phase shifter includes a rectangular waveguide, substantially sheet-like ferrites disposed to face each other with respective mounting surfaces kept in tight contact with inner walls of wide surfaces of the rectangular waveguide facing each other, and a coil which is wound around the periphery of the rectangular waveguide in a position substantially corresponding to the position of the ferrites and through which a current is passed.

Abstract: A plasma processor includes a table on which a target object is to be placed, a vessel which accommodates the table and in which a plasma is to be generated by a high-frequency electromagnetic field, a high-frequency oscillator (30) which generates a high-frequency electromagnetic field, and a reference oscillator (34) which is lower in output power than the high-frequency oscillator (30) and stable in oscillation frequency. A reference signal generated by the reference oscillator (34) is injected into the high-frequency oscillator (30) to fix an oscillation frequency of the high-frequency oscillator (30) at a frequency of a reference signal. Therefore, accurate load matching is performed to improve an energy efficiency when an automatic matching device provided between the high-frequency oscillator (30) and vessel is designed based on the frequency of the reference signal.

Abstract: A magnetron oscillating apparatus includes a magnetron, power supply unit, and switch circuit. The magnetron oscillates a microwave. The power supply unit applies a power to the magnetron. The switch circuit is connected between the power supply unit and the cathode of the magnetron and turned on/off on the basis of a control signal. When the switch circuit is turned on by the control signal, a voltage is applied between the cathode and the grounded anode of the magnetron to cause the magnetron to pulse-oscillate.

Abstract: A plasma processing apparatus that generates a uniform plasma, thus allowing uniform processing of large-diameter wafers. The cylindrical apparatus includes a wafer mounting table, a silica plate providing an airtight seal, a microwave supplier for propagating a microwave in TE11-mode, and a cylindrical waveguide connected at one end to the microwave supplier. A radial waveguide box is connected between the other end of the cylindrical waveguide and the silica plate. The radial waveguide box extends radially outward from the cylindrical waveguide, forming a flange and defining an interior waveguide space. A disc-shaped slot antenna is located at the lower end of the radial waveguide box, above the silica plate. A circularly-polarized wave converter disposed in the cylindrical waveguide rotates the TE11-mode microwave about the axis of the cylindrical waveguide, and sends the rotating microwave to the radial waveguide box.

Abstract: A plasma processing apparatus that generates a uniform plasma, thus allowing uniform processing of large-diameter wafers. The cylindrical apparatus includes a wafer mounting table, a silica plate providing an airtight seal, a microwave supplier for propagating a microwave in TE11 mode, and a cylindrical waveguide connected at one end to the microwave supplier. A radial waveguide box is connected between the other end of the cylindrical waveguide and the silica plate. The radial waveguide box extends radially outward from the cylindrical waveguide, forming a flange and defining an interior waveguide space. A disc-shaped slot antenna is located at the lower end of the radial waveguide box, above the silica plate. A circularly-polarized wave converter disposed in the cylindrical waveguide rotates the TE11-mode microwave about the axis of the cylindrical waveguide, and sends the rotating microwave to the radial waveguide box.

Abstract: To uniformly generate plasma using microwaves in a processing vessel. To first to fourth feeding sections 141a to 141d which are evenly placed on the same plane perpendicular to an axial direction of a main coaxial line 123, four microwaves shifted in phase by 0°, 90°, 180°, and 270° are fed from first to fourth microwave supply sections 142a to 142d.

Abstract: This invention discloses a plasma processing apparatus for carrying out a process onto a substrate utilizing a plasma generated by supplying RF energy with a plasma generation gas. This apparatus comprises a vacuum chamber having a pumping system, a substrate holder for placing the substrate to be processed in the vacuum chamber, a gas introduction means for introducing the plasma generation gas into a plasma generation space, an energy supply means for supplying the RF energy with the plasma generation gas. The antenna has multiple antenna elements provided symmetrically to the center on the axis of the substrate and an end shorting member shorting each end of the antenna elements so that an RF current path symmetrical to the center is applied. Multiple circuits resonant at a frequency of the RF energy are formed symmetrically of the antenna elements and the end shorting member.

Abstract: The plasma generator includes a plasma generation chamber which is pumped and into which plasma generation gas is introduced. An antenna provided outside the plasma generation chamber, a RF source supplying a RF power with the antenna to excite the antenna. A part or whole of the plasma generation chamber is made of dielectric. The antenna radiates the RF through the dielectric and includes an antenna element which longitudinal direction is vertical to the direction for the plasma. The plasma generation chamber has a side wall intersecting the longitudinal direction of the antenna element at both sides. A part or whole of a plasma generation chamber is made of dielectric having relative permittivity .epsilon..sub.S. The antenna radiates a RF through the dielectric and is comprised of multiple antenna elements which longitudinal directions are on a plane vertical to the direction for the plasma.

Abstract: An ECR type plasma processing apparatus including an airtight processing chamber and a work table for supporting a semiconductor wafer thereon disposed in the processing chamber. The interior of the processing chamber is exhausted to a vacuum by an exhaust system and an active gas such as CF.sub.4 gas and an inert gas such as Ar gas are supplied into the processing chamber through nozzles. Further, a magnet is disposed around the processing chamber to generate a magnetic field perpendicular to the upper surface of the wafer and a microwave transmitting window is disposed in the ceiling of the processing chamber. Also, a microwave generated by a microwave generator is introduced into the transmitting window through a rectangular waveguide, a mode converter, and a tapered waveguide. The microwave is transmitted through the rectangular waveguide in the TE.sub.10 mode, is converted into a hybrid wave of two mode waves, i.e., a TM.sub.01 -mode wave and a TE.sub.

Abstract: A plasma processing apparatus comprises a plasma chamber having a gas inlet opening and a gas outlet opening. A first high-frequency energy source supplies accelerating energy to a holder that supports a semiconductor specimen within the chamber to produce a high-frequency accelerating electric field. Gas is introduced to the chamber through the inlet opening and accelerated by the electric field toward the specimen. An antenna structure is connected to a second high-frequency energy source which supplies exciting energy at a frequency in the range between 100 MHz and 1 GHz which is higher than the frequency of the accelerating energy. The antenna structure has radially outwardly extending, circumferentially equally spaced apart elements of length equal to the quarter wavelength of the exciting energy so that there is a phase difference of 180 degrees between adjacent ones of the antenna elements. The accelerated gas is uniformly excited and converted to high-density plasma.

Abstract: An automatic load-matching circuit for microwaves, disposed on a transmission line between a signal source and a load. Signal detection means for detecting a travelling wave component and a reflected wave component and for producing outputs corresponding to the absolute value of reflection coefficient .GAMMA., the cosine products .vertline..GAMMA..vertline. cos .theta., and the sine product .vertline..GAMMA..vertline. sin .theta. for controlling an automatic matching means, which includes three matching elements, each having an adjustable short-circuit length, disposed on the transmission line with a separation of odd number multiples of 1/8 of a wavelength along the transmission line. The first and third matching elements are connected such that in response to a change in the short-circulating length of one of the first and third matching elements, the short-circuiting length of the other of the first and third matching elements changes in a corresponding opposite manner.