Abstract: Components of apparatus for film making and method for manufacturing the same include components made from aluminum alloy or aluminum without or with uneven surface of unevenness size of up to several mm, which are immersed in any one of sulfuric acid, phosphoric acid, oxalic acid, and chromic acid, and then washed and dried. Such components prevent the deposit of film forming materials on the components form peeling off during film making operation.

Abstract: A body coated with cubic boron nitride is disclosed which includes a base material, a first interlayer formed on the base material, a second interlayer formed on the first interlayer, a third interlayer formed on the second interlayer, and a cubic boron nitride film formed on the third interlayer. Each of the first and second interlayers comprises nitride or boride mixed with an adding element chosen from the IVb, IIIb, Vb, IVa, Va and VIa groups of the periodic table. In one embodiment of the invention, the composition ratio of the adding element to the nitride or boride decreases towards the surface between the second interlayer and the third interlayer. The third interlayer also contains nitride or boride mixed with an adding element chosen from the IVb, IIIb, Vb, IVa, Va and VIa groups of the periodic table. In one embodiment of the invention, the total mixing amount of the adding element in the third interlayer is 0.01 atomic % to 10 atomic %, and shows an absorption peak at the wave number of 950 cm.

Abstract: A wafer, in which at least one via hole is made in an insulating film formed on the substrate, and a first metallic film is formed in the via hole is prepared. The wafer is held in a wafer holder in a reaction chamber under reduced pressure. WF.sub.6 gas and H.sub.2 gas are introduced into the chamber and light from a heating lamp is directed onto the wafer, such that a difference in temperature is created between the insulating film and the first metallic film such that a second metallic film of W is formed only on the first metallic film in the chemical vapor deposition process. The temperature difference is due to the differences of the adsorption ratios of infrared light of the insulating film, the substrate and the first metallic film. The WF.sub.6 gas and H.sub.2 gas are made to flow in flat or sheet form substantially parallel to the surface of the wafer, and in inernt gas, such as Ar, is made to flow toward the surface of the wafer to control the flow of WF.sub.6 and H.sub.2 gas.

Abstract: An apparatus for forming a reactive deposition film includes a member for supporting a body to be coated in a vacuum chamber; an evaporation source of element constituting the reactive deposition film; apparatus for introducing a reaction gas into the vacuum chamber; bias apparatus for applying a high frequency or radio frequency (rf) bias voltage to the body; an electron beam generator for supplying electron beams towards the body; and a magnetic field generator which generates such a magnetic field that distributes the electron beams supplied from the electron beam generator uniformly to the whole region adjacent to the surface of the body and traps electrons from the electron beams in the region, whereby plasma of high density can be formed uniformly in the whole region adjacent to the surface of the body.

Abstract: In a vacuum brazing apparatus in which articles provided with brazing material are heated to be brazed with each other in a vacuum chamber, no heating means for brazing are arranged in the inside of the vacuum chamber, and heating means are so arranged outside of the vacuum chamber as to heat the vacuum chamber.

Abstract: A method or joining ceramics comprising the steps: of preparing a ceramics body and another body to be connected with the ceramics body; of interposing a layer of ultra-fine particles having smaller size than the surface roughnesses of the contact surfaces of the ceramics body and the other body, the layer having larger thickness than the surface roughnesses, and the ultra-fine particles being reactive with the ceramics body and the other body and forming a reaction produce which has a strong bonding power to the ceramics body and the other body; and then of pressing and heating the piled composition of the ceramics body, other body and layer.