Abstract: A method of manufacturing metal silicide targets or alloy targets for sputtering use comprises the steps of (a) mechanically alloying silicon and a metal to provide a metal silicide powder or mechanically alloying silicon and a plurality of metal powders to provide an alloy powder, (b) and then pressing the metal silicide powder or alloy powder. The invention also relates to the metal silicide targets or alloy targets so manufactured. In the mechanical alloying step, rapid and fine division and agglomeration of the mixed powder is repeated until the particles of the material powders are finely divided to a submicron level. They form aggregates tens of microns in diameter. The aggregates gradually take an equi-axed shape. Homogenization of the material powder mixture progresses to mixing on the atomic level, until alloying takes place.

Abstract: A method of fabricating a Schottky electrode by the adsorption of thin layer with not more than 10 monolayers of a metal whose oxide is stable on a III-V compound semiconductor substrate such as InP or on a substrate, the surface on which epitaxial layer is grown, and the successive oxidation of the thin metal film is disclosed. Since the generation of dangling bonds at the interface due to the elastic strain between the substrate and the metal oxide can be prevented, it becomes possible to obtain a Schottky electrode with a high Schottky barrier height and thus to fabricate MESFETs and Schottky diodes having good characteristics such as a small reverse leak current and a large break-down voltage.

Abstract: A surface acoustic wave device comprises lithium tetraborate single crystal substrate to make use of surface acoustic waves with higher propagation velocities and smaller propagation losses, whereby frequencies to be signal-processed can be as high as above 1 GHz. The surface acoustic wave device comprises a metal film formed on a surface of a lithium tetraborate single crystal substrate, the metal film being for exciting, receiving, reflecting and/or propagating surface acoustic waves, the metal film being so formed that a cut angle of the substrate, and a propagation direction of the surface acoustic waves are in an Eulerian angle representation of (39.degree.-51.degree., 66.degree.-114.degree., -20.degree.-20.degree.) and directions equivalent thereto. In this propagation direction few Rayleigh waves exit, and only surface acoustic waves of high propagation velocity are generated. Propagation losses can be eliminated.