Abstract: A method of producing a higher purity metal comprising the step of electrolyzing a coarse metal material by a primary electrolysis to obtain a primary electrodeposited metal, the step of electrolyzing the material with the primary electrodeposited metal obtained in the primary electrolysis step used as an anode to obtain a higher purity electrolyte for secondary electrolysis, and the step of further performing secondary electrolysis by employing higher purity electrolytic solution than said electrolytic solution with said primary electrodeposited metal as an anode, whereby providing an electro-refining method that effectively uses electrodes and an electrolyte produced in a plurality of electro-refining steps, reuses the flow of an electrolyte in the system, reduces organic matter-caused oxygen content, and can effectively produce a high purity metal.

Abstract: A sputtering target having a sprayed coating at least on the side face thereof and producing few particles. The deposit produced on the side face of the sputtering target is prevented from separating and flying.

Abstract: The present invention relates to high-purity zirconium or hafnium with minimal impurities, particularly where the content of alkali metal elements such as Na, K; radioactive elements such as U, Th; transitional metals or heavy metals or high melting point metal elements such as Fe, Ni, Co, Cr, Cu, Mo, Ta, V; and gas components such as C, O, etc. is extremely reduced, as well as to an inexpensive manufacturing method of such high-purity zirconium or hafnium, thereby reducing the impurities hindering the guarantee of the operational performance of semiconductors. The present invention further relates to an inexpensive and safe manufacturing method of high-purity zirconium or hafnium powder from hydrogenated high-purity zirconium or hafnium powder.

Abstract: A sputtering target producing few particles, a backing plate or a sputtering apparatus, and a sputtering method producing few particles. An arc-spraying coating film and a plasma-spraying coating film over the former are formed on the sputtering target, a backing plate, or another surface in the sputtering apparatus, where an unwanted film might be formed. Thus a deposit is prevent from separating/flying from the target, backing plate, or another surface where an unwanted film might be formed in the sputtering apparatus.

Abstract: A MoSi2 arc-shaped heater formed in a continuous waveform, characterized in that U-shaped heater members having parallel parts are connected alternately to each other at the end parts, and the parallel faces of the U-shaped heater members have an angle relative to each other and an arc-shaped face with a specified curvature in a connecting direction, wherein a large number of parallel U-shaped heater members having heating parts are connected to each other and welded so that the heater can have a generally arc-shaped curved surface to install the heater onto the inner wall of a heating furnace, whereby the arc heater having an excellent joining strength and capable of being manufactured stably, and a method and a device for manufactured the heater can be provided.

Abstract: The present invention relates to an oxide sintered body having a perovskite structure represented with a chemical formula of MRuO3 (M: one or more types among Ca, Sr, Ba), characterized in that the total content of alkali metals such as Na, K, and Fe, Ni, Co, Cr, Cu, Al is 100 ppm or less, the content of respective elements U, Th is 10 ppb or less, and the relative density is 90% or more, and provides an oxide sintered body and the manufacturing method thereof having a pervoskite structure represented with the chemical formula MRuO3 (M: one or more types among Ca, Sr, Ba) by using a MRuO3 sintered body raw material refined to a high density of 4N or more, which enables sintering at low temperatures, and which is capable of obtaining a high-density sintered body.

Abstract: There is provided a copper clad laminate which makes laser beam drilling extremely easy and is suitable for forming an interlayer connection microhole by improving a surface of its copper foil, which is to be used as the surface which a laser beam enters, in the production of printed circuit boards. Specifically, the copper clad laminate is such that it includes electrodeposited copper foil for use in the laser beam drilling and is characterized in that the matte side of the above electrodeposited copper foil is used as the surface which the laser beam enters.

Abstract: The present invention relates to a diffusion bonding target assembly of a high purity cobalt target and a copper alloy backing plate diffusion bonded with an aluminum or aluminum alloy having a thickness of 0.5 mm or more as the insert material. Provided is a diffusion bonding target assembly of a high-purity cobalt target and a copper alloy backing plate capable of effectively sputtering a high purity cobalt ferromagnetic target and which does not generate warping or peeling upon diffusion bonding even under severe conditions such as bonding with the backing plate and high power sputtering, and the manufacturing method thereof.

Abstract: A tantalum or tungsten target-backing plate assembly which comprises a tantalum or tungsten target and a copper alloy backing plate that are subject to diffusion bonding via an aluminum- or aluminum alloy-sheet insert material at least 0.5 mm thick, and which is provided with diffusion bonded interfaces between the respective materials, wherein the assembly suffers only a small deformation after diffusion bonding and is free from separation between the target and the backing plate or from cracking even when the target material and the backing plate differ greatly in thermal expansion, and can survive high power sputtering; and a production method therefor.

Abstract: A titanium sputtering target that contains a concentration of oxygen in an amount of 20 ppm or less and has a maximum grain diameter of 20 &mgr;m or less. The target permits a sputtering operation to be accomplished substantially free from the formation of particles or the occurrence of an abnormal discharge phenomenon. In addition, the target contains a reduced amount of contaminants and is soft.

Abstract: The present invention relates to a non-brittle silicide target for forming a gate oxide film made of MSi0.8-1.2 (M: Zr, Hf), and provides a non-brittle silicide target suitable for forming a ZrO2.SiO2 film or HfO2.SiO2 film that can be used as a high dielectric gate insulating film having properties to substitute an SiO2 film.

Abstract: A copper foil with excellent laser drilling property, having a layer containing any one or more substances selected from indium, tin, cobalt, zinc, cobalt alloys, and nickel alloys on the face of the copper foil to be radiated with laser beams. A copper foil easy to be laser-processed and suitable for forming through hole and via hole with a small diameter at the time of manufacturing a printed circuit board and a method for manufacturing such a copper foil are achieved by improving the surface of a copper foil.

Abstract: A tungsten powder having a powder specific surface of 0.4 m2/g or more is hot-pressed at a temperature of 1,600° C. or more and then subjected to HIP at a temperature of 1,700° C. or more without capsuling, whereby a tungsten target for sputtering is manufactured that has a relative density of 99% or more and an average crystal grain size of 100 &mgr;m or less. This manufacturing method can manufacture, stably at a low cost, a tungsten target having such a high density and fine crystal structure as cannot be attained by the conventional pressure sintering method, and can greatly decrease the number of particle defects on a film produced by using such a target.

Abstract: In filling fine via holes or trenches of the wiring (LSI) pattern formed on a semiconductor wafer, a copper electroplating is carried out by using a copper electroplating solution. containing an azole or a silane coupling agent, or a copper electroplating is carried out after the immersion into a pretreatment solution containing an azole or a silane coupling agent. As illustratively shown above, the addition of a component having the action to inhibit the dissolution of copper to an electroplating solution or the pretreatment by a solution containing a component having the action to inhibit the dissolution of copper can inhibit the dissolution of a copper seed layer covering poorly, and thus can prevent the occurrence of defects such as voids and seams.

Abstract: To provide an optically transparent film containing 0.01 to 20% by weight glass forming oxide consisting of Nb2O5, V2O5, B2O3, SiO2, and P2O6; 0.01 to 20% by weight Al2O3 or Ga2O3; and 0.01 to 5% by weight hard oxide of ZrO2 and TiO2 as required; balance being ZnO, and a sputtering target for forming such a film. This sputtering target reduces occurrence of particles during sputtering, decreases the number of interruption or discontinuance of sputtering to improve production efficiency, and forms a protective film for optical disks with large transmittance and low reflectance.

Abstract: A cathode material for a lithium secondary battery having a high capacity, an excellent cycle property, and an excellent thermal stability. The cathode material for the lithium secondary battery is a layered compound having a general formula: LixNi1-a-b-c-dCOaM1bM2cM3dO2, wherein M1, M2, M3 are selected from Ti, Mg, B and Al and wherein the characters x, a, b, c and d respectively satisfy 1.0≦x≦1.2; 0.3≦a≦0.3; 0.005≦b≦0.1; 0.005≦c≦0.1; 0.005≦d≦0.1; and 0.115≦a+b+c+d≦0.

Abstract: The present invention relates to a sputtering target characterized in that a part of the direction or the tangential direction of grinding the top surface or the both surfaces of the target is parallel to, or within an angle range of ±45 degrees to the warping direction of the target after bonding the target to the backing plate; and when the target is rectangular, the present invention relates to a sputtering target characterized in that the target is rectangular, and a part of the direction or the tangential direction of grinding the top surface or the both surfaces of the target is within a range of angles of the warping direction after bonding the target to the backing plate to the diagonal of the target.

Abstract: To establish a technique of further improving the oxidation resistance of the glossy surface of a copper foil that has a composite layer containing chromium, zinc, and phosphorus on its glossy surface is achieved by a copper foil having excellent oxidation resistance characterized by a composite layer containing chromium, zinc, phosphorus, and nickel formed on the glossy surface of the foil and also to a method of manufacturing the same by electrolysis.

Abstract: A sputtering target is provided which provides early stabilization of the film-deposition rate of the sputtering target from its initial stage of use. The sputtering target surface subjected to erosion is formed with a surface-deformed layer. The surface-deformed layer is reduced by precision machining and removed by etching. The extent of etching is controlled so that the surface roughness (Ra) is in a range between 0.1% and 10% of the mean crystal grain diameter of the material constituting the target. The surface roughness (Ra) is defined as the mean roughness on the center line of the surface.

Abstract: A mixed metallurgical powder is provided containing powdered copper used for the manufacture of sintered structural parts such as brushes. A sintered compact made of the mixed metallurgical powder and a method for the manufacture of the sintered compact are also provided. The powder and the sintered compact are provide with an extremely high corrosion resistance because, preferably, the mixed metallurgical powder contains powdered copper and 20-400 ppm by weight of Bi in the form of powdered Bi.