Abstract: A modeling technique is provided. The modeling technique includes inputting tool parameters into a model and inputting basic model parameters into the model. The technique further includes generating a simulated, corrected reticle design using the tool parameters and the basic model parameters. An image of test patterns is compared against the simulated, corrected reticle design. A determination is made as to whether ?1<?1, wherein ?1 represents model vs. exposure difference and ?1 represents predetermined criteria. The technique further includes completing the model when ?1<?1.

Abstract: A method for predicting pattern critical dimensions in a lithographic exposure process includes defining relationships between critical dimension, defocus, and dose. The method also includes performing at least one exposure run in creating a pattern on a wafer. The method also includes creating a dose map. The method also includes creating a defocus map. The method also includes predicting pattern critical dimensions based on the relationships, the dose map, and the defocus map.

Abstract: A modeling technique is provided. The modeling technique includes inputting tool parameters into a model and inputting basic model parameters into the model. The technique further includes generating a simulated, corrected reticle design using the tool parameters and the basic model parameters. An image of test patterns is compared against the simulated, corrected reticle design. A determination is made as to whether ?1<?1, wherein ?1 represents model vs. exposure difference and ?1 represents predetermined criteria. The technique further includes completing the model when ?1<?1.

Abstract: A method for predicting pattern critical dimensions in a lithographic exposure process includes defining relationships between critical dimension, defocus, and dose. The method also includes performing at least one exposure run in creating a pattern on a wafer. The method also includes creating a dose map. The method also includes creating a defocus map. The method also includes predicting pattern critical dimensions based on the relationships, the dose map, and the defocus map.

Abstract: A method for predicting pattern critical dimensions in a lithographic exposure process includes defining relationships between critical dimension, defocus, and dose. The method also includes performing at least one exposure run in creating a pattern on a wafer. The method also includes creating a dose map. The method also includes creating a defocus map. The method also includes predicting pattern critical dimensions based on the relationships, the dose map, and the defocus map.

Abstract: A modeling technique is provided. The modeling technique includes inputting tool parameters into a model and inputting basic model parameters into the model. The technique further includes generating a simulated, corrected reticle design using the tool parameters and the basic model parameters. An image of test patterns is compared against the simulated, corrected reticle design. A determination is made as to whether ?1<?1, wherein ?1 represents model vs. exposure difference and ?1 represents predetermined criteria. The technique further includes completing the model when ?1<?1.

Abstract: A system and methods are provide for modeling the behavior of a lithographic scanner and, more particularly, a system and methods are provide using thresholds of an image profile to characterize through-pitch printing behavior of a lithographic scanner. The method includes running a lithographic model for a target tool and running a lithographic model on the matching tool for a plurality of different settings using lens numerical aperture, numerical aperture of the illuminator and annular ratio of a pattern which is produced by an illuminator. The method then selects the setting that most closely matches the output of the target tool.

Abstract: A method for matching a first OPE curve (700) for a first exposure apparatus (10A) used to transfer an image to a wafer (28) to a second OPE curve (702) of a second exposure apparatus (10B). The method can include the step of adjusting a tilt of a wafer stage (50) that retains the wafer to adjust the first OPE curve. As provided herein, the first exposure apparatus (10A) has the first OPE curve (700) because of the design of the components used in the first exposure apparatus (10A), and the second exposure apparatus (10B) has a second OPE curve (702) because of the design of the components used in the second exposure apparatus (10B). Further, the tilt of the wafer stage (50) can be selectively adjusted until the first OPE curve (700) approximately matches the second OPE curve (702). With this design, the two exposure apparatuses (10A) (10B) can be used for the same lithographic process.

Abstract: A modeling technique is provided. The modeling technique includes inputting tool parameters into a model and inputting basic model parameters into the model. The technique further includes generating a simulated, corrected reticle design using the tool parameters and the basic model parameters. An image of test patterns for an integrated circuit is compared against the simulated, corrected reticle design. A determination is made as to whether a difference between the simulated, corrected reticle design and exposure results of the image of the test patterns (?1) is less than a predetermined criteria (?1). The technique further includes completing the model the difference between the simulated, corrected reticle design and the exposure results of the image of the test patterns is less than the predetermined criteria.

Abstract: A method for predicting pattern critical dimensions in a lithographic exposure process includes defining relationships between critical dimension, defocus, and dose. The method also includes performing at least one exposure run in creating a pattern on a wafer. The method also includes creating a dose map. The method also includes creating a defocus map. The method also includes predicting pattern critical dimensions based on the relationships, the dose map, and the defocus map.

Abstract: An automated signature detection system and method of use and, more particularly, a predictive modeling component configured to accurately predict maintenance events for optical elements used in lithographic tools. The system comprises at least one module configured to analyze data associated with power illumination at a surface. The at least one module also is configured to fit a curve to the analyzed data using an exponentially based decay model.

Abstract: A method for matching a first OPE curve (700) for a first exposure apparatus (10A) used to transfer an image to a wafer (28) to a second OPE curve (702) of a second exposure apparatus (10B). The method can include the step of adjusting a tilt of a wafer stage (50) that retains the wafer to adjust the first OPE curve. As provided herein, the first exposure apparatus (10A) has the first OPE curve (700) because of the design of the components used in the first exposure apparatus (10A), and the second exposure apparatus (10B) has a second OPE curve (702) because of the design of the components used in the second exposure apparatus (10B). Further, the tilt of the wafer stage (50) can be selectively adjusted until the first OPE curve (700) approximately matches the second OPE curve (702). With this design, the two exposure apparatuses (10A) (10B) can be used for the same lithographic process.

Abstract: A system and methods are provide for modeling the behavior of a lithographic scanner and, more particularly, a system and methods are provide using thresholds of an image profile to characterize through-pitch printing behavior of a lithographic scanner. The method includes running a lithographic model for a target tool and running a lithographic model on the matching tool for a plurality of different settings using lens numerical aperture, numerical aperture of the illuminator and annular ratio of a pattern which is produced by an illuminator. The method then selects the setting that most closely matches the output of the target tool.

Abstract: A modeling technique is provided. The modeling technique includes inputting tool parameters into a model and inputting basic model parameters into the model. The technique further includes generating a simulated, corrected reticle design using the tool parameters and the basic model parameters. An image of test patterns is compared against the simulated, corrected reticle design. A determination is made as to whether ?1<?-1, wherein ?1 represents model vs. exposure difference and ?-1 represents predetermined criteria. The technique further includes completing the model when ?1<?-1.

Abstract: An automated signature detection system and method of use and, more particularly, a predictive modeling component configured to accurately predict maintenance events for optical elements used in lithographic tools. The system comprises at least one module configured to analyze data associated with power illumination at a surface. The at least one module also is configured to fit a curve to the analyzed data using an exponentially based decay model.

Abstract: Methods and apparatus for controlling a material removal rate at an edge of a wafer during a chemical mechanical polishing (CMP) process are disclosed. According to one aspect of the present invention, a CMP apparatus includes a wafer, a polishing pad to polish a surface of the wafer, a polishing pad structure to rotate the polishing pad over the surface of the wafer, and a wafer chuck to support the wafer. The wafer chuck directly supports a first portion of the wafer that is in physical contact with the wafer chuck and indirectly supports a second portion of the wafer that is not in physical contact with the wafer chuck. The second portion of the wafer is supported by the wafer chuck using a bearing surface arranged between the second portion of the wafer and the wafer chuck.

Abstract: Methods and apparatus for substantially continuously measuring the surface of a wafer during a polishing process are disclosed. According to one aspect of the present invention, an apparatus includes a wafer support table that supports a wafer, a polishing pad that polishes a surface of the wafer, and a polishing pad structure that rotates the polishing pad over the surface of the wafer. The apparatus also includes a measuring device which is capable of continuously measuring the surface of the wafer during polishing of the surface of the wafer.

Abstract: Methods for using critical dimension test marks (test marks) for the rapid determination of the best focus position of lithographic processing equipment and critical dimension measurement analysis across a wafer's surface are described. In a first embodiment, a plurality of test mark arrays are distributed across the surface of a wafer, a different plurality being created at a plurality of focus positions. Measurement of the length or area of the resultant test marks allows for the determination of the best focus position of the processing equipment. Critical dimension measurements at multiple points on a wafer with test marks allow for the determination of process accuracy and repeatability and further allows for the real-time detection of process degradation. Using test marks which require only a relatively simple optical scanner and sensor to measure their length or area, it is possible to measure hundreds of measurement values across a wafer in thirty minutes.

Abstract: A test mark, as well as methods for forming and using the test mark to facilitate the measurement of the critical dimensions of etched features in semiconductor and other wafer level processing is described. The test marks may be used to characterize, calibrate and/or monitor etch performance. Test marks are defined by imaging (typically at partial exposures) overlapping, angularly offset lines in a resist that covers a layer to be etched. The lines preferably have line widths that are equal (or related) to a critical dimension of interest. After the resist is developed and otherwise processed, the layer is etched as appropriate, thereby creating the test marks. The test marks are then imaged to facilitate the determination of a geometric parameter of each mark. Most commonly, the geometric parameter determined relates to the area of the mark and/or the length of its major dimension.

Abstract: Methods and apparatus for enabling both isolated and dense patterns to be accurately patterned onto a wafer are disclosed. According to one aspect of the present invention, an illumination system that is suitable for use as a part of a projection tool includes an illumination source and an illuminator aperture. The illuminator aperture has a center point and an outer edge, and also includes a first pole and a second pole. The first pole is defined substantially about the center point, and the second pole is defined substantially between the first pole and the outer edge of the first pole. The illumination source is arranged to provide a beam to the illuminator aperture.