Patents Assigned to NINGBO ADVANCED MEMORY TECHNOLOGY CORP.
  • Method for fabricating phase change memory device
    Patent number: 9525132
    Abstract: A method for fabricating a phase change memory device uses the well-developed semiconductor process to fabricate a larger-size sacrifice beforehand, and next uses a wet etching technology to form a narrowed sacrifice layer having a smaller size, and then removes the narrowed sacrifice layer to form the desired mask pattern, whereby the method can precisely define and easily adjust a smaller-size heater and have a stable fabrication process.
    Type: Grant
    Filed: March 18, 2016
    Date of Patent: December 20, 2016
    Assignees: NINGBO ADVANCED MEMORY TECHNOLOGY CORP., BEING ADVANCED MEMORY TAIWAN LIMITED
    Inventor: Shui-Chin Su
  • Non-volatile storage unit and non-volatile storage device
    Patent number: 9362337
    Abstract: A non-volatile storage device adopt memristors to store data and uses fewer transistors to realize the same circuit function, whereby to decrease the chip area and reduce the time and energy spent in initiating the device. Further, the non-volatile storage device disposes appropriate electronic elements in the spacing between adjacent memristors to meet the layout design rule and achieve high space efficiency in the chip lest the space between memristors be wasted.
    Type: Grant
    Filed: September 24, 2015
    Date of Patent: June 7, 2016
    Assignees: NINGBO ADVANCED MEMORY TECHNOLOGY CORP., BEING ADVANCED MEMORY TAIWAN LIMITED
    Inventors: Jui-Jen Wu, Jiah-Wang Chang, Sheng-Tsai Huang, Fan-Yi Jien