Abstract: A modified film-forming resin containing an acid inhibitor is formed by polymerizing a film-forming resin monomer and an acid inhibitor monomer. The modified film-forming resin includes film-forming functional groups and acid inhibitor functional groups, so that the modified film-forming resin can be used as a matrix resin, and has an acid inhibition effect: wherein n in the general formula (I) is 5-200. A preparation method for the modified film-forming resin and a photoresist composition of the modified film-forming resin are also provided. When the modified film-forming resin is applied to the photoresist composition, components of the photoresist composition are uniformly dispersed, so that stable photolithography performance of a photoresist can be ensured, resolution and line width roughness of the photoresist are effectively ensured and improved, and film-forming ability is good, thereby effectively avoiding undesirable phenomena such as embrittlement and peeling of a photoresist film.

Abstract: The preparation method for the diester structure monomer includes the following steps: dissolving glycolate in a reaction solvent to prepare a glycolate solution; mixing the glycolate solution with triethylamine in a protective atmosphere, and cooling to form a mixture; and keeping the protective atmosphere unchanged, and adding the methacryloyl chloride to the mixture for esterification to generate a diester structure monomer. The diester structure monomer generated by the preparation method for the diester structure monomer has a long diester side chain and a group with a small volume and high acid sensitivity. As a result, a resin synthesized from the diester structure monomer has good adhesive force and film-forming property, high deprotection efficiency and plasticity, and the hardness and brittleness of the resin are improved. Moreover, the prepared diester acid protected structure monomer has the advantages of high yield, low by-product content and easy separation and purification.