Abstract: The electron beam exposure system according to this invention has a mask with a pattern cut therein that comprises a plurality of sub-patterns that make up an exposed pattern to be formed on the substrate, a first deflecting means for having electron beams sequentially select sub-patterns in the mask, and a second deflecting means that, in synchronism with said first deflecting means, combines the sub-patterns in said mask irradiated with said electron beams to thereby form a complete image of said exposed pattern on said substrate. The system of this invention further comprises a third deflecting means which uses electron beams having a cross section adequately smaller than each sub-pattern in the mask and which has such electron beams scan the selected sub-patterns in the mask, and a fourth deflecting means for arraying and exposing a plurality of complete images of said exposed pattern on said substrate.