Patents Assigned to Nippon Chemical Industrial Co., Ltd.
  • POWDERY THREE-DIMENSIONALLY CROSSLINKED CLATHRATE PARTICLE, PROCESS OF PRODUCING SAME, DISPERSION, AND RESIN COMPOSITION
    Publication number: 20090036599
    Abstract: A material enabling uniformly dispersing an ionic liquid or a phosphonium salt in various solvents or resin materials is provided. The material is powdery particles of a three-dimensionally crosslinked clathrate obtained by a process including a first-order polymerization step in which a fluoroalkanoyl peroxide compound, a monofunctional monomer, and a polyfunctional monomer having an olefinic double bond and an isocyanate group are reacted to one another to obtain a fluoroalkyl-containing cooligomer and a crosslinking step including the substeps of mixing the fluoroalkyl-containing cooligomer and an ionic liquid or a phosphonium salt and causing the cooligomer to react with itself at the isocyanate groups thereof in the presence of the ionic liquid or the phosphonium salt to obtain powdery three-dimensionally crosslinked clathrate particles.
    Type: Application
    Filed: March 16, 2007
    Publication date: February 5, 2009
    Applicants: NIPPON CHEMICAL INDUSTRIAL CO., LTD., NATIONAL UNIVERSITY CORPORATION HIROSAKI UNIVERSITY
    Inventors: Hideo Sawada, Masashi Sugiya, Ryo Ebara
  • METHOD FOR MANUFACTURING LITHIUM-IRON-PHOSPHORUS COMPOUND OXIDE CARBON COMPLEX AND METHOD FOR MANUFACTURING COPRECIPITATE CONTAINING LITHIUM, IRON, AND PHOSPHORUS
    Publication number: 20090028771
    Abstract: A method for manufacturing a lithium-iron-phosphorus compound oxide carbon complex includes the steps of adding a solution containing lithium ions (Solution B) to a solution containing phosphate ions (Solution C) while a solution containing divalent iron ions (Solution A) is added to Solution C so as to produce a coprecipitate containing lithium, iron, and phosphorus in a first step, mixing the coprecipitate and an electrically conductive carbon material so as to produce a raw material mixture for calcining in a second step, and calcining the raw material mixture for calcining in an inert gas atmosphere so as to produce the lithium-iron-phosphorus compound oxide carbon complex in a third step.
    Type: Application
    Filed: July 24, 2008
    Publication date: January 29, 2009
    Applicant: NIPPON CHEMICAL INDUSTRIAL CO., LTD.
    Inventors: Yasuhiro NAKAOKA, Tadayoshi YANAGIHARA
  • METHOD FOR MANUFACTURING LITHIUM-IRON-PHOSPHORUS COMPOUND OXIDE CARBON COMPLEX AND METHOD FOR MANUFACTURING COPRECIPITATE CONTAINING LITHIUM, IRON, AND PHOSPHORUS
    Publication number: 20090028772
    Abstract: A method for manufacturing a lithium-iron-phosphorus compound oxide carbon complex includes the steps of allowing a solution containing lithium ions, divalent iron ions, and phosphate ions (Solution A) to contact with a solution containing an alkali (Solution B) while pH is controlled at 5.5 to 9.5 so as to produce a coprecipitate containing lithium, iron, and phosphorus in a first step, mixing the coprecipitate and an electrically conductive carbon material so as to produce a raw material mixture for calcining in a second step, and calcining the raw material mixture for calcining in an inert gas atmosphere so as to produce the lithium-iron-phosphorus compound oxide carbon complex in a third step.
    Type: Application
    Filed: July 25, 2008
    Publication date: January 29, 2009
    Applicant: NIPPON CHEMICAL INDUSTRIAL CO., LTD.
    Inventors: Yasuhiro NAKAOKA, Tadayoshi YANAGIHARA
  • PROCESS OF PREPARING OPTICALLY ACTIVE B-HYDROXYCARBOXYLIC ACID DERIVATIVE
    Publication number: 20090030231
    Abstract: Disclosed is a process of preparing an optically active ?-hydroxycarboxylic acid derivative comprising asymmetrically hydrogenating a ?-keto compound in the presence of a catalyst comprising a transition metal complex compound having a 2,3-bis(dialkylphosphino)pyrazine derivative as a ligand. The pyrazine derivative is preferably a quinoxaline derivative, and the transition metal is preferably ruthenium. Preferred examples of the quinoxaline derivative are (S,S)-2,3-bis(tert-butylmethylphosphino)quinoxaline, (R,R)-bis(tert-butylmethylphosphino)quinoxaline, (S,S)-bis(tert-adamantylmethylphosphino)quinoxaline, and (R,R)-bis(adamantylmethylphosphino)quinoxaline.
    Type: Application
    Filed: July 24, 2008
    Publication date: January 29, 2009
    Applicants: NATIONAL UNIVERSITY CORPORATION CHIBA UNIVERSITY, NIPPON CHEMICAL INDUSTRIAL CO., LTD.
    Inventors: Tsuneo IMAMOTO, Kazuhiro YOSHIDA, Miwako NISHIMURA, Aya KOIDE
  • PROCESS OF PREPARING OPTICALLY ACTIVE ALLYL COMPOUND
    Publication number: 20090030200
    Abstract: Disclosed is a process of preparing an optically active allyl compound comprising asymmetrically coupling an allyl compound with an organic nucleophilic compound in the presence of a catalyst. The catalyst is preferably a transition metal complex compound having a phosphine ligand. The phosphine ligand is preferably a 2,3-bis(dialkylphosphino)pyrazine derivative. The pyrazine derivative is preferably a quinoxaline derivative. The transition metal is preferably palladium.
    Type: Application
    Filed: July 24, 2008
    Publication date: January 29, 2009
    Applicants: NATIONAL UNIVERSITY CORPORATION CHIBA UNIVERSITY, NIPPON CHEMICAL INDUSTRIAL CO., LTD.
    Inventors: Tsuneo IMAMOTO, Kazuhiro YOSHIDA, Miwako NISHIMURA, Aya KOIDE
  • Benzene derivative having long, linear conjugated structure, process for producing benzene derivative, and charge-transport material
    Patent number: 7482494
    Abstract: The present invention provides a benzene derivative having a long, linear conjugated structure, the benzene derivative being capable of exhibiting a satisfactory ability to transport charge without photoexcitation, a process for producing the benzene derivative, and a liquid-crystal material and a charge-transport material containing the benzene derivative having a long, linear conjugated structure. That is, a benzene derivative having a long, linear conjugated structure represented by general formula (1): (wherein R1 represents a methyl group or a hydrogen atom, A represents an alkylene group, —CO—O—(CH2)n—, —C6H4—CH2—, or —CO—).
    Type: Grant
    Filed: March 22, 2004
    Date of Patent: January 27, 2009
    Assignee: Nippon Chemical Industrial Co., Ltd.
    Inventor: Yuichiro Haramoto
  • High purity phosphoric acid and process of producing the same
    Patent number: 7470414
    Abstract: High purity phosphoric acid having an Sb content of 200 ppb or less and a sulfide ion content of 200 ppb or less as impurity contents on a 85 weight percent H3PO4 basis. The high purity phosphoric acid is useful as an etching solution for semiconductor devices having a silicon nitride film, an etching solution for liquid crystal display panels having an alumina film, a metallic aluminum etching solution, an alumina etching solution for ceramics, a raw material of phosphate glass for optical fiber, a food additive, and so forth. A metallic material having low capability of forming a lithium compound penetrates through the whole thickness of the active material layer 5.
    Type: Grant
    Filed: June 28, 2004
    Date of Patent: December 30, 2008
    Assignee: Nippon Chemical Industrial Co., Ltd.
    Inventors: Kenichi Ishikawa, Keizou Yokoi, Kosuke Takeuchi, Yutaka Kurita, Heiji Uchiyama
  • Polishing composition for semiconductor wafer and polishing method
    Publication number: 20080311750
    Abstract: The present invention relates to a polishing composition for a semiconductor wafer which is excellent in polishing property, and a polishing method. The polishing composition for a semiconductor wafer comprises colloidal silica consisting of non-spherical silica particles having a ratio of long axis to short axis of 1.5 to 15. The polishing method for a semiconductor wafer uses the polishing composition. The polishing composition can provide a remarkably high polishing rate compared with a polishing composition using spherical colloidal silica, and can provide good mirror-polishing without causing scratches. In addition, small alkali metal content enables reduction of adverse effects on a semiconductor wafer, such as residual abrasives after polishing.
    Type: Application
    Filed: April 22, 2008
    Publication date: December 18, 2008
    Applicants: NIPPON CHEMICAL INDUSTRIAL CO., LTD., SPEEDFAM CO., LTD.
    Inventors: Masahiro Izumi, Shinsuke Miyabe, Kuniaki Maejima, Hiroaki Tanaka
  • MEMORY DEVICE, DATA RECORDING METHOD, AND IC TAG
    Publication number: 20080291346
    Abstract: A memory device includes first electrodes, second electrodes, third electrodes, heaters, and memory cells between the first electrodes and the heaters. Each third electrode is provided on the heaters, and each second electrode is provided at a side portion of the heaters. Each memory cell contains an electroconductive liquid crystal compound having a long linear conjugate structure and exhibiting a smectic phase as a liquid crystal phase. Information can be written in the memory cells by selectively heating the heaters to cause the corresponding memory cells to have both electroconductivity and optical anisotropy.
    Type: Application
    Filed: May 20, 2008
    Publication date: November 27, 2008
    Applicants: YAMANASHI UNIVERSITY, NIPPON CHEMICAL INDUSTRIAL CO., LTD.
    Inventors: Yuichiro HARAMOTO, Takamasa KATO, Kohki HIROSHIMA
  • Polishing composition for semiconductor wafer, method for production thereof and polishing method
    Publication number: 20080287038
    Abstract: The present invention relates to a polishing composition for a substrate including a metal such as wiring, etc., formed on a semiconductor wafer, which can provide a high polishing rate without causing scratches on the wiring metal, a method of producing the polishing composition, and a polishing method. The polishing composition for a semiconductor wafer comprises an acid and an aqueous medium dispersion containing positively-charged silica particles having an amino group-containing silane coupling agent bonded on a surface thereof, the polishing composition having a pH of 2 to 6.
    Type: Application
    Filed: May 14, 2008
    Publication date: November 20, 2008
    Applicants: NIPPON CHEMICAL INDUSTRIAL CO., LTD., SPEEDFAM CO., LTD.
    Inventors: Shinsuke Miyabe, Kuniaki Maejima, Masahiro Izumi, Hiroaki Tanaka
  • Dielectric Ceramic-Forming Composition and Dielectric Ceramic Material
    Publication number: 20080280748
    Abstract: A dielectric ceramic-forming composition capable of being sintered at a temperature lower than that in the known art and to be formed into a dielectric ceramic material having a high dielectric constant; and a dielectric ceramic material obtained from the dielectric ceramic-forming composition are provided. The dielectric ceramic-forming composition includes a perovskite (ABO3) ceramic material powder having an average particle size of 0.01 to 0.5 ?m and a glass powder having an average particle size of 0.1 to 5 ?m, wherein the content of the glass powder is 3 to 12 percent by weight. The perovskite (ABO3) ceramic material powder is preferably a perovskite (ABO3) ceramic material powder prepared by a wet reaction.
    Type: Application
    Filed: March 20, 2006
    Publication date: November 13, 2008
    Applicant: NIPPON CHEMICAL INDUSTRIAL CO., LTD.,
    Inventors: Kyouichi Nishigaki, Shinji Tanabe, Naoaki Narishige
  • MANUFACTURING METHOD OF ORGANOBORON COMPOUND
    Publication number: 20080262257
    Abstract: A manufacturing method for one of, or a mixture of, an optically active allylboron compound and racemic or optically active boryl cyclopropane, including a coupling reaction, in the presence of a catalyst, between allyl compound and diboron compound. It is preferred that a copper (I) complex is used as the catalyst. It is preferred that a counterion of the copper (I) complex is an alkoxide or a hydride. It is preferred that the copper (I) complex has a phosphine ligand. It is preferred that the phosphine ligand is a chiral phosphine ligand.
    Type: Application
    Filed: April 10, 2008
    Publication date: October 23, 2008
    Applicant: NIPPON CHEMICAL INDUSTRIAL CO., LTD
    Inventors: Masaya SAWAMURA, Hajime ITO
  • Composition for polishing semiconductor wafer, and method of producing the same
    Publication number: 20080237535
    Abstract: A composition for polishing a semiconductor wafer contains fumed silica particles that are produced by wet grinding using a grinding medium and that have characteristics (A) to (C): (A) a specific surface area in the range of 50 to 200 m2/g measured by a BET method; (B) an average particle diameter in the range of 10 to 50 nm measured by a laser light-scattering method; and (C) an average ratio A/B of the major axis A to the minor axis B of the fumed silica particles in the range of 1.2 to 2.0 measured by TEM observation, wherein the concentration of silica particles containing the fumed silica particles is in the range of 0.5 to 50 weight percent relative to the total weight of an aqueous dispersion.
    Type: Application
    Filed: March 17, 2008
    Publication date: October 2, 2008
    Applicants: SpeedFam Co., Ltd., Nippon Chemical Industrial Co., Ltd.
    Inventors: Kuniaki Maejima, Masaru Nakajo, Hiroaki Tanaka
  • Novel phosphonium salt ionic liquid and reaction solvent including the same
    Publication number: 20080221353
    Abstract: The present invention provides an ionic liquid including a quaternary phosphonium salt represented by general formula (1): wherein R1, R2, R3, and R4 each represent a linear alkyl group having 1 to 6 carbon atoms, a branched alkyl group having 3 to 6 carbon atoms, an alicyclic alkyl group having 3 to 6 carbon atoms, or an alkoxyalkyl group represented by —(CH2)nO—R5 (wherein n is an integer of 1 to 6; and R5 represents a methyl group or an ethyl group); at least one of R1, R2, R3, and R4 is an alkoxyalkyl group; R1, R2, R3, and R4 may be the same or different; R1 and R2 together may form a ring; and X represents an anion. The present invention also provides a reaction solvent including the ionic liquid.
    Type: Application
    Filed: March 5, 2008
    Publication date: September 11, 2008
    Applicant: Nippon Chemical Industrial Co., Ltd.
    Inventor: Katsuhiko Tsunashima
  • Optically-active bis(alkynylphosphino) ethane-borane derivative and process for producing the same
    Publication number: 20080221362
    Abstract: An optically-active bis(alkynylphosphino)ethane-borane derivative represented by formula (1): wherein R1 and R2, which may be the same or different, each represent an alkyl group, a phenyl group, an alkylsilyl group or a hydrogen atom; R3 represents a branched alkyl group, an alicyclic hydrocarbon group or an aromatic hydrocarbon group; and the asterisk * indicates an optically-active site. The derivative (1) is prepared by bromination of, e.g., an (S)-t-butylmethylphosphine-borane, reaction with an alkynyl lithium, deprotonation, followed by oxidative coupling. Deprotection of the derivative (1) by deboranation gives an optically-active bis(alkynylphosphino)ethane derivative useful as a ligand providing an asymmetric catalyst for catalytic asymmetric synthesis. The asymmetric catalyst having the ligand exhibits high selectivity and catalyst activity.
    Type: Application
    Filed: March 5, 2008
    Publication date: September 11, 2008
    Applicants: Nippon Chemical Industrial Co., Ltd., National University Corporation Chiba University
    Inventors: Tsuneo Imamoto, Kazuhiro Yoshida, Youichi Saitoh, Aya Koide
  • Benzene derivative having long, linear conjugated structure, process for producing benzene derivative, and liquid-crystal material
    Patent number: 7422702
    Abstract: The present invention provides, in a method for transporting charge using the molecular orientation in a liquid-crystalline state, a novel benzene derivative having a long, linear conjugated structure expected to have satisfactory charge-transport properties without photoexcitation, a process for producing the benzene derivative, and a liquid-crystal material including the benzene derivative.
    Type: Grant
    Filed: March 22, 2004
    Date of Patent: September 9, 2008
    Assignee: Nippon Chemical Industrial Co., Ltd.
    Inventor: Yuichiro Haramoto
  • Process for producing optically active phosphorus heterocyclic dimer
    Patent number: 7411096
    Abstract: The present invention provides a process for producing an optically active phosphorus heterocyclic dimer including reacting, in the presence of a base, primary phosphine represented by formula (1) R—PH2 ??(1) is reacted with a compound represented by formula (2) Y—CnH2n—Y ??(2) in the presence of a base; the product is reacted with boron trihydride, oxygen, or sulfur to obtain a phosphorus heterocyclic compound represented by formula (3): the resultant compound is dimerized to produce a phosphorus heterocyclic dimer represented by formula (4): and then oxygen, sulfur, or borane is removed from the resultant phosphorus heterocyclic dimer to obtain an optically active phosphorus heterocyclic dimer represented by formula (5):
    Type: Grant
    Filed: July 27, 2004
    Date of Patent: August 12, 2008
    Assignee: Nippon Chemical Industrial Co., Ltd.
    Inventors: Nobuhiko Oohara, Tsuneo Imamoto
  • Benzene derivative having long, linear conjugated structure, process for producing benzene derivative, and liquid-crystal material
    Patent number: 7390433
    Abstract: The present invention provides, in a method for transporting charge using the molecular orientation in a liquid-crystalline state, a novel benzene derivative having a long, linear conjugated structure expected to have satisfactory charge-transport properties without photoexcitation, a process for producing the benzene derivative, and a liquid-crystal material including the benzene derivative.
    Type: Grant
    Filed: March 22, 2004
    Date of Patent: June 24, 2008
    Assignee: Nippon Chemical Industrial Co., Ltd.
    Inventor: Yuichiro Haramoto
  • Phosphine transition metal complex having ferrocene skeleton, process for making the same, and anti-cancer agent
    Patent number: 7390915
    Abstract: An anti-cancer agent contains a phosphine transition metal complex having a ferrocene skeleton, the complex being represented by general formula (3) below: (wherein R1, R2, R3, and R4 each represent a linear or branched alkyl group, a cycloalkyl group, an alkoxy group, an aryl group, or an aralkyl group; A represents a linear or branched alkyl group, a phenyl group, or a hydrogen atom; M1 represents a transition metal atom selected from the group consisting of gold, copper, platinum, and silver; and X1 represents an anion).
    Type: Grant
    Filed: August 20, 2007
    Date of Patent: June 24, 2008
    Assignee: Nippon Chemical Industrial Co., Ltd
    Inventors: Hiroaki Kodama, Keisuke Ohto, Nobuhiko Oohara, Kazuhiro Nakatsui, Yoshirou Kaneda
  • CATHODE ACTIVE MATERIAL FOR LITHIUM RECHARGEABLE BATTERY, MANUFACTURING METHOD THEREOF AND LITHIUM RECHARGEABLE BATTERY
    Publication number: 20080118428
    Abstract: A method for manufacturing a cathode active material for a lithium rechargeable battery, including: selecting a first metal compound from a group consisting of a halide, a phosphate, a hydrogen phosphate and a sulfate of Mg or Al; selecting a second metal compound from a group consisting of an oxide, a hydroxide and a carbonate of Mg or Al; combining the first metal compound and the second metal compound to obtain a metal compound, the metal compound containing either Mg or Al atoms; mixing a lithium compound, a transition metal compound and the metal compound to obtain a mixture; and sintering the mixture.
    Type: Application
    Filed: November 16, 2007
    Publication date: May 22, 2008
    Applicant: Nippon Chemical Industrial Co., Ltd.
    Inventors: Hidekazu Awano, Minoru Fukuchi, Yuuki Anbe