Patents Assigned to Nippon Silica Glass Co., Ltd.
  • Patent number: 6376401
    Abstract: A synthetic silica glass having a high transmittance for vacuum ultraviolet rays, for example F2 excimer laser beam with a wavelength of 157 nm, a high uniformity and a high durability and useful for ultraviolet ray-transparent optical glass materials is produced from a high-purity silicon compound, for example silicon tetrachloride, by heat treating an accumulated porous silica material at a temperature not high enough to convert the porous silica material to a transparent silica glass in an inert gas atmosphere for a time sufficient to cause the OH groups to be condensed and removed from the glass, and exhibits substantially no content of impurities other than OH group a difference between highest and lowest fictional temperatures of 50° C.
    Type: Grant
    Filed: September 1, 1999
    Date of Patent: April 23, 2002
    Assignees: Tosoh Corporation, Nippon Silica Glass Co., Ltd., Yamaguchi Nippon Silica Glass Co., Ltd.
    Inventors: Shinichi Kondo, Takayuki Nakamura, Kazuhiko Fukuda, Naoyoshi Kamisugi, Nobu Kuzuu, Yoshinao Ihara, Hidetoshi Wakamatsu
  • Patent number: 6312775
    Abstract: An opaque silica glass article comprising a transparent portion and an opaque portion, wherein the opaque portion has an apparent density of 1.70-2.15 g/cm3 and contains 5×104−5×106 bubbles per cm3, said bubbles having an averaged diameter of 10-100 &mgr;m; and the transparent portion has an apparent density of 2.19-2.21 g/cm3 and the amount of bubbles having a diameter of at least 100 &mgr;m in the transparent portion is not more than 1×103 per cm3. The opaque silica glass article is made by a process wherein a mold is charged with a raw material for forming the opaque portion, which is a mixture comprising a silica powder with a small amount of a silicon nitride powder, and a raw material for forming the transparent portion so that the two raw materials are located in the positions corresponding to the opaque and the transparent portions, respectively, of the silica glass article to be produced; and the raw materials are heated in vacuo to be thereby vitrified.
    Type: Grant
    Filed: October 16, 1998
    Date of Patent: November 6, 2001
    Assignees: Tosoh Quartz Corporation, Nippon Silica Glass Co., Ltd.
    Inventors: Hiroya Nagata, Masayuki Kudo, Koji Tsukuma
  • Patent number: 6133178
    Abstract: A high-purity transparent silica glass containing Fe, Na and K impurities each in an amount of 0.01-0.3 ppm, and an OH group in an amount of 0-3 ppm; among the Fe impurities, the content of metallic Fe having a valency of +0 being not larger than 0.1 ppm. This transparent silica glass exhibits, even when it is maintained at 900-1,400.degree. C. for at least 20 hours, an extinction coefficient of not larger than 0.009 at a wavelength of 400 nm, and does not become colored as visually examined. The silica glass is made by a process wherein powdery silica filled in a mold cavity is melted at 1,700.degree. C. or higher, characterized in that the melting is conducted in a graphite mold having a porous high-purity graphite layer provided on the mold inner surface so that the filled silica is not contacted with the mold; said porous layer having a bulk density of 0.1-1.5 g/cm.sup.3, and the content of each of Fe, Na and K impurities in the porous layer being not larger than 1 ppm.
    Type: Grant
    Filed: December 3, 1998
    Date of Patent: October 17, 2000
    Assignees: Tosoh Corporation, Nippon Silica Glass Co., Ltd.
    Inventors: Nobusuke Yamada, Shinkichi Hashimoto, Koji Tsukuma, Tomoyuki Akiyama, Yoshikazu Kikuchi, Hideaki Segawa
  • Patent number: 5665133
    Abstract: Pure transparent quartz glass is provided by molding powdery amorphous silica into an article, converting the molded powdery amorphous silica into crystalline silica of high-temperature type cristobalite structure, and then fusing the crystalline silica, the quartz glass containing impurities respectively at a content of not higher than 1 ppm, and an OH group at a content of not higher than 20 ppm, and having a viscosity of 10.sup.12.0 poise or more at 1200.degree. C. The quartz glass is transparent and has high purity, and is excellent in high temperature viscosity characteristics. The quartz glass can be produced at a low cost.
    Type: Grant
    Filed: October 10, 1995
    Date of Patent: September 9, 1997
    Assignees: Tosoh Corporation, Nippon Silica Glass Co., Ltd.
    Inventors: Koichi Orii, Yukinobu Hara, Tomoyuki Akiyama, Koji Tsukuma, Yoshikazu Kikuchi
  • Patent number: 5585173
    Abstract: The high-purity, opaque quartz glass containing 3.times.10.sup.6 -9.times.10.sup.6 of closed cells having an average size of 20-40 .mu.m per 1 cm.sup.3, a ratio of closed cells having sizes of 100 .mu.m or more to the whole of cells being 1% or less, thereby showing 5% or less of linear transmittance for near infrared rays (.lambda.=900 nm) at a thickness of 1 mm is produced by compacting amorphous silica powder having an average particle size of 0.5-10 .mu.m, in which each of impurities selected from Li, Na, K, Fe, Ti and Al is 1 ppm or less, if any, and sintering the resultant green body at 1730.degree.-1850.degree. C.
    Type: Grant
    Filed: October 7, 1994
    Date of Patent: December 17, 1996
    Assignees: Tosoh Corporation, Nippon Silica Glass Co., Ltd.
    Inventors: Kenji Kamo, Kouichi Ono, Koji Tsukuma, Hiroya Nagata, Emiko Abe, Yoshikazu Kikuchi, Yushiharu Funakoshi
  • Patent number: 5376767
    Abstract: An apparatus for producing fused silica includes at least one anodic plasma arc electrode and at least one cathodic plasma arc electrode adjustably arranged with respect to one another so that the plasma arcs formed thereby couple together to form a plasma arc coupling zone. A feedstock material is fed into a region between the electrodes or to a region near the electrodes where the plasma arc coupling zone is formed. A platform is located beneath the plasma arc coupling zone to receive the silica product which is formed in the plasma arc coupling zone. The platform may be rotated about its axis and move up and down along its axis. A cooling device also may be included with the platform. The plasma anode torch used in the apparatus includes a cylindrical nozzle with a non-consumable, copper, blunt ended electrode disposed therein. A channel is provided between the electrode and the nozzle wall to allow the plasma gas to pass through the torch.
    Type: Grant
    Filed: July 20, 1993
    Date of Patent: December 27, 1994
    Assignees: Tetronics Research & Development Co. Limited, Nippon Silica Glass Co., Ltd.
    Inventors: Charles P. Heanley, John K. Williams, Takumi Fukunishi, Takao Matsuoka
  • Patent number: 5256855
    Abstract: Method for the production of fused silica in which a particulate silica feedstock material is passed from a silica feed tube through or near a plasma arc coupling zone in which at least two plasma arcs of opposite polarity are coupled, thereby raising the temperature of the feedstock material and collecting the material as fused silica.
    Type: Grant
    Filed: March 30, 1992
    Date of Patent: October 26, 1993
    Assignees: Tetronics Research & Development Co. Ltd., Nippon Silica Glass Co., Ltd.
    Inventors: Charles P. Heanley, John K. Williams, Takumi Fukunishi, Takao Matsuoka
  • Patent number: 4937709
    Abstract: A back lighting device for a liquid crystal display has a light scattering coating in the form of dots covering the light emitting surface of a photo-conductive plate. The coating covers 3-50% of the surface nearest an end thereof adjacent a linear light source and covers 80-100% of the surface farthest from the light source. The variation of the coating rate across the surface produces uniform distribution of emitted light from the back lighting device.
    Type: Grant
    Filed: August 14, 1989
    Date of Patent: June 26, 1990
    Assignees: Tosoh Corporation, Nippon Silica Glass Co., Ltd.
    Inventors: Eiichi Yanagi, Takumi Fukunishi, Osamu Shoji, Naoki Yoshida
  • Patent number: 4924357
    Abstract: A light transmitting rod (22) on an end surface of which is disposed a reflecting mirror (26) and on the other end surface of which is mounted a lamp (44) as a light source for emitting light into the light transmitting rod (22) is attached to a base (12), and a diffusion stripe (24) is formed by applying fine powder having a high refractive index to the outer circumferential surface of the light transmitting rod (22) in a rectilinearly pin-striped manner along the axial direction thereof, whereby an even linear light profile of high luminous energy level and having uniform luminous energy as well as no polarization which is also irradiation light having a small light distribution beam angle and being substantially parallel rays can be obtained. As a result, it is possible to provide a light source unit used suitably in business and office machines such as an image scanner, an optical printer, a monochromatic copying machine, a color copying machine, a facsimile machine and the like.
    Type: Grant
    Filed: April 28, 1989
    Date of Patent: May 8, 1990
    Assignees: Japan as represented by Director General of Agency of Industrial Science and Technology, Nippon Silica Glass Co., Ltd., Kondo Sylvania Ltd.
    Inventors: Hiroshi Yamashita, Kanenaga Fujii, Takumi Fukunishi, Masafumi Shigeoka, Hiroshi Sudo