Abstract: A charged beam radiation apparatus includes an auxiliary charged beam emitting mechanism, a main charged beam emitting mechanism, a secondary electron detector, and a computer as a controller. The auxiliary charged beam emitting mechanism emits an auxiliary charged beam of a given acceleration voltage onto a predetermined portion of an electronic device to be measured. The main charged beam emitting mechanism emits a main charged beam of an acceleration voltage lower than that of the auxiliary charged beam onto the predetermined portion and the vicinity of the predetermined portion. The secondary electron detector detects secondary electrons generated from a portion irradiated by the main charged beam. The controller measures a change in a secondary electron signal from the secondary electron detector.

Abstract: A photodetecting device having Josephson junctions, comprises an insulating substrate, a polycrystalline superconductor film formed on the insulating substrate such that Josephson junctions are formed at grain boundaries, the superconductor film having a first region subjected to light illumination, and second and third regions formed contiguously at both sides of the first region such that a width of each of the second and third regions is wider than that of the first region, a bias circuit for supplying a predetermined bias current between the second and third regions, and an output circuit for detecting a change in voltage between the second and third regions, one terminal of said bias circuit and one terminal of said output circuit being commonly grounded, wherein the superconductor film comprises BaPb.sub.1-x Bi.sub.x O.sub.3 (where 0.05.ltoreq.x<0.32) having an I-V characteristic of weak link type under temperature condition less than transition temperature of said BaPb.sub.1-x Bi.sub.x O.sub.3.