Abstract: A thin-film EL display panel which has excellent packageability, high reliability and stable performance characteristics, and which can prevent nonuniformity of brightness and color from occurring and a fabrication method thereof are provided. In the above thin-film EL display panel, two thin-film EL elements 1 and 2 formed by sequentially laminating first electrodes 12 and 22, first insulating layers, luminescent layers, second insulating layers and second electrodes 16 and 26 respectively on glass substrates 11 and 21 are laminated into position and connecting terminal portions 12a, 22a, 16a and 26a for connecting the first electrodes 12 and 22 and second electrodes 16 and 26 are formed on the edge portions of the substrates 11 and 21 of the thin-film EL elements 1 and 2.

Abstract: Disclosed is a method of producing an electroluminescent (EL) device having a CaGa2S4:Ce luminescent layer. The ratio of the X-ray diffraction peak intensity I2 for the (200) reflection of CaS to the X-ray diffraction peak intensity I1 for the (400) reflection of CaGa2S4 as appearing in the X-ray diffraction spectrum for the luminescent layer, I2/I1, is 0.1 or less. The amount of the impurity CaS in the luminescent layer is reduced. The EL device produces blue emission with high purity.

Abstract: An electromagnetic coil which may be employed as an ignition coil for an internal combustion engine is disclosed. The electromagnetic coil includes a lower voltage winding portion and a higher voltage winding portion. The lower voltage winding portion is wound around a spool and includes a plurality of winding layers overlapped with each other and inclined at a given angle to the length of the spool. Each of the winding layers includes a collection of turns made up of a leading portion of wire. The higher voltage winding portion is wound around the spool adjacent the lower voltage winding portion and includes a plurality of winding layers overlapped with each other and inclined at a given angle to the length of the spool. Each of the winding layers includes a collection of turns made up of a trailing portion of the wire.

Abstract: A semiconductor wafer etching method is disclosed that allows etching without use of restricted ozone-destroying solvents such as trichloroethane or fluorocarbons. This method involves forming a protective film of silicon resin or alkali resistant resin on a semiconductor wafer. Then, a surface region of the wafer not covered by the protective film is etched. Finally, the protective film is peeled from the semiconductor wafer without damaging the wafer or employing solvents harmful to the environment.

Abstract: A soldered product having secure reliable joints, without the use of flux, is disclosed. The soldered product includes a first member having a connected portion and a second member, also having a connected portion, facing the first member. The connected portions of the first and second members are electrically connected by a connecting material. A layer of hydrocarbon, including alkane, alkene or alkyne, is disposed around the periphery of the connecting material.

Abstract: A shoe housing 3 is connected to and rotatable together with an input shaft. A vane rotor 9 is connected to an output shaft and accommodated in shoe housing 3 so as to cause a rotation within a predetermined angle with respect to shoe housing 3. Vane rotor 9 and shoe housing 3 cooperatively define hydraulic chambers 10, 11, 12 and 13 whose volumes are variable in accordance with a rotational position of vane rotor 9 with respect to shoe housing 3. A locking member 7 is accommodated in vane rotor 9 and shiftable in a direction parallel to a rotational axis common to shoe housing 3 and vane rotor 9. And, an engaging bore 20, formed on a front plate 4 secured to shoe housing 3, receives locking member 7 through a tapered surface.

Abstract: A metallic member including not more than 0.6% C, 12 to 19% Cr, 6 to 12% Ni, not more than 2% Mn, not more than 2% Mo, not more than 1% Nb and the balance being Fe and inevitable impurities, where Hirayama's equivalent H eq=[Ni %]+1.05 [Mn %]+0.65 [Cr %]+0.35 [Si %]+12.6 [C %] is 20 to 23%; Nickel equivalent Ni eq=[Ni %]+30 [C %]+0.5 [Mn %] is 9 to 12%, and Chromium equivalent Cr eq=[Cr %]+[Mo %]+1.5 [Si %]+0.5 [Nb %] is 16 to 19, wherein % is by weight, is made to have at least one ferromagnetized part having a magnetic flux density B4000 of not less than 0.3T and at least one non-magnetized part having a relative magnetic permeability &mgr; of not more than 1.2 at a temperature of not less than −40° C., as continuously and integrally formed.

Abstract: An airbag of an airbag device has a primary hole for receiving an inflator and a secondary hole for receiving a securing device which secures the inflator to a base plate. A section surrounding the secondary hole is sandwiched between the inflator put in the airbag and the base plate. Therefore, the section of the airbag sandwiched between the inflator and the base plate can be enlarged and thus a high securing strength of the airbag can be acquired. The primary hole can comprise a vent hole that is used to discharge the gas from the inflator to the outside of the airbag. This structure need not make the vent hole separately. Therefore, the airbag is made simple and the production cost thereof becomes lower.

Abstract: A shoe housing 3 is connected to and rotatable together with an input shaft. A vane rotor 9 is connected to an output shaft and accommodated in shoe housing 3 so as to cause a rotation within a predetermined angle with respect to shoe housing 3. Vane rotor 9 and shoe housing 3 cooperatively define hydraulic chambers 10, 11, 12 and 13 whose volumes are variable in accordance with a rotational position of vane rotor 9 with respect to shoe housing 3. A locking member 7 is accommodated in vane rotor 9 and shiftable in a direction parallel to a rotational axis common to shoe housing 3 and vane rotor 9. And, an engaging bore 20, formed on a front plate 4 secured to shoe housing 3, receives locking member 7 through a tapered surface.

Abstract: In an insulated gate type field effect transistor and a manufacturing method of the same, a diffusion region is formed in a semiconductor substrate under an oxidizing atmosphere by thermal diffusion, and a first conductivity type semiconductor layer is formed on the semiconductor substrate by vapor-phase epitaxy after the formation of the diffusion region. Thereafter, the surface of the semiconductor layer is flattened, and a gate insulating film and a gate electrode are formed on the flattened semiconductor layer. Further, a well region as well as a source region are formed in the semiconductor layer to form an insulated gate type field effect transistor. As the surface of the semiconductor layer in which the insulated gate type field effect transistor is formed is flattened, even if the embedded region is formed in the wafer, the gate-source insulation withstand voltage characteristic can be prevented from being deteriorated.

Abstract: Provided are a soldering flux or paste containing an organic substance which has at least two hydroxyl (--OH) groups in a molecule and of which the temperature at which the mass % becomes approximately 0% is not lower than approximately 170.degree. C. and not lower than the solid phase linear temperature of the solder, as measured by thermal gravimetry in which a flow rate of an air or nitrogen (N.sub.2) gas atmosphere is 200 ml/min and a rate of temperature rise is 10.degree. C./min, and a soldering method using the same. The soldering flux or paste of the present invention gives good wettability to a matrix to be bonded in a normal temperature profile and in a non-reductive atmosphere without leaving any residue.

Abstract: The present invention provides a semiconductor physical-quantity sensor which can perform measurement of high accuracy without occurrence of deformation or displacement of a fixed electrode for vibration use even if voltage applied to the fixed electrode for vibration use is changed, and which can increase a dielectric breakdown voltage between the fixed electrode for vibration use and a substrate without varying a thickness of an insulative sacrificial layer or causing sacrificial-layer etching time to be affected. A semiconductor physical-quantity sensor according to the present invention forms an electrode-anchor portion on a sufficiently thick insulation film and causes dielectric breakdown voltage with a semiconductor substrate to be increased. In particular, the sufficiently thick insulation film is given by a LOCOS oxide film formed during sensor detection-circuit fabrication or separation of a diffusion electrode.

Abstract: A p-type silicon carbide semiconductor having a high carrier concentration and activation rate is provided by doping boron as an acceptor impurity in a single crystal silicon carbide. The boron occupies silicon sites in a crystal lattice of the single crystal silicon carbide.

Abstract: A watch-dog type monitoring circuit for a communication device has a counter and a timer. The communication device outputs a communication signal including plural groups of pulse-string signals. The maximum number of pulses in each group of pulse-string signals and the minimum idle time between successive groups of pulse-string signals are previously prescribed by a communications protocol. The counter counts pulses and outputs an abnormal condition signal when a counted number exceeds a predetermined number. The timer inputs the communication signal, measures the idle time between successive groups of pulse-string signals, and resets the counter when the measured idle time exceeds a predetermined amount of time.

Abstract: This invention provides a dynamical quantity sensor having a novel structure, wherein first beams 3, 4, 5, 6 are extended from side walls of a recess 2 of a substrate 1, and an intermediate support member 7 is disposed on the first beams 3, 4, 5, 6. Second beams 8, 9, 10, 11 extending in a direction crossing substantially perpendicularly the first beams 3, 4, 5, 6 are disposed on the intermediate support member 7, and a weight 12 is disposed on the second beams 8, 9, 10, 11. Opposing electrodes 17 and 19 and opposing electrodes 18 and 20 are used as electrodes for excitation, and opposing electrodes 13 and 15 and opposing electrodes 14 and 16 are used as electrodes for detecting an angular velocity. The movement of the weight 12 resulting from the application of the angular velocity is detected.

Abstract: A refrigerant condenser is set so that, if its condensation distance is L, the equivalent diameter of a tube having a linearly configured passage for the purpose of heat exchange is de (each dimension being in units of mm), and the number of times the direction change of the linearly configured passage for the purpose of heat exchange change is N, with de.ltoreq.1.15 and the relationship L=(N+1)W=400+1,180 de to 700+1,180 de satisfied, a high heat exchange efficiency is achieved. In this refrigerant condenser, it is possible to use a single long winding tube.

Abstract: An automobile navigating apparatus capable of setting a detour for a route to a desired destination. A memory device stores link information about links that constitute a map. Based on the link information, a route calculating section sets a route running from a start point to a desired destination by using evaluation values assigned to the links. The route thus set is shown on a display device in a highlighted manner. At the same time, directions to the desired destination along the route are instructed verbally. When a detour switch is operated, a detour for the route is calculated by a detour calculating section. In the detour calculation, the detour calculating section lowers the evaluation value for the link concerned along the previously set route to prevent the same from being set again.

Abstract: A concave channel type DMOS structure having an improved gate-to-source breakdown voltage are disclosed. By establishing a curvature at a corner portion of a lattice-like pattern in a groove portion for forming the concave channel structure, the shape of the tip of a three-dimensionally projecting portion of a semiconductor region determined by a plane angle of the corner portion in the lattice-like pattern and an inclination of the groove portion is rounded. That is, a three-dimensionally sharpened corner portion in the concave channel structure is rounded, and thereby electric field concentration at the corner portion is suppressed.

Abstract: A manufacturing method of a vertical type MOSFET, which can suppress vaporization of impurity from a semiconductor substrate and prevent variation in carrier density of the channel, is disclosed. The vertical type MOSFET is formed by forming a local oxide film to form a concavity on the element surface, removing the local oxide film by wet-etching technique, forming the gate oxide film at the sidewall of the concavity by thermal oxidation, and forming a gate electrode. Further, a polycrystalline silicon is formed on a back surface of the semiconductor substrate before removing the local oxide film. Accordingly, since the polycrystalline silicon is not removed when removing the local oxide film, vaporization of impurity from the semiconductor substrate is suppressed during the thermal oxidation for forming the gate oxide film, thereby preventing change in the carrier density of the channel.

Abstract: To improve the consumption resistance and lifetime, a spark plug for an internal combustion engine comprises: an insulation porcelain having a throughhole; a center electrode held at one end of the throughhole; a housing holding the insulation porcelain; a ground electrode disposed at an front end of the housing and facing the center electrode; a spark gap defined by the center electrode and the ground electrode; and at least one of the center electrode and the ground electrode having a noble metal chip bonded to a discharging spot of an front end thereof, wherein the noble metal chip consisting of an Ir-Rh alloy contains Rh in an amount of from 1 wt % to 60 wt %.