Abstract: A microwave induced plasma decapsulation system and method for decapsulation a packaged semiconductor device applies a microwave induced plasma effluent along with etchant gases electrons, ions and free radicals that are chemically reactive to remove the epoxy molding compound encapsulating the semiconductor device. In one embodiment, the decapsulation system utilizes a microwave generator and a coaxial plasma source. In another embodiment, the decapsulation system utilizes a microwave generator, an electromagnetic surface wave plasma source, and a dielectric plasma discharge tube.

Abstract: An apparatus and a method for selectively etching an encapsulant forming a package of resinous material around an electronic device includes an electronic device package mountable on the etch head; a conductive electrode in electrical contact with package leads of the electronic device package to apply a first voltage to the package leads of the electronic device; a first pump configured to pump a first quantity of the etchant solution from the source into the etch head where the etchant solution is electrically biased to a second voltage different from the first voltage and is cooled to a temperature below the ambient temperature. An etch cavity is formed on an exterior surface of the electronic device package. When the etchant solution has etched through an exterior surface of the electronic device package, the conductive bond wires of the electronic device is prevented from being etched by the applied first voltage.

Abstract: An apparatus and a method for selectively etching an encapsulant forming a package of resinous material around an electronic device includes an electronic device package mountable on the etch head; a conductive electrode in electrical contact with package leads of the electronic device package to apply a first voltage to the package leads of the electronic device; a first pump configured to pump a first quantity of the etchant solution from the source into the etch head where the etchant solution is electrically biased to a second voltage different from the first voltage. An etch cavity is formed on an exterior surface of the electronic device package. When the etchant solution has etched through an exterior surface of the electronic device package, the conductive bond wires of the electronic device is prevented from being etched by the applied first voltage.

Abstract: An apparatus and a method for selectively etching an encapsulant forming a package of resinous material around an electronic device includes an electronic device package mountable on the etch head; a conductive electrode in electrical contact with package leads of the electronic device package to apply a first voltage to the package leads of the electronic device; a first pump configured to pump a first quantity of the etchant solution from the source into the etch head where the etchant solution is electrically biased to a second voltage different from the first voltage. An etch cavity is formed on an exterior surface of the electronic device package. When the etchant solution has etched through an exterior surface of the electronic device package, the conductive bond wires of the electronic device is prevented from being etched by the applied first voltage.

Abstract: A method and apparatus for etching a semiconductor die are disclosed whereby flowing an etchant material across an inactive thereof thins the semiconductor die. In one embodiment, the etchant includes a mixture of nitric acid, hydrofluoric acid, and acetic acid and turbulently flows from one edge of the semiconductor die, across the inactive surface of the semiconductor die, to an opposing edge of the semiconductor die.

Abstract: A vapor generation system includes a supply of liquid; an inert gas stream; an aspirator for aspirating the liquid into the gas stream; a heater for heating the gas stream upstream from the aspirator to a temperature such that aspirated liquid is vaporized in the aspirator to form an inert gas and liquid vaporous mixture; and a mixture outlet for flowing the vaporous mixture against a surface of a workpiece. In a particular application a nitrogen gas stream is heated in a heat exchanger and flows through an aspirator/evaporator to vaporize pumped pulses of hydrofluoric acid in the heated flow stream. The resultant vaporous mixture forms a suitable vaporous etchant for removing silicon dioxide contaminates from a conveyor belt which is employed to convey semiconductor wafers through a chemical vapor deposition processing chamber.

Abstract: An apparatus and method for selectively etching an encapsulant forming a package of resinous material around an electronic device includes a source of etchant solution and an etching assembly including an etch plate and a bell jar or cover, the etch plate and bell jar forming an etching chamber. Optionally, an etch cup or fixture is supported by the etch head or the electronic device package is mountable in the chamber directly on the etch head. A source of pressurized gas such as nitrogen provides a positive pressure about 2 PSI to the bell jar and to flow the etchant solution through the etch head and onto an exterior surface of the electronic device package so that the encapsulant is etched and when break out occurs on a side wall of the package, the pressure in the bell jar is vented to a waste reservoir and the pressure at the etchant solution source is reduced so that etchant solution flow is instantly stopped to prevent any damage to the electronic device by excessive etching.

Abstract: Apparatus for selectively etching a resinous encapsulant wall forming an electronic device package includes etching solution source; an etching assembly including an etch head and orifice for directing etchant solution onto an exterior surface of the package; a cover extending over an etch plate mounting the etch head and forming an etching chamger; a frame on the etch plate and in the chamber for mounting the package such that a package exterior surface is mounted against the etch head, the frame including a sealing gasket between the frame and the etch head and surrounding the orifice; and a ram for pushing and sealing the frame against the etch head peripherally outwardly of and surounding the etch head orifice. In a second embodiment the frame is an etch cup having a well with or without apertures for receiving package leads. In one embodiment the frame mounts a ball grid array package, the frame including a handle perventing contact of heated solder balls.

Abstract: An apparatus and method for selectively etching an encapsulant forming a package of resinous material around an electronic device includes a source of etchant solution and an etching assembly including an etch plate and a movable cover, the etch plate and cover forming an etching chamber. An etch head is supported by the etch plate and the electronic device package is mountable in the chamber on the etch head. In a first mode of operation a displacement pump pumps a first quantity of etchant solution into the etch head and in a second mode of operation the displacement pump agitates at least part of the first quantity of etchant solution repeatedly into and out of an etched cavity formed on an exterior surface of the electronic device package by reaction of the etchant solution with the resinous material. A waste reservoir and a waste outlet extending from the etch head to the reservoir is also provided. The etch head is easily removable from the etch plate by removal of an etch head retainer.