Abstract: An example embodiment includes a large observation device that observes the object using a quantum beam; a reproduction device that is installed in the large observation device and reproduces an input to the object in a state where the object can be observed by the large observation device; a dynamic state observation device that observes a dynamic state of a functional object functioning by a combination of a plurality of elements; a first information acquisition unit that functionally decomposes the functional object up to an element corresponding to the object and acquires first information that is input information to the element corresponding to the object; and a transmission unit that transmits the first information to the reproduction device, in which the reproduction device reproduces the input to the object on the basis of the first information.

Abstract: A semiconductor device includes a base body, a semiconductor chip deposited on a top surface of the base body, an encapsulating resin covering the base body and the semiconductor chip, a ring-shaped plug, and at least one stand-up terminal. The ring-shaped plug has an insulating property, is buried in a part of an upper part of the encapsulating resin while being aligned with respect to the base body, and has a top surface exposed to an outside of the encapsulating resin. The at least one stand-up terminal includes a vertical part penetrating the ring-shaped plug and extending in a direction perpendicular to the top surface of the base body, and has a lower end electrically connected to an electrode of the semiconductor chip inside the encapsulating resin and an upper end exposed to the outside of the encapsulating resin. The ring-shaped plug is fixed and bonded to a circumference of a side surface of the vertical part of the stand-up terminal.

Abstract: A half-bridge power semiconductor module has an insulating wiring substrate including a single insulating plate, and a positive electrode wiring conductor, a bridge wiring conductor, and a negative electrode wiring conductor disposed on or above the insulating plate while being electrically isolated from one another, at least one high side power semiconductor device having a rear surface electrode bonded onto the positive electrode wiring conductor, at least one low side power semiconductor device having a rear surface electrode bonded onto the bridge wiring conductor, a stand-up bridge terminal connected to the bridge wiring conductor, a stand-up high side terminal disposed between the high side power semiconductor device and the bridge terminal, and connected to the positive electrode wiring conductor, and a stand-up low side terminal disposed between the bridge terminal and the low side power semiconductor device, and connected to the negative electrode wiring conductor.

Abstract: A half-bridge power semiconductor module has an insulating wiring substrate including a single insulating plate, and a positive electrode wiring conductor, a bridge wiring conductor, and a negative electrode wiring conductor disposed on or above the insulating plate while being electrically isolated from one another, at least one high side power semiconductor device having a rear surface electrode bonded onto the positive electrode wiring conductor, at least one low side power semiconductor device having a rear surface electrode bonded onto the bridge wiring conductor, a stand-up bridge terminal connected to the bridge wiring conductor, a stand-up high side terminal disposed between the high side power semiconductor device and the bridge terminal, and connected to the positive electrode wiring conductor, and a stand-up low side terminal disposed between the bridge terminal and the low side power semiconductor device, and connected to the negative electrode wiring conductor.

Abstract: A method for observing defect in an amorphous material by transmission electron microscopy is disclosed. The method comprises the steps of: incident electron beam into the amorphous material; eliminating a generated diffraction wave to form an image only by a transmission wave coming through the amorphous material; and observing the image under an under-focus condition. A method for respectively observing an amorphous material and a crystalline material in a composite material containing both of the amorphous material and the crystalline material by transmission electron microscopy is also disclosed.

Abstract: Higher-order structure in the transparent optical polymer molding such as CD, DVD is enabled to be visualized and observed non-destructively and non-contactingly in a wide range of a microscopic level to a macroscopic level by applying light with specific wavelength to the transparent optical polymer molding from an incident optical system, and visualizing light with specific wavelength selected among a reflected wave and/or a transmitted wave of the light applied to the transparent optical polymer molding through an outgoing optical system.