Abstract: The high-voltage circuit breaker with gas insulation is equipped with a device for gas-blast and blowout of the arc generated between the stationary arcing contact and the movable arcing contact when the current is interrupted. Downstream from the blowout nozzle there is located a cooling tube provided with several holes for flow of the gas placed on the outlet path of the hot gas generated by the arc. When the hot gas flows in the cooling tube, the gas pressure difference at the level of the outlet holes causes cool gas to be sucked into the tube and gives rise to a mixture of the hot and cold gases. The gas outlet to the outside of the cooling tube is sufficiently cooled to ensure the dielectric characteristics of the circuit breaker.

Abstract: A method of locating a fault point in a parallel two-circuit transmission line in an n-terminal system. When a single fault occurs at one place in one circuit of the transmission line and when a multiple fault occurs at the same place in the two circuits, a distance to the fault may be calculated by the method of this invention.

Abstract: A method of measuring collimation of an ion beam used for electrostatically-controlled collimated scanning includes the steps of electrically detecting the ion beam to determine the time-dependent change in the scanning position of the ion beam both at an upstream location and at a downstream location of the ion beam, determining upstream and downstream positions of the ion beam at mutually corresponding times based on the time-dependent change determination, and determining the degree of collimation of the ion beam based on the relationship between the upstream and downstream positions.

Abstract: A method of forming a highly insulative silicon oxide thin film including the steps of providing a substrate, depositing silicon on the substrate, and injecting an ion beam of oxygen or a mixed gas consisting of oxygen and an inert gas simultaneously or alternately with the depositing of the silicon. Silicon oxide may be deposited on the substrate in combination with the injection of ions of an inert gas. Other metals made be deposited along with the injection of oxygen or nitrogen cations.

Abstract: An ion implantation apparatus comprises a pair of scanning electrodes for statically scanning an ion beam in an X direction; a drive unit for mechanically scanning a target in a Y direction substantially perpendicular to the X direction; a scanning power supply including a signal generator for generating a signal with a waveform corresponding to waveform data which is input from an outside and an amplifier for amplifying the signal and for outputting it to the pair of scanning electrodes; a multiple point monitor containing a large number of Faraday cups with same area disposed in the X direction for receiving the ion beam and for measuring the beam current; a monitor drive unit for moving the multiple point monitor to and from a radiation area of the scanned ion beam; and a control unit for obtaining the distribution of the beam current sum being entered into each Faraday cup according to the beam current measured by each Faraday cup of the multiple point monitor, for generating the waveform data so that the

Abstract: In an ion implantation apparatus comprising scanning electrodes for electrically scanning an ion beam in an X direction, a scanning power supply for supplying a scanning power to the scanning electrodes, a drive unit for mechanically scanning a target in a Y direction substantially perpendicular to the X direction, a beam current measurement device disposed at one end section of the scanning area of the ion beam for measuring a beam current of the ion beam, and a control unit for computing the scanning speed of the target based on the beam current measured by the beam current measurement device and for controlling the drive unit so that the target is driven at the computed speed, the control unit outputs a trigger signal whenever the computation process of the scanning speed of the target is completed, and the scanning power supply outputs the scanning power for one reciprocative scanning operation of the ion beam at every time the scanning power supply receives the trigger signal from the control unit.

Abstract: An ion implantation apparatus comprises: an implantation chamber into which an ion beam is entered, the ion beam being scanned in an X direction; a holder for holding a wafer in the implantation chamber; and a holder drive unit for mechanically scanning the holder in a Y direction substantially perpendicular to the X direction in the implantation chamber. The holder drive unit swingingly rotates the holder so that the wafer is mechanically scanned in the Y direction.

Abstract: In a package comprising a chip mounting base and a cap to be fitted on the base, the base comprises a metal substrate, an electrically insulating ceramic layer formed on the metal substrate, a patterned metal layer formed on the ceramic layer in a selected area thereof, a first mixed layer formed in an area near the interface between the metal substrate and the ceramic layer, and a second mixed layer formed in an area near the interface between the ceramic layer and the metal layer, and the cap comprises a metal substrate, an electrically insulating ceramic layer formed in at least the marginal portion of the side of the metal substrate which faces the base, and a mixed layer that is formed in an area near the interface between the metal substrate and the cermaic layer.

Abstract: A surface analyzer for analyzing physical properties of the surface of a sample by means of PELS (Proton energy loss spectroscopy) in which accelerated ion beams such as proton beams impinge on the sample in the vertical direction to the surface of the sample and ion beams scattered from the sample are decelerated and then detected by an analyzer to analyze the energy loss of the ion beams. The surface analyzer comprises an ion beam source for generating ion beams, deflecting means for deflecting the ion beams from the ion beam source, irradiating the surface of the sample with the ion beams from the ion beam source in the vertical direction to the surface of the sample, and deflecting scattered ion beams from the sample, accelerating and decelerating means for accelerating the ion beams before the ion beams impinge on the sample and decelerating the scattered ion beams, and analyzing means for detecting the scattered beams and analyzing energy loss of the ion beams.