Patents Assigned to Nissin Electric Company, Ltd.
  • Patent number: 5132544
    Abstract: System for irradiating the surface of a substrate with atomic or molecular ions by rapid scanning of a beam in two dimensions over the surface of the substrate. A scanning system is shown for deflecting the beam in two dimensions relative to a reference axis and a magnetic ion beam transport system following the scanning system is arranged to receive the beam from the scanning system over the range of two dimensional deflections of the scanning system and constructed to impose magnetic field conditions along the beam path of characteristics selected to reorient the two-dimensionally deflected beam to a direction having a predetermined desired relationship with the axis in the two dimensions at the desired instantaneous two dimensional displacement of the beam from the axis, to produce the desired scan of the beam over the substrate.
    Type: Grant
    Filed: August 29, 1990
    Date of Patent: July 21, 1992
    Assignee: Nissin Electric Company Ltd.
    Inventor: Hilton F. Glavish
  • Patent number: 4875284
    Abstract: In a package comprising a chip mounting base and a cap to be fitted on the base, the base comprises a metal substrate, an electrically insulating ceramic layer formed on the metal substrate, a patterned metal layer formed on the ceramic layer in a selected area thereof, a first mixed layer formed in an area near the interface between the metal substrate and the ceramic layer, and a second mixed layer formed in an area near the interface between the ceramic layer and the metal layer, and the cap comprises a metal substrate, an electrically insulating ceramic layer formed in at least the marginal portion of the side of the metal substrate which faces the base, and a mixed layer that is formed in an area near the interface between the metal substrate and the ceramic layer.
    Type: Grant
    Filed: March 14, 1988
    Date of Patent: October 24, 1989
    Assignee: Nissin Electric Company, Ltd.
    Inventors: Kiyoshi Ogata, Yasunori Ando, Eiji Kamijo, Noriaki Matsumura
  • Patent number: 4766320
    Abstract: An ion implantation apparatus comprising an ion source, extraction electrode, mass separator, deceleration tube, ion implantation unit, and a suppressor electrode disposed in the deceleration tube in the vicinity of its inlet for suppressing flow of secondary electrons produced in the separator into the deceleration tube. The secondary electrons are inhibited from flowing into the implantation unit along with ions.
    Type: Grant
    Filed: March 4, 1986
    Date of Patent: August 23, 1988
    Assignee: Nissin Electric Company, Ltd.
    Inventors: Masao Naitoh, Tomoji Ogawa