Abstract: A method of forming a coating comprising the steps of dissolving an silsesquioxane (e.g., one that is primarily a cage compound with 8, 10, 12, 14 or related complete cages or with partially condensed cages containing primarily Si(O)4 units in the cage) in a solvent to form an silsesquioxane solution; introducing (e.g., dissolving) an additive in the solution (e.g., the additive being selected from a rare earth compound, an acid, an organic moiety, a precious metal or compound thereof, a transition metal compound, or any combination thereof, or any of their ionic constituents); and optionally mixing a diluent with the solution to form a coating that is applied to a substrate, wherein the resulting coating forms crosslinks between resulting pendant Si(OH)x groups and a substrate surface. The present invention also contemplates coatings and coated articles consistent with the present teachings.
Type:
Grant
Filed:
February 12, 2010
Date of Patent:
September 17, 2013
Assignees:
Mayaterials, Inc., NIST
Inventors:
Richard M. Laine, Christopher L. Soles, David J. Krug, III, Hyun Wook Ro, Vera Nikolova Popova-Gueorguieva
Abstract: The present invention grows nanostructures using a microwave heating-based sublimation-sandwich SiC polytype growth method comprising: creating a sandwich cell by placing a source wafer parallel to a substrate wafer, leaving a small gap between the source wafer and the substrate wafer; placing a microwave heating head around the sandwich cell to selectively heat the source wafer to a source wafer temperature and the substrate wafer to a substrate wafer temperature; creating a temperature gradient between the source wafer temperature and the substrate wafer temperature; sublimating Si- and C-containing species from the source wafer, producing Si- and C-containing vapor species; converting the Si- and C-containing vapor species into liquid metallic alloy nanodroplets by allowing the metalized substrate wafer to absorb the Si- and C-containing vapor species; and growing nanostructures on the substrate wafer once the alloy droplets reach a saturation point for SiC.
Type:
Grant
Filed:
May 11, 2009
Date of Patent:
August 9, 2011
Assignees:
George Mason Intellectual Properties, Inc., NIST
Inventors:
Yonglai Tian, Rao V. Mulpuri, Siddharth G. Sundaresan, Albert V. Davydov
Abstract: A low-loss comb-generating optical cavity including an optical amplifier and a microwave-driven electro-optic modulator crystal, produces a comb of optical frequency sidebands having spectral lines equally spaced around the frequency of an input laser beam incident on the comb-generating cavity. The comb-generating cavity includes an input mirror movable along the beam propagation direction, and a fixed position output mirror located at time synchronous distances of both the input laser wavelength and modulation wavelength. The comb-generating cavity and its microwave driven modulator are in resonance with the input laser beam, and provide iterative or recirculating beam action that transfers the input optical frequency of the laser, sideband by sideband, to remote and precisely known comb frequencies offset from, and centered on, the input laser frequency.
Type:
Grant
Filed:
January 13, 1999
Date of Patent:
March 13, 2001
Assignees:
University Technology Corporation, NIST
Inventors:
John Lewis Hall, Scott Alan Diddams, Long-Sheng Ma, Jun Ye