Patents Assigned to Nitek, Inc.
  • Patent number: 9859457
    Abstract: A template for a semiconductor device is made by providing an AGN substrate, growing a first layer of Group III nitrides on the substrate, depositing a thin metal layer on the first layer, annealing the metal such as gold so that it agglomerates to form a pattern of islands on the first layer; transferring the pattern into the first layer by etching then removing excess metal; and then depositing a second Group III nitride layer on the first layer. The second layer, through lateral overgrowth, coalesces over the gaps in the island pattern leaving a smooth surface with low defect density. A Group III semiconductor device may then be grown on the template, which may then be removed. Chlorine gas may be used for etching the pattern in the first layer and the remaining gold removed with aqua regia.
    Type: Grant
    Filed: May 18, 2015
    Date of Patent: January 2, 2018
    Assignee: Nitek, Inc.
    Inventors: Vinod Adivarahan, Asif Khan, Iftikhar Ahmad, Bin Zhang, Alexander Lunev
  • Patent number: 9142714
    Abstract: An improved process for forming a UV emitting diode is described. The process includes providing a substrate. A super-lattice is formed directly on the substrate at a temperature of at least 800 to no more than 1,300° C. wherein the super-lattice comprises AlxInyGa1-x-yN wherein 0<x?1, 0?y?1 and 0<x+y?1. A first conductive layer with a first type of conductivity is formed on the super-lattice wherein the first conductive layer comprises AlxInyGa1-x-yN wherein 0<x?1, 0?y?1 and 0<x+y?1. A quantum well region is formed on the first conductive layer wherein the quantum well region comprises AlxInyGa1-x-yN wherein 0<x?1, 0?y?1 and 0<x+y?1. A second conductive layer is formed on the quantum well with a second type of conductivity wherein the second conductive layer comprises AlxInyGa1-x-yN wherein 0<x?1, 0?y?1 and 0<x+y?1.
    Type: Grant
    Filed: February 23, 2012
    Date of Patent: September 22, 2015
    Assignee: NITEK, INC.
    Inventors: Vinod Adivarahan, Qhalid Fareed, Asif Khan
  • Patent number: 8698191
    Abstract: Ultraviolet light emitting illuminator, and method for fabricating same, comprises an array of ultraviolet light emitting diodes and a first and second terminal. When an alternating current is applied across the first and second terminals and thus to each of the diodes, the illuminator emits ultraviolet light at a frequency corresponding to that of the alternating current. The illuminator includes a template with ultraviolet light emitting quantum wells, a first buffer layer with a first type of conductivity and a second buffer layer with a second type of conductivity, all deposited preferably over strain-relieving layer. A first and second metal contact are applied to the semiconductor layers having the first and second type of conductivity, respectively, to complete the LED. The emission spectrum ranges from 190 nm to 369 nm. The illuminator may be configured in various materials, geometries, sizes and designs.
    Type: Grant
    Filed: May 20, 2013
    Date of Patent: April 15, 2014
    Assignee: Nitek, Inc.
    Inventors: Asif Khan, Vinod Adivarahan, Qhalid Fareed
  • Patent number: 8686396
    Abstract: An ultra-violet light-emitting device and method for fabricating an ultraviolet light emitting device, 12, (LED or an LD) with an AlInGaN multiple-quantum-well active region, 10, exhibiting stable cw-powers. The device includes a non c-plane template with an ultraviolet light-emitting structure thereon. The template includes a first buffer layer, 321, on a substrate, 100, then a second buffer layer, 421, on the first preferably with a strain-relieving layer, 302, in both buffer layers. Next there is a semiconductor layer having a first type of conductivity, 500, followed by a layer providing a quantum-well region, 600. Another semiconductor layer, 700, having a second type of conductivity is applied next. Two metal contacts, 980 and 990, are applied to this construction, one to the semiconductor layer having the first type of conductivity and the other to the semiconductor layer having the second type of conductivity, to complete the light emitting device.
    Type: Grant
    Filed: May 8, 2008
    Date of Patent: April 1, 2014
    Assignee: Nitek, Inc.
    Inventor: Asif Khan
  • Patent number: 8680551
    Abstract: A vertically conducting LED comprising, in a layered arrangement: a highly thermally conductive submount wherein the highly conductive submount has a thermal conductivity of at least 100 W/m0K; a p-type layer comprising Al1-x-yInyGax N wherein 0?x?1 and 0?y?1; a quantum well layer comprising Al1-x-yInyGaxN wherein 0?x?1 and 0?y?1; an n-type layer comprising Al1-x-yInyGaxN wherein 0?x?1 and 0?y?1; and an n-type contact layer wherein the LED has a peak emission at 200-365 nm.
    Type: Grant
    Filed: March 23, 2011
    Date of Patent: March 25, 2014
    Assignee: Nitek, Inc.
    Inventors: Vinod Adivarahan, Qhalid Fareed, Asif Khan
  • Patent number: 8652958
    Abstract: A vertical geometry light emitting diode with a strain relieved superlattice layer on a substrate comprising doped AlXInYGa1-X-YN. A first doped layer is on the strain relieved superlattice layer AlXInYGa1-X-YN and the first doped layer has a first conductivity. A multilayer quantum well is on the first doped layer comprising alternating layers quantum wells and barrier layers. The multilayer quantum well terminates with a barrier layer on each side thereof. A second doped layer is on the quantum well wherein the second doped layer comprises AlXInYGa1-X-YN and said second doped layer has a different conductivity than said first doped layer. A contact layer is on the third doped layer and the contact layer has a different conductivity than the third doped layer. A metallic contact is in a vertical geometry orientation.
    Type: Grant
    Filed: September 7, 2011
    Date of Patent: February 18, 2014
    Assignee: Nitek, Inc.
    Inventor: Asif Khan
  • Patent number: 8563995
    Abstract: A light emitting device with a template comprising a substrate and a nested superlattice. The superlattice has Al1-x-yInyGaxN wherein 0?x?? and 0?y?1 with x increasing with distance from said substrate. An ultraviolet light-emitting structure on the template has a first layer with a first conductivity comprising Al1-x-yInyGaxN wherein ??x; a light emitting quantum well region above the first layer comprising Al1-x-yInyGaxN wherein ??x?b; and a second layer over the light emitting quantum well with a second conductivity comprising Al1-x-yInyGaxN wherein b?x. The light emitting device also has a first electrical contact in electrical connection with the first layer, a second electrical contact in electrical connection with the second layer; and the device emits ultraviolet light.
    Type: Grant
    Filed: March 27, 2009
    Date of Patent: October 22, 2013
    Assignee: Nitek, Inc.
    Inventors: Asif Khan, Qhalid Fareed
  • Patent number: 8541817
    Abstract: An improved high breakdown voltage semiconductor device and method for manufacturing is provided. The device has a substrate and a AlaGa1-aN layer on the substrate wherein 0.1?a?1.00. A GaN layer is on the AlaGa1-aN layer. An In1-bGabN/GaN channel layer is on the GaN layer wherein 0.1?b?1.00. A AlcIndGa1-c-dN spacer layer is on the In1-bGabN/GaN layer wherein 0.1?c?1.00 and 0.0?d?0.99. A AleIn1-eN nested superlattice barrier layer is on the AlcIndGa1-c-dN spacer layer wherein 0.10?e?0.99. A AlfIngGa1-f-gN leakage suppression layer is on the AleIn1-eN barrier layer wherein 0.1?f?0.99 and 0.1?g?0.99 wherein the leakage suppression layer decreases leakage current and increases breakdown voltage during high voltage operation. A superstructure, preferably with metallic electrodes, is on the AlfIngGa1-f-gN leakage suppression layer.
    Type: Grant
    Filed: November 8, 2010
    Date of Patent: September 24, 2013
    Assignee: Nitek, Inc.
    Inventors: Qhalid Fareed, Vinod Adivarahan, Asif Khan
  • Patent number: 8507941
    Abstract: Ultraviolet light emitting illuminator, and method for fabricating same, comprises an array of ultraviolet light emitting diodes and a first and a second terminal. When an alternating current is applied across the first and second terminals and thus to each of the diodes, the illuminator emits ultraviolet light at a frequency corresponding to that of the alternating current. The illuminator includes a template with ultraviolet light emitting quantum wells, a first buffer layer with a first type of conductivity and a second buffer layer with a second type of conductivity, all deposited preferably over a strain-relieving layer. A first and second metal contact are applied to the semiconductor layers having the first and second type of conductivity, respectively, to complete the LED. The emission spectrum ranges from 190 nm to 369 nm. The illuminator may be configured in various materials, geometries, sizes and designs.
    Type: Grant
    Filed: June 6, 2009
    Date of Patent: August 13, 2013
    Assignee: Nitek, Inc.
    Inventors: Asif Khan, Vinod Adivarahan, Qhalid Fareed
  • Patent number: 8415654
    Abstract: A low resistance light emitting device with an ultraviolet light-emitting structure having a first layer with a first conductivity, a second layer with a second conductivity; and a light emitting quantum well region between the first layer and second layer. A first electrical contact is in electrical connection with the first layer and a second electrical contact is in electrical connection with the second layer. A template serves as a platform for the light-emitting structure. The ultraviolet light-emitting structure has a first layer having a first portion and a second portion of AlXInYGa(1-X-Y)N with an amount of elemental indium, the first portion surface being treated with silicon and indium containing precursor sources, and a second layer. When an electrical potential is applied to the first layer and the second layer the device emits ultraviolet light.
    Type: Grant
    Filed: March 27, 2009
    Date of Patent: April 9, 2013
    Assignee: Nitek, Inc.
    Inventors: Asif Khan, Qhalid Fareed, Vinod Adivarahan
  • Patent number: 8354687
    Abstract: A high efficiency light emitting diode with an ultraviolet light-emitting structure. The structure has a first layer with a first conductivity comprising Al1-x-yInyGaxN wherein 0?x?1 and 0?y?1; a second layer with a second conductivity comprising Al1-x-yInyGaxN wherein 0?x?1 and 0?y?1; and a light emitting quantum well region between said first layer and said second layer comprising Al1-x-yInyGaxN wherein 0?x?1 and 0?y?1. The diode also has a carrier bonded to said first layer and said second layer wherein said carrier has a thermal conductivity of at least 100 W/mK and said carrier is resistive between a bonding location of said first layer and a second bonding location of said second layer.
    Type: Grant
    Filed: July 30, 2009
    Date of Patent: January 15, 2013
    Assignee: Nitek, Inc.
    Inventors: Vinod Adivarahan, Asif Khan, Qhalid Fareed
  • Patent number: 8354663
    Abstract: An ultra-violet light-emitting diode (LED) array, 12, and method for fabricating same with an AlInGaN multiple-quantum-well active region, 500, exhibiting stable cw-powers. The LED includes a template, 10, with an ultraviolet light-emitting array structure on it. The template includes a first buffer layer, 321, then a second buffer layer, 421, on the first preferably with a strain-relieving layer in both buffer layers. Next there is a semiconductor layer having a first type of conductivity, 500, followed by a layer providing a quantum-well region, 600, with an emission spectrum ranging from 190 nm to 369 nm. Another semiconductor layer having a second type of conductivity is applied next, 800. A first metal contact, 980, is a charge spreading layer in electrical contact with the first layer and between the array of LED's. A second contact, 990, is applied to the semiconductor layer having the second type of conductivity, to complete the LED.
    Type: Grant
    Filed: August 13, 2008
    Date of Patent: January 15, 2013
    Assignee: Nitek, Inc.
    Inventors: Vinod Adivarahan, Asif Khan, Rubina Khan
  • Patent number: 8304756
    Abstract: An ultra-violet emitting light-emitting device and method for fabricating an ultraviolet light emitting device (LED) with an AlInGaN multiple-quantum-well active region exhibiting stable cw-powers. The LED includes a template with an ultraviolet light-emitting structure on it. The template includes a first buffer layer on a substrate, then a second buffer layer on the first preferably with a strain-relieving layer in both buffer layers. Next there is a semiconductor layer having a first type of conductivity followed by a layer providing a quantum-well region with an emission spectrum ranging from 190 nm to 369 nm. Another semiconductor layer having a second type of conductivity is applied next. Two metal contacts are applied to this construction, one to the semiconductor layer having the first type of conductivity and the other to the semiconductor layer having the second type of conductivity, to complete the LED.
    Type: Grant
    Filed: October 17, 2007
    Date of Patent: November 6, 2012
    Assignee: Nitek, Inc.
    Inventor: Asif Khan
  • Patent number: 8242484
    Abstract: The invention is a vertical geometry light emitting diode capable of emitting light in the electromagnetic spectrum having a substrate, a lift-off layer, a strain relieved superlattice layer, a first doped layer, a multilayer quantum wells comprising alternating layers quantum wells and barrier layers, a second doped layer, a third doped layer and a metallic contact that is in a vertical geometry orientation. The different layers consist of a compound with the formula AlxlnyGa(1-x-y)N, wherein x is more than 0 and less than or equal to 1, y is from 0 to 1 and x+y is greater than 0 and less than or equal to 1. The barrier layer on each surface of the quantum well has a band gap larger than a quantum well bandgap. The first and second doped layers have different conductivities. The contact layer has a different conductivity than the third doped layer.
    Type: Grant
    Filed: October 17, 2007
    Date of Patent: August 14, 2012
    Assignee: Nitek, Inc.
    Inventor: Asif Khan
  • Patent number: 8222669
    Abstract: A device for forming a Group III-V semiconductor on a substrate. The device has a primary chamber comprising a substrate and a heat source for heating the substrate to a first temperature. A secondary chamber comprises a metal source and a second heat source for heating the secondary chamber to a second temperature. A first source is provided which is capable of providing HCl to the secondary chamber wherein the HCl and the metal form metal chloride. A metal-organic source is provided. A metal chloride source is provided which comprises a metal chloride. At least one of the metal chloride, the metal-organic and the second metal chloride react with the nitrogen containing compound to form a Group III-V semiconductor on the substrate.
    Type: Grant
    Filed: March 27, 2009
    Date of Patent: July 17, 2012
    Assignee: Nitek, Inc.
    Inventors: Asif Khan, Qhalid Fareed
  • Publication number: 20120145994
    Abstract: An improved process for forming a UV emitting diode is described. The process includes providing a substrate. A super-lattice is formed directly on the substrate at a temperature of at least 800 to no more than 1,300° C. wherein the super-lattice comprises AlxInyGa1-x-yN wherein 0<x?1, 0?y?1 and 0<x+y?1. A first conductive layer with a first type of conductivity is formed on the super-lattice wherein the first conductive layer comprises AlxInyGa1-x-yN wherein 0<x?1, 0?y?1 and 0<x+y?1. A quantum well region is formed on the first conductive layer wherein the quantum well region comprises AlxInyGa1-x-yN wherein 0<x?1, 0?y?1 and 0<x+y?1. A second conductive layer is formed on the quantum well with a second type of conductivity wherein the second conductive layer comprises AlxInyGa1-x-yN wherein 0<x?1, 0?y?1 and 0<x+y?1.
    Type: Application
    Filed: February 23, 2012
    Publication date: June 14, 2012
    Applicant: Nitek, Inc
    Inventors: Vinod ADIVARAHAN, Qhalid Fareed, Asif Khan
  • Publication number: 20120034718
    Abstract: A vertical geometry light emitting diode with a strain relieved superlattice layer on a substrate comprising doped AlXInYGa1-X-YN. A first doped layer is on the strain relieved superlattice layer AlXInYGa1-X-YN and the first doped layer has a first conductivity. A multilayer quantum well is on the first doped layer comprising alternating layers quantum wells and barrier layers. The multilayer quantum well terminates with a barrier layer on each side thereof. A second doped layer is on the quantum well wherein the second doped layer comprises AlXInYGa1-X-YN and said second doped layer has a different conductivity than said first doped layer. A contact layer is on the third doped layer and the contact layer has a different conductivity than the third doped layer. A metallic contact is in a vertical geometry orientation.
    Type: Application
    Filed: September 7, 2011
    Publication date: February 9, 2012
    Applicant: Nitek, Inc.
    Inventor: Asif Khan
  • Publication number: 20110127571
    Abstract: A device for forming a Group III-V semiconductor on a substrate. The device has a primary chamber comprising a substrate and a heat source for heating the substrate to a first temperature. A secondary chamber comprises a metal source and a second heat source for heating the secondary chamber to a second temperature. A first source is provided which is capable of providing HCl to the secondary chamber wherein the HCl and the metal form metal chloride. A metal-organic source is provided. A metal chloride source is provided which comprises a metal chloride. At least one of the metal chloride, the metal-organic and the second metal chloride react with the nitrogen containing compound to form a Group III-V semiconductor on the substrate.
    Type: Application
    Filed: March 27, 2009
    Publication date: June 2, 2011
    Applicant: NITEK, INC.
    Inventors: Asif Khan, Qhalid Fareed
  • Publication number: 20110017976
    Abstract: A light emitting device with a template comprising a substrate and a nested superlattice. The superlattice has Al1-x-yInyGaxN wherein 0?x?? and 0?y?1 with x increasing with distance from said substrate. An ultraviolet light-emitting structure on the template has a first layer with a first conductivity comprising Al1-x-yInyGaxN wherein ??x; a light emitting quantum well region above the first layer comprising Al1-x-yInyGaxN wherein ??x?b; and a second layer over the light emitting quantum well with a second conductivity comprising Al1-x-yInyGaxN wherein b?x. The light emitting device also has a first electrical contact in electrical connection with the first layer, a second electrical contact in electrical connection with the second layer; and the device emits ultraviolet light.
    Type: Application
    Filed: March 27, 2009
    Publication date: January 27, 2011
    Applicant: NITEK, INC
    Inventors: Asif Khan, Qhalid Fareed