Patents Assigned to NITTO OPTICAL CO., LTD.
  • Active region containing nanodots (also referred to as “quantum dots”) in mother crystal formed of zinc blende-type (also referred to as “cubic crystal-type”) AlyInxGal-y-xN Crystal (y[[?]][?] 0, x > 0) grown on Si substrate, and light emitting device using the same (LED and LD)
    Patent number: 9755111
    Abstract: A structure of a high luminance LED and a high luminance LD is provided. The present invention provides a light emitting device containing, on a zinc blend-type BP layer formed on an Si substrate, an AlyInxGazN (y?0, x>0) crystal as a mother crystal maintaining the zinc blend-type crystal structure and In dots having an In concentration higher than that of the AlyInxGazN (y?0, x>0) crystal as the mother crystal.
    Type: Grant
    Filed: December 4, 2015
    Date of Patent: September 5, 2017
    Assignees: NITTO OPTICAL CO., LTD., SOLARTES Lab, LTD.
    Inventors: Kazutaka Terashima, Suzuka Nishimura, Muneyuki Hirai
  • Method for producing GaN-based crystal and semiconductor device
    Patent number: 9595632
    Abstract: A method for producing a GaN-based crystal includes forming a Zinc-blend type BP crystal layer on a Si substrate; forming an In-containing layer, on the BP crystal layer, with such a thickness as to keep the Zinc-blend type structure; and forming a Zinc-blend type GaN-based crystal layer on the In-containing layer. The In-containing layer is a metallic In layer having a thickness of 4 atom layers or less, an InGaN layer having a thickness of 2 nm or less, an InAl mixture layer having a thickness of 4 atom layers or less and containing Al at 10% or less, or an AlInGaN layer having a thickness of 2 nm or less and containing Al at 10% or less.
    Type: Grant
    Filed: February 23, 2015
    Date of Patent: March 14, 2017
    Assignees: NITTO OPTICAL CO., LTD., SOLARTES Lab, Ltd.
    Inventors: Kazutaka Terashima, Suzuka Nishimura, Muneyuki Hirai
  • ACTIVE REGION CONTAINING NANODOTS (ALSO REFERRED TO AS "QUANTUM DOTS") IN MOTHER CRYSTAL FORMED OF ZINC BLENDE-TYPE (ALSO REFERRED TO AS "CUBIC CRYSTAL-TYPE") AlyInxGal-y-xN CRYSTAL(Y . 0, X>0) GROWN ON Si SUBSTRATE, AND LIGHTEMITTING DEVICE USING THE SAME (LED AND LD)
    Publication number: 20160087153
    Abstract: A structure of a high luminance LED and a high luminance LD is provided. The present invention provides a light emitting device containing, on a zinc blende-type BP layer formed on an Si substrate, an AlyInxGazN (y?0, x>0) crystal as a mother crystal maintaining the zinc blende-type crystal structure and In dots having an In concentration higher than that of the AlyInxGazN (y?0, x>0) crystal as the mother crystal.
    Type: Application
    Filed: December 4, 2015
    Publication date: March 24, 2016
    Applicants: NITTO OPTICAL CO., LTD., SOLARTES Lab., LTD.
    Inventors: Kazutaka Terashima, Suzuka NISHIMURA, Muneyuki HIRAI
  • METHOD FOR PRODUCING GaN-BASED CRYSTAL AND SEMICONDUCTOR DEVICE
    Publication number: 20150194569
    Abstract: A method for producing a GaN-based crystal includes forming a Zinc-blende type BP crystal layer on a Si substrate; forming an In-containing layer, on the BP crystal layer, with such a thickness as to keep the Zinc-blende type structure; and forming a Zinc-blende type GaN-based crystal layer on the In-containing layer. The In-containing layer is a metallic In layer having a thickness of 4 atom layers or less, an InGaN layer having a thickness of 2 nm or less, an InAl mixture layer having a thickness of 4 atom layers or less and containing Al at 10% or less, or an AlInGaN layer having a thickness of 2 nm or less and containing Al at 10% or less.
    Type: Application
    Filed: February 23, 2015
    Publication date: July 9, 2015
    Applicants: SOLARTES LAB., LTD., NITTO OPTICAL CO., LTD.
    Inventors: Kazutaka TERASHIMA, Suzuka NISHIMURA, Muneyuki HIRAI