Abstract: A method is provided for forming quantum holes of nanometer levels. In an ion beam scanner, ions are projected from an ion gun onto a semiconductor substrate. During the projection, ions are focused into an ion beam whose focal point is controlled to determine the diameter of the ion beam, and the ion beam is accelerated. When being incident upon the semiconductor substrate, the ion beam is deflected so as to form a plurality of quantum holes. Also provided is a semiconductor for use in a light emitting device with quantum dots. Impurities are doped onto a semiconductor substrate to form a P-type semiconductor layer on which an undoped, intrinsic semiconductor is grown to a certain thickness. A plurality of quantum holes are provided for the intrinsic semiconductor layer, followed by filling materials smaller in energy band gap than the intrinsic semiconductor in annealed quantum holes through recrystallization growth. Next, an N-type semiconductor layer is overlaid on the quantum hole layer.