Abstract: A novel thin ribbon of semiconductor has a polycrystalline structure composed more than 50% of grains having a grain size of more than 5 .mu.m, a thickness of 5 to 200 .mu.m, a sufficient flexibility to be windable on a pipe having a diameter of 34 mm, and malleability. The semiconductor is composed of p-type, i-type or n-type semiconductor material, and may be a two-layer composite formed of at least two elements so as to form a p-n type junction. The composition of the semiconductor material consists of pure silicon or silicon with an additional impurity element for improving the properties of the semiconductor, the additional impurity element being selected from the group consisting of hydrogen, phosphorus, sulfur, oxygen, boron, arsenic, tellurium, tin, selenium, aluminum, gallium, indium, chromium, silver, iron and bismuth. A method of manufacturing a thin ribbon of a two-layer composite of semiconductor material is also disclosed.

Abstract: A novel thin ribbon wafer of semiconductor having a polycrystalline structure composed of more than 50% of a grain having a grain size of more than 5 .mu.m, a thickness of 5 to 200 .mu.m, sufficient flexibility to be windable on a pipe having a diameter of 34 mm, malleability, and composed from p-type, i-type or n-type semiconductor material, and the composite clad of at least two elements thereof so as to form a p-n type junction.

Abstract: A method for manufacturing a thin and flexible ribbon wafer of semiconductor material such as germanium, silicon, selenium, tellurium, PbS, InSb, ZnTe, PbSe, InAs, InP, GaSb, PbTe, ZnS, Bi.sub.2 Te.sub.3, and mixtures thereof comprises melting the semiconductor material at a temperature within the range from a melting point thereof to 300.degree. C. above the melting point to form a uniform melt; ejecting under a pressure the melt through a nozzle against a cooling surface of a moving substrate to cool very rapidly a jet flow of the melt at a cooling rate of 1,000.degree. C. to 1,000,000.degree. C./sec to form the ribbon type thin and flexible wafer of fine and compact microscopic structure having a large mechanical strength and an excellent electrical property. It is possible to add to the melt various additives as fluxes or impurities such as B, P, BP, Sb Sn, As, B, P, Sb, In, Al and alloys intermetallic compounds, and conjugates thereof.

Abstract: A method of manufacturing a thin ribbon of magnetic material having a high permeability and excellent flexibility and workability comprising the combination of steps ofmelting a magnetic material consisting of essentially of by weight 4-7% of aluminum, 8-11% of silicon and the remainder substantially iron and inevitable impurities at a temperature of between a melting point and a temperature not exceeding 300.degree. C. from the melting point, and necessary subingredient of less than 7%,ejecting thus obtained melt under a pressure of 0.01-1.5 atm. through a nozzle onto a moving or rotating cooling substrate,cooling super-rapidly the melt on the rotating surface of said cooling substrate at a cooling rate of 10.sup.3 -10.sup.6 .degree. C./sec so as to have a high initial permeability of more than 10.sup.4, a low coercive force of less than 0.

Abstract: A method for manufacturing a thin and flexible ribbon of dielectric material comprisesheating a raw material mainly consisting of dielectric material which can form a crystalline structure in a solid state and of a glass former which is included by 0 to 50 atomic percentages at a temperature above a melting point of the raw material to form a one phase melt;ejecting the melt thus formed through a nozzle against a cooling surface of a rotating disc, drum or belt, the ejection being carried out under a pressure of 0.01 to 1.5 atm. to form a continuous jet flow of the melt; andcooling instantaneously and rapidly the jet flow of the melt while it is in contact with the cooling surface at a cooling rate of 1,000 to 1,000,000.degree. C./sec so as to form a thin and flexible ribbon of the dielectric material which contains the amorphous state more than 50% in an area ratio. The dielectric constant and breakdown voltage of the ribbon thus formed are very high.